Patents by Inventor Cammy Rene Abernathy

Cammy Rene Abernathy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GaN-type enhancement MOSFET using hetero structure
    Patent number: 6914273
    Abstract: A GaN based enhancement mode MOSFET includes a GaN layer and a (Group III)xGa1?xN layer, such as an AlxGa1?xN disposed on the GaN layer. The thickness of the AlxGa1?xN layer is less than 20 nm to provide a negligible sheet carrier concentration in the GaN layer along its interface with AlxGa1?xN. A source and a drain region extend through the AlxGa1?xN layer into the GaN layer, the source and drain region separated by a channel region. A gate dielectric is disposed over the channel region. A gate electrode is disposed on the gate dielectric. The MOSFET formed is a true enhancement MOSFET which is in an off state when the gate is unbiased.
    Type: Grant
    Filed: August 26, 2003
    Date of Patent: July 5, 2005
    Assignee: University of Florida Research Foundation, Inc.
    Inventors: Fan Ren, Cammy Rene Abernathy, Stephen J. Pearton, Yoshihiro Irokawa
  • GaN-type enhancement MOSFET using hetero structure
    Publication number: 20040041169
    Abstract: A GaN based enhancement mode MOSFET includes a GaN layer and a (Group III)xGa1-xN layer, such as an AlxGa1-xN disposed on the GaN layer. The thickness of the AlxGa1-xN layer is less than 20 nm to provide a negligible sheet carrier concentration in the GaN layer along its interface with AlxGa1-xN. A source and a drain region extend through the AlxGa1-xN layer into the GaN layer, the source and drain region separated by a channel region. A gate dielectric is disposed over the channel region. A gate electrode is disposed on the gate dielectric. The MOSFET formed is a true enhancement MOSFET which is in an off state when the gate is unbiased.
    Type: Application
    Filed: August 26, 2003
    Publication date: March 4, 2004
    Inventors: Fan Ren, Cammy Rene Abernathy, Stephen J. Pearton, Yoshihiro Irokawa