Patents by Inventor Cancheepuram Srividya

Cancheepuram Srividya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070252244
    Abstract: The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.
    Type: Application
    Filed: April 28, 2006
    Publication date: November 1, 2007
    Inventors: Cancheepuram Srividya, Noel Rocklein, John Vernon, Jeff Nelson, F. Gealy, David Korn
  • Publication number: 20070075349
    Abstract: The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
    Type: Application
    Filed: October 31, 2006
    Publication date: April 5, 2007
    Inventors: Cancheepuram Srividya, F. Gealy, Thomas Graettinger
  • Publication number: 20070048953
    Abstract: Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.
    Type: Application
    Filed: August 30, 2005
    Publication date: March 1, 2007
    Inventors: Dan Gealy, Vishwanath Bhat, Cancheepuram Srividya, M. Rocklein
  • Publication number: 20050224913
    Abstract: The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.
    Type: Application
    Filed: April 8, 2004
    Publication date: October 13, 2005
    Inventors: Vishwanath Bhat, F. Gealy, Cancheepuram Srividya
  • Publication number: 20050227433
    Abstract: The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.
    Type: Application
    Filed: May 5, 2005
    Publication date: October 13, 2005
    Inventors: Vishwanath Bhat, F. Gealy, Cancheepuram Srividya
  • Publication number: 20050104111
    Abstract: The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
    Type: Application
    Filed: December 17, 2004
    Publication date: May 19, 2005
    Inventors: Cancheepuram Srividya, F. Gealy, Thomas Graettinger