Patents by Inventor Can Bayram
Can Bayram has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230238246Abstract: A wafer includes a buried substrate; a layer of silicon (100) disposed on the buried substrate and forming multiple U-shaped grooves, wherein each U-shaped groove comprises a bottom portion and silicon sidewalls (111) at an angle to the buried substrate; a buffer layer disposed within the multiple U-shaped grooves; and multiple gallium nitride (GaN)-based structures having vertical sidewalls disposed within and protruding above the multiple U-shaped grooves, the multiple GaN-based structures each including cubic gallium nitride (c-GaN) formed at merged growth fronts of hexagonal gallium nitride (h-GaN) that extend from the silicon sidewalls (111).Type: ApplicationFiled: January 18, 2023Publication date: July 27, 2023Inventors: Can Bayram, Muhammad Ali Johar
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Publication number: 20230235480Abstract: A wafer includes a buried substrate; a first layer of silicon (100) disposed on the buried substrate that includes silicon sidewalls (111) at an angle to the buried substrate and that form a bottom of each of multiple U-shaped grooves; a second layer of patterned oxide disposed on the silicon (100) that provides vertical sidewalls of each U-shaped groove formed within the first and second layers; a third layer of a buffer covering the first layer and partially covering the second layer partway up the vertical sidewalls; and multiple gallium nitride (GaN)-based structures disposed within the multiple U-shaped grooves, the multiple GaN-based structures each including cubic gallium nitride (c-GaN) formed at merged growth fronts of hexagonal gallium nitride (h-GaN) that extend from the silicon sidewalls (111).Type: ApplicationFiled: January 18, 2023Publication date: July 27, 2023Inventors: Can Bayram, Muhammad Ali Johar
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Patent number: 10957816Abstract: An electronic device includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material. An active layer includes one or more III-nitride layers. A second contact layer is formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack.Type: GrantFiled: February 5, 2013Date of Patent: March 23, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Can Bayram, Jack O. Chu, Christos Dimitrakopoulos, Jeehwan Kim, Hongsik Park, Devendra K. Sadana
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Patent number: 10211328Abstract: A normally-off, heterojunction field effect transistor includes an intrinsic cubic-phase gallium nitride (c-GaN) substrate and an aluminum gallium nitride (AlGaN) capping layer disposed on the intrinsic c-GaN substrate. The AlGaN capping layer includes a first sublayer of intrinsic c-phase AlxGa1-xN disposed on the c-GaN substrate, wherein the first sublayer is of a first thickness; a second sublayer of doped c-phase AlxGa1-xN disposed on the first sublayer, and wherein the second sublayer is of a second thickness and is doped with a dopant. An insulating layer is disposed on the AlGaN capping layer, wherein the insulating layer is of a fourth thickness. A source electrode, a drain electrode, and a gate electrode are positioned adjacent to and on top of the insulating layer, respectively.Type: GrantFiled: September 13, 2017Date of Patent: February 19, 2019Assignee: Board of Trustees of the University of IllinoisInventors: Can Bayram, Ryan William Grady, Kihoon Park
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Publication number: 20180315591Abstract: A hetero-integrated device includes a monocrystalline Si substrate and a trench formed in the substrate to expose a crystal surface at a bottom of the trench. Sidewall dielectric spacers are formed on sidewalls of the trench, and a III-V material layer is formed on the crystal surface at the bottom of the trench and is isolated from the sidewalls of the trench by the sidewall dielectric spacers.Type: ApplicationFiled: June 21, 2018Publication date: November 1, 2018Inventors: Can Bayram, Christopher P. D'Emic, Devendra K. Sadana, Jeehwan Kim
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Patent number: 10056251Abstract: A hetero-integrated device includes a monocrystalline Si substrate and a trench formed in the substrate to expose a crystal surface at a bottom of the trench. Sidewall dielectric spacers are formed on sidewalls of the trench, and a III-V material layer is formed on the crystal surface at the bottom of the trench and is isolated from the sidewalls of the trench by the sidewall dielectric spacers.Type: GrantFiled: December 13, 2016Date of Patent: August 21, 2018Assignee: International Business Machines CorporationInventors: Can Bayram, Christopher P. D'Emic, Devendra K. Sadana, Jeehwan Kim
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Patent number: 10027086Abstract: A device including a non-polarization material includes a number of layers. A first layer of silicon (100) defines a U-shaped groove having a bottom portion (100) and silicon sidewalls (111) at an angle to the bottom portion (100). A second layer of a patterned dielectric on top of the silicon (100) defines vertical sidewalls of the U-shaped groove. A third layer of a buffer covers the first layer and the second layer. A fourth layer of gallium nitride is deposited on the buffer within the U-shaped groove, the fourth layer including cubic gallium nitride (c-GaN) formed at merged growth fronts of hexagonal gallium nitride (h-GaN) that extend from the silicon sidewalls (111), wherein a deposition thickness (h) of the gallium nitride above the first layer of silicon (100) is such that the c-GaN completely covers the h-GaN between the vertical sidewalls.Type: GrantFiled: April 18, 2017Date of Patent: July 17, 2018Assignee: Board of Trustees of the University of IllinoisInventors: Can Bayram, Richard Liu
