Abstract: An electronic device adapted to executing at least one application, includes an access control, wherein a number of authentication means implemented by the access control is settable according to a security level assigned to the application.

Abstract: A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, a photosensitive layer covering the substrate, and color filters, the photosensitive layer being interposed between the substrate and the color filters. The image sensor further includes first and second electrodes on either side of the photosensitive layer and delimiting second photodiodes in the photosensitive layer, the first photodiodes being configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum and the photosensitive layer being configured to absorb the electromagnetic waves of the visible spectrum and to give way to the electromagnetic waves of said first portion of the infrared spectrum.

Abstract: A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate, a stack covering the substrate and including a first photosensitive layer, an electrically-insulating layer, a second photosensitive layer, and color filters. The image sensor further includes electrodes on either side of the first photosensitive layer and delimiting first photodiodes, and electrodes on either side of the second photosensitive layer and delimiting second photodiodes. The first photosensitive layer absorbs the electromagnetic waves of the visible spectrum and of a portion of the infrared spectrum and the second photosensitive layer absorbs the electromagnetic waves of the visible spectrum and gives way to the electromagnetic waves of the portion of the infrared spectrum.

Abstract: A pixel includes a CMOS support and at least two organic photodetectors. A same lens is vertically in line with the organic photodetectors.

Abstract: A pixel includes a CMOS support and at least two organic photodetectors. A same lens is vertically in line with the organic photodetectors.

Abstract: A pixel includes a CMOS support and at least two organic photodetectors. A same lens is vertically in line with the organic photodetectors.

Abstract: A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate, a stack covering the substrate and including a first photosensitive layer, an electrically-insulating layer, a second photosensitive layer, and color filters. The image sensor further includes electrodes on either side of the first photosensitive layer and delimiting first photodiodes, and electrodes on either side of the second photosensitive layer and delimiting second photodiodes. The first photosensitive layer absorbs the electromagnetic waves of the visible spectrum and of a portion of the infrared spectrum and the second photosensitive layer absorbs the electromagnetic waves of the visible spectrum and gives way to the electromagnetic waves of the portion of the infrared spectrum.

Abstract: A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, a photosensitive layer covering the substrate, and color filters, the photosensitive layer being interposed between the substrate and the color filters. The image sensor further includes first and second electrodes on either side of the photosensitive layer and delimiting second photodiodes in the photosensitive layer, the first photodiodes being configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum and the photosensitive layer being configured to absorb the electromagnetic waves of the visible spectrum and to give way to the electromagnetic waves of said first portion of the infrared spectrum.

Abstract: A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, separate photosensitive blocks covering the substrate, and color filters covering the substrate, the image sensor further including first and second electrodes on either side of each photosensitive block and delimiting a second photodiode in each photosensitive block. The first photodiodes are configured to absorb the electromagnetic waves of the visible spectrum and each photosensitive block is configured to absorb the electromagnetic waves of the visible spectrum of a first portion of the infrared spectrum.

Abstract: A method of processing an image including pixels distributed in cells and in blocks is disclosed, the method including the steps of: a) for each cell, generating n first intensity values of gradients having different orientations, each first value being a weighted sum of the values of the pixels of the cell; b) for each cell, determining a main gradient orientation of the cell and a second value representative of the intensity of the gradient in the main orientation; c) for each block, generating a descriptor of n values respectively corresponding, for each of the n gradient orientations, to the sum of the second values of the cells of the block having the gradient orientation considered as the main gradient orientation.

Abstract: A matrix-array sensor comprises a matrix of detection elements arranged in rows and columns and a readout circuit for each column, the elements of one and the same column linked to the corresponding readout circuit via a bus, each element comprising a sensor, a charge integrator configured to accumulate charge generated by the sensor, a comparator configured to generate a trigger signal when a voltage level across the terminals of this comparator reaches a threshold level, and a bus access logic circuit which is configured to receive, as input, the trigger signal and to attempt to transmit, over the bus, an address of the element in the column, wherein the elements of one and the same column have predetermined bus access priority levels, and wherein the bus access logic circuit of each element is configured: to abandon transmission of the address and reset the charge integrator of the detection element if the bus is pre-empted by an element having a higher priority level; to count the number of attempts made

Abstract: A method of processing an image including pixels distributed in cells and in blocks is disclosed, the method including the steps of: a) for each cell, generating n first intensity values of gradients having different orientations, each first value being a weighted sum of the values of the pixels of the cell; b) for each cell, determining a main gradient orientation of the cell and a second value representative of the intensity of the gradient in the main orientation; c) for each block, generating a descriptor of n values respectively corresponding, for each of the n gradient orientations, to the sum of the second values of the cells of the block having the gradient orientation considered as the main gradient orientation.

Abstract: A matrix-array sensor comprises a matrix of detection elements arranged in rows and columns and a readout circuit for each column, the elements of one and the same column linked to the corresponding readout circuit via a bus, each element comprising a sensor, a charge integrator configured to accumulate charge generated by the sensor, a comparator configured to generate a trigger signal when a voltage level across the terminals of this comparator reaches a threshold level, and a bus access logic circuit which is configured to receive, as input, the trigger signal and to attempt to transmit, over the bus, an address of the element in the column, wherein the elements of one and the same column have predetermined bus access priority levels, and wherein the bus access logic circuit of each element is configured: to abandon transmission of the address and reset the charge integrator of the detection element if the bus is pre-empted by an element having a higher priority level; to count the number of attempts made