Patents by Inventor Camillo Bresolin
Camillo Bresolin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9978936Abstract: The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon the application of heat, the titanium may react with the tellurium to a controlled extent to reduce the concentration of tellurium in the chalcogenide film.Type: GrantFiled: October 20, 2014Date of Patent: May 22, 2018Assignee: Micron Technology, Inc.Inventors: Davide Erbetta, Camillo Bresolin, Silvia Rossini
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Publication number: 20170084833Abstract: A method for making an integrated circuit (IC) including embedded phase change memory (PCM) may include forming an array of heating elements above a substrate including processing circuitry thereon, and forming a respective PCM chalcogenide glass layer above each heating element. This may be done by forming a tellurium-rich, germanium-antimony-tellurium (GST) layer above the heating element, and forming a germanium-rich GST layer above the tellurium-rich GST layer. In another embodiment, the method may include forming the PCM glass layers to have a nitrogen concentration doping profile that increase in a direction upward from the heating element.Type: ApplicationFiled: November 30, 2016Publication date: March 23, 2017Inventors: BARBARA ZANDERIGHI, CAMILLO BRESOLIN, VALERIO SPREAFICO
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Publication number: 20160181515Abstract: A method for making an integrated circuit (IC) including embedded phase change memory (PCM) may include forming an array of heating elements above a substrate including processing circuitry thereon, and forming a respective PCM chalcogenide glass layer above each heating element. This may be done by forming a tellurium-rich, germanium-antimony-tellurium (GST) layer above the heating element, and forming a germanium-rich GST layer above the tellurium-rich GST layer. In another embodiment, the method may include forming the PCM glass layers to have a nitrogen concentration doping profile that increase in a direction upward from the heating element.Type: ApplicationFiled: December 18, 2014Publication date: June 23, 2016Inventors: Barbara ZANDERIGHI, Camillo BRESOLIN, Valerio SPREAFICO
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Patent number: 9236566Abstract: Some embodiments include methods of forming memory cells. Programmable material may be formed directly adjacent another material. A dopant implant may be utilized to improve adherence of the programmable material to the other material by inducing bonding of the programmable material to the other material, and/or by scattering the programmable material and the other material across an interface between them. The memory cells may include first electrode material, first ovonic material, second electrode material, second ovonic material and third electrode material. The various electrode materials and ovonic materials may join to one another at boundary bands having ovonic materials embedded in electrode materials and vice versa; and having damage-producing implant species embedded therein. Some embodiments include ovonic material joining dielectric material along a boundary band, with the boundary band having ovonic material embedded in dielectric material and vice versa.Type: GrantFiled: July 14, 2015Date of Patent: January 12, 2016Assignee: Micron Technology, Inc.Inventors: Camillo Bresolin, Valter Soncini, Davide Erbetta
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Publication number: 20150318470Abstract: Some embodiments include methods of forming memory cells. Programmable material may be formed directly adjacent another material. A dopant implant may be utilized to improve adherence of the programmable material to the other material by inducing bonding of the programmable material to the other material, and/or by scattering the programmable material and the other material across an interface between them. The memory cells may include first electrode material, first ovonic material, second electrode material, second ovonic material and third electrode material. The various electrode materials and ovonic materials may join to one another at boundary bands having ovonic materials embedded in electrode materials and vice versa; and having damage-producing implant species embedded therein. Some embodiments include ovonic material joining dielectric material along a boundary band, with the boundary band having ovonic material embedded in dielectric material and vice versa.Type: ApplicationFiled: July 14, 2015Publication date: November 5, 2015Inventors: Camillo Bresolin, Valter Soncini, Davide Erbetta
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Patent number: 9118004Abstract: Some embodiments include methods of forming memory cells. Programmable material may be formed directly adjacent another material. A dopant implant may be utilized to improve adherence of the programmable material to the other material by inducing bonding of the programmable material to the other material, and/or by scattering the programmable material and the other material across an interface between them. The memory cells may include first electrode material, first ovonic material, second electrode material, second ovonic material and third electrode material. The various electrode materials and ovonic materials may join to one another at boundary bands having ovonic materials embedded in electrode materials and vice versa; and having damage-producing implant species embedded therein. Some embodiments include ovonic material joining dielectric material along a boundary band, with the boundary band having ovonic material embedded in dielectric material and vice versa.Type: GrantFiled: April 9, 2014Date of Patent: August 25, 2015Assignee: Micron Technology, Inc.Inventors: Camillo Bresolin, Valter Soncini, Davide Erbetta