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Publication number: 20180083133Abstract: A normally-off, heterojunction field effect transistor includes an intrinsic cubic-phase gallium nitride (c-GaN) substrate and an aluminum gallium nitride (AlGaN) capping layer disposed on the intrinsic c-GaN substrate. The AlGaN capping layer includes a first sublayer of intrinsic c-phase AlxGa1-xN disposed on the c-GaN substrate, wherein the first sublayer is of a first thickness; a second sublayer of doped c-phase AlxGa1-xN disposed on the first sublayer, and wherein the second sublayer is of a second thickness and is doped with a dopant. An insulating layer is disposed on the AlGaN capping layer, wherein the insulating layer is of a fourth thickness. A source electrode, a drain electrode, and a gate electrode are positioned adjacent to and on top of the insulating layer, respectively.Type: ApplicationFiled: September 13, 2017Publication date: March 22, 2018Inventors: Can Bayram, Ryan William Grady, Kihoon Park
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Patent number: 9865769Abstract: A method of forming, and corresponding structure, of an LED device where an LED and the contacts for the device are formed on a surface of the substrate, and the substrate is spalled just below the surface of the substrate.Type: GrantFiled: March 23, 2015Date of Patent: January 9, 2018Assignee: International Business Machines CorporationInventors: Can Bayram, Stephen W. Bedell, Ning Li, Devendra K. Sadana, Kuen-Ting Shiu
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Publication number: 20170310076Abstract: A device including a non-polarization material includes a number of layers. A first layer of silicon (100) defines a U-shaped groove having a bottom portion (100) and silicon sidewalls (111) at an angle to the bottom portion (100). A second layer of a patterned dielectric on top of the silicon (100) defines vertical sidewalls of the U-shaped groove. A third layer of a buffer covers the first layer and the second layer. A fourth layer of gallium nitride is deposited on the buffer within the U-shaped groove, the fourth layer including cubic gallium nitride (c-GaN) formed at merged growth fronts of hexagonal gallium nitride (h-GaN) that extend from the silicon sidewalls (111), wherein a deposition thickness (h) of the gallium nitride above the first layer of silicon (100) is such that the c-GaN completely covers the h-GaN between the vertical sidewalls.Type: ApplicationFiled: April 18, 2017Publication date: October 26, 2017Inventors: Can Bayram, Richard Liu
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Patent number: 9660069Abstract: A method of forming a structure that can be used to integrate Si-based devices, i.e., nFETs and pFETs, with Group III nitride-based devices is provided. The method includes providing a substrate containing an nFET device region, a pFET device region and a Group III nitride device region, wherein the substrate includes a topmost silicon layer and a <111> silicon layer located beneath the topmost silicon layer. Next, a trench is formed within the Group III nitride device region to expose a sub-surface of the <111> silicon layer. The trench is then partially filled with a Group III nitride base material, wherein the Group III nitride material base material has a topmost surface that is coplanar with, or below, a topmost surface of the topmost silicon layer.Type: GrantFiled: April 20, 2016Date of Patent: May 23, 2017Assignee: International Business Machines CorporationInventors: Can Bayram, Christopher Peter D'Emic, William J. Gallagher, Effendi Leobandung, Devendra K. Sadana
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Publication number: 20170092483Abstract: A hetero-integrated device includes a monocrystalline Si substrate and a trench formed in the substrate to expose a crystal surface at a bottom of the trench. Sidewall dielectric spacers are formed on sidewalls of the trench, and a III-V material layer is formed on the crystal surface at the bottom of the trench and is isolated from the sidewalls of the trench by the sidewall dielectric spacers.Type: ApplicationFiled: December 13, 2016Publication date: March 30, 2017Inventors: Can Bayram, Christopher P. D'Emic, Devendra K. Sadana, Jeehwan Kim
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Patent number: 9608160Abstract: After forming patterned dielectric material structures over a (100) silicon substrate, portions of the silicon substrate that are not covered by the patterned dielectric material structures are removed to provide a plurality of openings within the silicon substrate. Each opening exposes a surface of the silicon substrate having a (111) crystalline plane. A buffer layer is then formed on the exposed surfaces of the patterned dielectric material structures and the silicon substrate. A dual phase Group III nitride structure including a cubic phase region is formed filling a space between each neighboring pair of the patterned dielectric material structures and one of the openings located beneath the space. Finally, at least one Group III nitride layer is epitaxially deposited over the cubic phase region of the dual phase Group III nitride structure.Type: GrantFiled: February 5, 2016Date of Patent: March 28, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Can Bayram, Cheng-Wei Cheng, Tayfun Gokmen, Ning Li, John A. Ott, Devendra K. Sadana, Kuen-Ting Shiu
