Abstract: A three-dimensional memory device includes a substrate and a stack structure including alternating conductive layers and dielectric layers disposed on the substrate, and a memory string structure extending vertically through the stack structure. The memory string structure includes a conductive pillar and a storage layer disposed between the conductive pillar and the stack structure and surrounding the conductive pillar. The storage layer includes a plurality of first protruding portions at interfaces between the conductive layers and the dielectric layers.

Abstract: A method for forming a three-dimensional memory device includes forming a memory stack structure which has alternately stacked conductive layers and dielectric layers on a substrate, performing a trim-etching process to form a staircase structure on the memory stack structure, wherein a sidewall of the conductive layer of each step of the staircase structure is recessed from a sidewall of the dielectric layer over the conductive layer to form a recess that exposes a bottom surface of a step nosing portion of the dielectric layer, and forming a plurality of word line contact plugs which respectively extend through one of the dielectric layers of the staircase structure, wherein at least one of the word line contact plugs has a first bottom surface directly contacting a top surface of one of the conductive layers and a second bottom surface directly contacting a top surface of one of the step nosing portions.

Abstract: A three-dimensional memory device includes a staircase structure comprising steps respectively comprising a conductive layers and a dielectric layer. A sidewall of the conductive layer is recessed from a sidewall of the dielectric layer to form a recess that exposes a portion of a bottom surface of the dielectric layer.

Abstract: A three-dimensional memory device includes a substrate and a stack structure including alternating conductive layers and dielectric layers disposed on the substrate, and a memory string structure extending vertically through the stack structure. The memory string structure includes a conductive pillar and a storage layer disposed between the conductive pillar and the stack structure and surrounding the conductive pillar. The storage layer includes a plurality of first protruding portions at interfaces between the conductive layers and the dielectric layers.

Abstract: A three-dimensional memory device includes a staircase structure comprising steps respectively comprising a conductive layers and a dielectric layer. A sidewall of the conductive layer is recessed from a sidewall of the dielectric layer to form a recess that exposes a portion of a bottom surface of the dielectric layer.