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Publication number: 20150034897Abstract: The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon the application of heat, the titanium may react with the tellurium to a controlled extent to reduce the concentration of tellurium in the chalcogenide film.Type: ApplicationFiled: October 20, 2014Publication date: February 5, 2015Inventors: Davide Erbetta, Camillo Bresolin, Silvia Rossini
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Patent number: 8865514Abstract: The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon the application of heat, the titanium may react with the tellurium to a controlled extent to reduce the concentration of tellurium in the chalcogenide film.Type: GrantFiled: November 9, 2010Date of Patent: October 21, 2014Assignee: Micron Technology, Inc.Inventors: Davide Erbetta, Camillo Bresolin, Silvia Rossini
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Patent number: 8828788Abstract: The electrode of a phase change memory may be formed with a mixture of metal and a non-metal, the electrode having less nitrogen atoms than metal atoms. Thus, in some embodiments, at least a portion of the electrode has less nitrogen than would be the case in a metal nitride. The mixture can include metal and nitrogen or metal and silicon, as two examples. Such material may have good adherence to chalcogenide with lower reactivity than may be the case with metal nitrides.Type: GrantFiled: May 11, 2010Date of Patent: September 9, 2014Assignee: Micron Technology, Inc.Inventors: Davide Erbetta, Camillo Bresolin, Andrea Gotti
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Publication number: 20140217351Abstract: Some embodiments include methods of forming memory cells. Programmable material may be formed directly adjacent another material. A dopant implant may be utilized to improve adherence of the programmable material to the other material by inducing bonding of the programmable material to the other material, and/or by scattering the programmable material and the other material across an interface between them. The memory cells may include first electrode material, first ovonic material, second electrode material, second ovonic material and third electrode material. The various electrode materials and ovonic materials may join to one another at boundary bands having ovonic materials embedded in electrode materials and vice versa; and having damage-producing implant species embedded therein. Some embodiments include ovonic material joining dielectric material along a boundary band, with the boundary band having ovonic material embedded in dielectric material and vice versa.Type: ApplicationFiled: April 9, 2014Publication date: August 7, 2014Applicant: Micron Technology, Inc.Inventors: Camillo Bresolin, Valter Soncini, Davide Erbetta
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Patent number: 8728839Abstract: Some embodiments include methods of forming memory cells. Programmable material may be formed directly adjacent another material. A dopant implant may be utilized to improve adherence of the programmable material to the other material by inducing bonding of the programmable material to the other material, and/or by scattering the programmable material and the other material across an interface between them. The memory cells may include first electrode material, first ovonic material, second electrode material, second ovonic material and third electrode material. The various electrode materials and ovonic materials may join to one another at boundary bands having ovonic materials embedded in electrode materials and vice versa; and having damage-producing implant species embedded therein. Some embodiments include ovonic material joining dielectric material along a boundary band, with the boundary band having ovonic material embedded in dielectric material and vice versa.Type: GrantFiled: June 14, 2013Date of Patent: May 20, 2014Assignee: Micron Technology, Inc.Inventors: Camillo Bresolin, Valter Soncini, Davide Erbetta
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Publication number: 20130270504Abstract: Some embodiments include methods of forming memory cells. Programmable material may be formed directly adjacent another material. A dopant implant may be utilized to improve adherence of the programmable material to the other material by inducing bonding of the programmable material to the other material, and/or by scattering the programmable material and the other material across an interface between them. The memory cells may include first electrode material, first ovonic material, second electrode material, second ovonic material and third electrode material. The various electrode materials and ovonic materials may join to one another at boundary bands having ovonic materials embedded in electrode materials and vice versa; and having damage-producing implant species embedded therein. Some embodiments include ovonic material joining dielectric material along a boundary band, with the boundary band having ovonic material embedded in dielectric material and vice versa.Type: ApplicationFiled: June 14, 2013Publication date: October 17, 2013Inventors: Camillo Bresolin, Valter Soncini, Davide Erbetta
