Patents by Inventor Candice Fanny THOMAS

Candice Fanny THOMAS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Durable hybrid heterostructures and methods for manufacturing the same
    Patent number: 11793089
    Abstract: A hybrid heterostructure includes a semiconductor layer comprising indium antimonide, a superconductor layer comprising aluminum, and a screening layer between the semiconductor layer and the superconductor layer, the screening layer comprising indium arsenide. By including a screening layer of indium arsenide between the semiconductor layer of indium antimonide and the superconductor layer of aluminum, a high-performance and durable hybrid heterostructure suitable for use in quantum computing devices is provided.
    Type: Grant
    Filed: September 20, 2019
    Date of Patent: October 17, 2023
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Candice Fanny Thomas, Michael James Manfra
  • Quantum well field-effect transistor and method for manufacturing the same
    Patent number: 11127820
    Abstract: A quantum well field-effect transistor (QWFET) includes a barrier layer, a quantum well layer, and a spacer layer. The quantum well layer is on the barrier layer. The barrier layer and the spacer layer comprise aluminum indium antimonide that is undoped. The quantum well layer comprises indium antimonide. The spacer layer is on the quantum well layer. The quantum well layer and the spacer layer are between a source contact and a drain contact. A gate contact is on a dielectric layer, which is on the spacer layer. By providing the barrier layer and the spacer layer as undoped layers, a performance of the QWFET may be improved.
    Type: Grant
    Filed: September 20, 2019
    Date of Patent: September 21, 2021
    Assignee: MICROSOFT TECHNOLOGY LICENSING, LLC
    Inventors: Michael James Manfra, Candice Fanny Thomas
  • DURABLE HYBRID HETEROSTRUCTURES AND METHODS FOR MANUFACTURING THE SAME
    Publication number: 20210091294
    Abstract: A hybrid heterostructure includes a semiconductor layer comprising indium antimonide, a superconductor layer comprising aluminum, and a screening layer between the semiconductor layer and the superconductor layer, the screening layer comprising indium arsenide. By including a screening layer of indium arsenide between the semiconductor layer of indium antimonide and the superconductor layer of aluminum, a high-performance and durable hybrid heterostructure suitable for use in quantum computing devices is provided.
    Type: Application
    Filed: September 20, 2019
    Publication date: March 25, 2021
    Inventors: Candice Fanny THOMAS, Michael James MANFRA
  • QUANTUM WELL FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20210091185
    Abstract: A quantum well field-effect transistor (QWFET) includes a barrier layer, a quantum well layer, and a spacer layer. The quantum well layer is on the barrier layer. The barrier layer and the spacer layer comprise aluminum indium antimonide that is undoped. The quantum well layer comprises indium antimonide. The spacer layer is on the quantum well layer. The quantum well layer and the spacer layer are between a source contact and a drain contact. A gate contact is on a dielectric layer, which is on the spacer layer. By providing the barrier layer and the spacer layer as undoped layers, a performance of the QWFET may be improved.
    Type: Application
    Filed: September 20, 2019
    Publication date: March 25, 2021
    Inventors: Michael James MANFRA, Candice Fanny THOMAS