Patents by Inventor Can ZOU

Can ZOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12287360
    Abstract: The present invention discloses a GaN HEMT device for irradiation damage detection which comprises a substrate layer, a gallium nitride layer, a barrier layer and a dielectric layer. A p-type gallium nitride layer is provided on the barrier layer. A drain and a source are respectively located at an inner side and an outer side of the p-type gallium nitride layer and provided on the gallium nitride layer. A Schottky metal layer is provided on the p-type gallium nitride layer. A first ohmic metal layer and a second ohmic metal layer are respectively located at an inner side and an outer side of the p-type gallium nitride layer and provided on the barrier layer. The second ohmic metal layer includes inner gear electrodes and outer gear electrodes, which are interdigital with each other.
    Type: Grant
    Filed: December 30, 2024
    Date of Patent: April 29, 2025
    Assignee: NANJING UNIVERSITY
    Inventors: Feng Zhou, Can Zou, Hai Lu, Weizong Xu, Dong Zhou, Fangfang Ren
  • Publication number: 20210057585
    Abstract: A thin film transistor, a manufacturing method for the thin film transistor, and a display device are provided. The thin film transistor includes a substrate, and further includes an oxide semiconductor layer, a gate electrode, a gate insulation layer, a source electrode, and a drain electrode that are disposed on the substrate. The oxide semiconductor layer includes a channel portion, a first contact portion, and a second contact portion, where the source electrode is in contact with the first contact portion, and the drain electrode is in contact with the second contact portion. The channel portion at least partially protrudes in a direction away from the substrate, and the gate insulation layer and the gate electrode are successively stacked on the channel portion.
    Type: Application
    Filed: November 9, 2020
    Publication date: February 25, 2021
    Inventors: Guowen Yan, Can Zou, Wei Cheng Kao
  • Publication number: 20150108065
    Abstract: A method for wastewater treatment in a bioreactor, comprises recycling organic sludge in the bioreactor to supply carbon sources for removing nitrogen and phosphor and increase organic loading of the reactor, and adjusting operational parameters for the bioreactor to form facultative-anaerobic environment or anaerobic environment in the bioreactor. By following the method of the present invention, recycling sludge and simultaneously removing nitrogen and phosphor are completed such that the treatment processes for wastewater disposal are simplified; the sludge is recycled as carbon sources in the bioreactor such that saving resources is realized and the carbon emission into atmosphere is reduced; and zero-amount sludge is discharged such that harm from secondary pollution is avoided.
    Type: Application
    Filed: May 16, 2014
    Publication date: April 23, 2015
    Applicant: Jiangxi JDL Environmental Protection Co., Ltd.
    Inventors: Zhimin LIAO, Kun TAO, Jianzhong XIONG, Rongzhong ZHOU, Kai ZENG, Huaqiong LIU, Can ZOU, Wenxuan LI, Fangfang WANG, Jun XIAO, Jiaojiao HU, Yingying XU, Jinwen XIE, Fan YANG, Kun LI, Jinfeng LIU, Yilin DENG, Zi WANG, Zhenrong XU, Yanlong WANG