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Patent number: 8486743Abstract: Some embodiments include methods of forming memory cells. Programmable material may be formed directly adjacent another material. A dopant implant may be utilized to improve adherence of the programmable material to the other material by inducing bonding of the programmable material to the other material, and/or by scattering the programmable material and the other material across an interface between them. The memory cells may include first electrode material, first ovonic material, second electrode material, second ovonic material and third electrode material. The various electrode materials and ovonic materials may join to one another at boundary bands having ovonic materials embedded in electrode materials and vice versa; and having damage-producing implant species embedded therein. Some embodiments include ovonic material joining dielectric material along a boundary band, with the boundary band having ovonic material embedded in dielectric material and vice versa.Type: GrantFiled: March 23, 2011Date of Patent: July 16, 2013Assignee: Micron Technology, Inc.Inventors: Camillo Bresolin, Valter Soncini, Davide Erbetta
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Publication number: 20120241705Abstract: Some embodiments include methods of forming memory cells. Programmable material may be formed directly adjacent another material. A dopant implant may be utilized to improve adherence of the programmable material to the other material by inducing bonding of the programmable material to the other material, and/or by scattering the programmable material and the other material across an interface between them. The memory cells may include first electrode material, first ovonic material, second electrode material, second ovonic material and third electrode material. The various electrode materials and ovonic materials may join to one another at boundary bands having ovonic materials embedded in electrode materials and vice versa; and having damage-producing implant species embedded therein. Some embodiments include ovonic material joining dielectric material along a boundary band, with the boundary band having ovonic material embedded in dielectric material and vice versa.Type: ApplicationFiled: March 23, 2011Publication date: September 27, 2012Applicant: Micron Technology, Inc.Inventors: Camillo Bresolin, Valter Soncini, Davide Erbetta
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Publication number: 20120112150Abstract: The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon the application of heat, the titanium may react with the tellurium to a controlled extent to reduce the concentration of tellurium in the chalcogenide film.Type: ApplicationFiled: November 9, 2010Publication date: May 10, 2012Inventors: Davide Erbetta, Camillo Bresolin, Silvia Rossini
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Publication number: 20110278531Abstract: The electrode of a phase change memory may be formed with a mixture of metal and a non-metal, the electrode having less nitrogen atoms than metal atoms. Thus, in some embodiments, at least a portion of the electrode has less nitrogen than would be the case in a metal nitride. The mixture can include metal and nitrogen or metal and silicon, as two examples. Such material may have good adherence to chalcogenide with lower reactivity than may be the case with metal nitrides.Type: ApplicationFiled: May 11, 2010Publication date: November 17, 2011Inventors: Davide Erbetta, Camillo Bresolin, Andrea Gotti
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Publication number: 20080057682Abstract: An embodiment of a method for manufacturing an integrated circuit formed on a semiconductor substrate comprising the steps of: forming at least one shielding structure on said semiconductor substrate, forming a protective layer at least on portions of the semiconductor substrate that surround said shielding structure, carrying out a ionic implantation step with a tilt angle with respect to a normal to a plane defined by said semiconductor substrate so that said at least one shielding structure shields first portions of the protective layer, removing second portions of the protective layer that have been subjected to the ionic implant.Type: ApplicationFiled: September 4, 2007Publication date: March 6, 2008Inventors: Camillo Bresolin, Davide Erbetta, Maria Marangon
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Publication number: 20060226352Abstract: An ion-implantation machine has an implantation chamber with a vent inlet; a vacuum pump is connected to the implantation chamber through a vacuum valve. A pipe connects the vent inlet of the implantation chamber to a source of a fluid containing oxygen. The fluid containing oxygen is preferably environmental air. A flow-rate control valve is arranged on the pipe and is activated only after closing the vacuum valve.Type: ApplicationFiled: June 7, 2006Publication date: October 12, 2006Applicant: STMicroelectronics S.r.l.Inventors: Camillo Bresolin, Valter Soncini, Andrea Riva
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Patent number: 7060995Abstract: An ion-implantation machine has an implantation chamber with a vent inlet; a vacuum pump is connected to the implantation chamber through a vacuum valve. A pipe connects the vent inlet of the implantation chamber to a source of a fluid containing oxygen. The fluid containing oxygen is preferably environmental air. A flow-rate control valve is arranged on the pipe and is activated only after closing the vacuum valve.Type: GrantFiled: September 8, 2003Date of Patent: June 13, 2006Assignee: STMicroelectronics S.r.l.Inventors: Camillo Bresolin, Valter Soncini, Andrea Riva
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Publication number: 20040121498Abstract: An ion-implantation machine has an implantation chamber with a vent inlet; a vacuum pump is connected to the implantation chamber through a vacuum valve. A pipe connects the vent inlet of the implantation chamber to a source of a fluid containing oxygen. The fluid containing oxygen is preferably environmental air. A flow-rate control valve is arranged on the pipe and is activated only after closing the vacuum valve.Type: ApplicationFiled: September 8, 2003Publication date: June 24, 2004Applicant: STMicroelectronics S.r.I.Inventors: Camillo Bresolin, Valter Soncini, Andrea Riva