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Patent number: 9601583Abstract: A hetero-integrated device includes a monocrystalline Si substrate and a trench formed in the substrate to expose a crystal surface at a bottom of the trench. Sidewall dielectric spacers are formed on sidewalls of the trench, and a III-V material layer is formed on the crystal surface at the bottom of the trench and is isolated from the sidewalls of the trench by the sidewall dielectric spacers.Type: GrantFiled: July 10, 2015Date of Patent: March 21, 2017Assignee: ARMONK BUSINESS MACHINES CORPORATIONInventors: Can Bayram, Christopher P. D'Emic, Jeehwan Kim, Devendra K. Sadana
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Patent number: 9574287Abstract: A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate.Type: GrantFiled: September 26, 2013Date of Patent: February 21, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: Can Bayram, Christos D. Dimitrakopoulos, Keith E. Fogel, Jeehwan Kim, John A. Ott, Devendra K. Sadana
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Patent number: 9564526Abstract: A method of forming a structure that can be used to integrate Si-based devices, i.e., nFETs and pFETs, with Group III nitride-based devices is provided. The method includes providing a substrate containing an nFET device region, a pFET device region and a Group III nitride device region, wherein the substrate includes a topmost silicon layer and a <111> silicon layer located beneath the topmost silicon layer. Next, a trench is formed within the Group III nitride device region to expose a sub-surface of the <111> silicon layer. The trench is then partially filled with a Group III nitride base material, wherein the Group III nitride material base material has a topmost surface that is coplanar with, or below, a topmost surface of the topmost silicon layer.Type: GrantFiled: June 6, 2016Date of Patent: February 7, 2017Assignee: International Business Machines CorporationInventors: Can Bayram, Christopher Peter D'Emic, William J. Gallagher, Effendi Leobandung, Devendra K. Sadana
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Publication number: 20160284930Abstract: A method of forming, and corresponding structure, of an LED device where an LED and the contacts for the device are formed on a surface of the substrate, and the substrate is spalled just below the surface of the substrate.Type: ApplicationFiled: March 23, 2015Publication date: September 29, 2016Inventors: Can Bayram, Stephen W. Bedell, Ning Li, Devendra K. Sadana, Kuen-Ting Shiu
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Publication number: 20160284832Abstract: A method of forming a structure that can be used to integrate Si-based devices, i.e., nFETs and pFETs, with Group III nitride-based devices is provided. The method includes providing a substrate containing an nFET device region, a pFET device region and a Group III nitride device region, wherein the substrate includes a topmost silicon layer and a <111> silicon layer located beneath the topmost silicon layer. Next, a trench is formed within the Group III nitride device region to expose a sub-surface of the <111> silicon layer. The trench is then partially filled with a Group III nitride base material, wherein the Group III nitride material base material has a topmost surface that is coplanar with, or below, a topmost surface of the topmost silicon layer.Type: ApplicationFiled: June 6, 2016Publication date: September 29, 2016Inventors: Can Bayram, Christopher Peter D'Emic, William J. Gallagher, Effendi Leobandung, Devendra K. Sadana
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Publication number: 20160233244Abstract: A method of forming a structure that can be used to integrate Si-based devices, i.e., nFETs and pFETs, with Group III nitride-based devices is provided. The method includes providing a substrate containing an nFET device region, a pFET device region and a Group III nitride device region, wherein the substrate includes a topmost silicon layer and a <111> silicon layer located beneath the topmost silicon layer. Next, a trench is formed within the Group III nitride device region to expose a sub-surface of the <111> silicon layer. The trench is then partially filled with a Group III nitride base material, wherein the Group III nitride material base material has a topmost surface that is coplanar with, or below, a topmost surface of the topmost silicon layer.Type: ApplicationFiled: April 20, 2016Publication date: August 11, 2016Inventors: Can Bayram, Christopher Peter D'Emic, William J. Gallagher, Effendi Leobandung, Devendra K. Sadana
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Patent number: 9391144Abstract: A semiconductor structure including a (100) silicon substrate having a plurality openings located within the silicon substrate, wherein each opening exposes a surface of the silicon substrate having a (111) crystal plane. This structure further includes an epitaxial semiconductor material located on an uppermost surface of the (100) silicon substrate, and a gallium nitride material located adjacent to the surface of the silicon substrate having the (111) crystal plane and adjacent a portion of the epitaxial semiconductor material. The structure also includes at least one semiconductor device located upon and within the gallium nitride material and at least one other semiconductor device located upon and within the epitaxial semiconductor material.Type: GrantFiled: May 29, 2015Date of Patent: July 12, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Can Bayram, Cheng-Wei Cheng, Devendra K. Sadana, Kuen-Ting Shiu