Abstract: A circuit arrangement is provided where the arrangement of a feedback resistor between a first branch and a second branch enables that a voltage is provided at an output terminal in an efficient way, this means with a high settling speed and a low current consumption. The feedback resistor is arranged between a reference node and the output terminal, where the reference node is connected to a current mirror. The circuit arrangement can be employed as a gate driver. Furthermore, a driver block and a method of driving a circuit arrangement are provided.

Abstract: An output driver (1) comprises a driver transistor (MP0) having a gate node (GMP0) to apply a gate control voltage (GCV) and a gate control circuit (30) to control the gate node (GMP0) of the driver transistor (MP0). The output driver (1) is configured to be operable in a first operation mode and a second operation mode, the variable resistance of the current path of the driver transistor (MP0) being lower in the first operation mode than in the second operation mode. The gate control circuit (30) comprises a controllable resistor (RC), the controllable resistor (RC) being disposed between the gate node (GMP0) of the driver transistor (MP0) and an output node (QP) of the output driver (1), and a resistance of the controllable resistor (RC) being dependent on operating the output driver in the first or second operation mode.

Abstract: A high-voltage output driver (1) for a sensor device (100) with reverse current blocking comprises a supply node (SN) to apply a supply voltage (VHV) and an output node (OP) to provide an output signal (OS) of the high-voltage output driver (1). The high-voltage output driver (1) comprises a driver transistor (MP0) being disposed between the supply node (SN) and the output node (OP). The high-voltage output driver (1) further comprises a bulk control circuit (20) to apply a bulk control voltage (Vwell) to a bulk node (BMP0) of the driver transistor (MP0), and a gate control circuit (30) to apply a gate control voltage (GCV) to the gate node (GMP0) of the driver transistor (MP0).

Abstract: An output driver (1) comprises a driver transistor (MP0) having a gate node (GMP0) to apply a gate control voltage (GCV) and a gate control circuit (30) to control the gate node (GMP0) of the driver transistor (MP0). The output driver (1) is configured to be operable in a first operation mode and a second operation mode, the variable resistance of the current path of the driver transistor (MP0) being lower in the first operation mode than in the second operation mode. The gate control circuit (30) comprises a controllable resistor (RC), the controllable resistor (RC) being disposed between the gate node (GMP0) of the driver transistor (MP0) and an output node (QP) of the output driver (1), and a resistance of the controllable resistor (RC) being dependent on operating the output driver in the first or second operation mode.

Abstract: A high-voltage output driver (1) for a sensor device (100) with reverse current blocking comprises a supply node (SN) to apply a supply voltage (VHV) and an output node (OP) to provide an output signal (OS) of the high-voltage output driver (1). The high-voltage output driver (1) comprises a driver transistor (MP0) being disposed between the supply node (SN) and the output node (OP). The high-voltage output driver (1) further comprises a bulk control circuit (20) to apply a bulk control voltage (Vwell) to a bulk node (BMP0) of the driver transistor (MP0), and a gate control circuit (30) to apply a gate control voltage (GCV) to thegate node (GMP0) of the driver transistor (MP0).