Patents by Inventor Canfeng Lai
Canfeng Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230377855Abstract: Embodiments of the present disclosure generally relate to a substrate processing chamber, and methods for cleaning the substrate processing chamber are provided herein. An electrode cleaning ring is disposed in a lower portion of a process volume (e.g., disposed below a substrate support in the process volume). The electrode cleaning ring is a capacitively coupled plasma source. The electrode cleaning ring propagates plasma into the lower portion of the process volume. RF power is provided to the electrode cleaning ring via an RF power feed-through. The RF plasma propagated by the electrode cleaning ring removes deposition residue in the lower portion of the process volume.Type: ApplicationFiled: May 20, 2022Publication date: November 23, 2023Inventors: Mukesh Shivakumaraiah CHITRADURGA, Luke BONECUTTER, Sathya Swaroop GANTA, Canfeng LAI, Jay D. PINSON, Kaushik Comandoor ALAYAVALLI, Kallol BERA
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Publication number: 20230343552Abstract: Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support. The semiconductor substrate supports may include a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft.Type: ApplicationFiled: June 28, 2023Publication date: October 26, 2023Applicant: Applied Materials, Inc.Inventors: Khokan Chandra Paul, Ravikumar Patil, Vijet Patil, Carlaton Wong, Adam J. Fischbach, Timothy Franklin, Tsutomu Tanaka, Canfeng Lai
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Patent number: 11699571Abstract: Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support. The semiconductor substrate supports may include a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft.Type: GrantFiled: September 8, 2020Date of Patent: July 11, 2023Assignee: Applied Materials, Inc.Inventors: Khokan Chandra Paul, Ravikumar Patil, Vijet Patil, Carlaton Wong, Adam J. Fischbach, Timothy Franklin, Tsutomu Tanaka, Canfeng Lai
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Patent number: 11581408Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.Type: GrantFiled: March 15, 2021Date of Patent: February 14, 2023Assignee: Applied Materials, Inc.Inventors: Matthew Scott Rogers, Roger Curtis, Lara Hawrylchak, Canfeng Lai, Bernard L. Hwang, Jeffrey A. Tobin, Christopher S. Olsen, Malcolm J. Bevan
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Patent number: 11450509Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.Type: GrantFiled: January 6, 2020Date of Patent: September 20, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Canfeng Lai, Jeffrey Tobin, Peter I. Porshnev, Jose Antonio Marin
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Publication number: 20220139679Abstract: A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.Type: ApplicationFiled: November 3, 2020Publication date: May 5, 2022Inventors: Job George KONNOTH JOSEPH, Sathya Swaroop GANTA, Kallol BERA, Andrew NGUYEN, Jay D. PINSON, II, Akshay DHANAKSHIRUR, Kaushik Comandoor ALAYAVALLI, Canfeng LAI, Ren-Guan DUAN, Jennifer Y. SUN, Anil Kumar KALAL, Abhishek PANDEY
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Publication number: 20220122866Abstract: Embodiments of the present disclosure generally relate to semiconductor processing equipment, and more specifically to apparatus, e.g., magnet holding structures, that can be used with magnets during plasma processing of a substrate. In an embodiment, a magnet holding structure for a plasma-enhanced chemical vapor deposition chamber is provided. The magnet holding structure includes a top piece having a plurality of magnet retention members and a bottom piece having a plurality of magnet retention members. The top piece has a first inside edge and a first outside edge, and the bottom piece has a second inside edge and a second outside edge. The magnet holding structure further includes a plurality of casings. Each casing of the plurality of casings is configured to at least partially encapsulate a magnet, and each casing positioned between a magnet retention member of the top piece and a magnet retention member of the bottom piece.Type: ApplicationFiled: October 21, 2020Publication date: April 21, 2022Inventors: Andrew NGUYEN, Sathya Swaroop GANTA, Kallol BERA, Canfeng LAI
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Publication number: 20220076920Abstract: Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support. The semiconductor substrate supports may include a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft.Type: ApplicationFiled: September 8, 2020Publication date: March 10, 2022Applicant: Applied Materials, Inc.Inventors: Khokan Chandra Paul, Ravikumar Patil, Vijet Patil, Carlaton Wong, Adam J. Fischbach, Timothy Franklin, Tsutomu Tanaka, Canfeng Lai
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Publication number: 20220076922Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may be housed in a processing region of a semiconductor processing chamber. The processing region may be defined between a faceplate and a substrate support on which the semiconductor substrate is seated. The methods may include forming a treatment plasma within the processing region of the semiconductor processing chamber. The treatment plasma may be formed at a first power level from a first power source. A second power may be applied to the substrate support from a second power source at a second power level. The methods may include densifying the flowable film within the feature defined within the semiconductor substrate with plasma effluents of the treatment plasma.Type: ApplicationFiled: September 8, 2020Publication date: March 10, 2022Applicant: Applied Materials, Inc.Inventors: Khokan Chandra Paul, Adam J. Fischbach, Tsutomu Tanaka, Canfeng Lai
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Publication number: 20220064797Abstract: A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.Type: ApplicationFiled: August 16, 2021Publication date: March 3, 2022Inventors: Akshay DHANAKSHIRUR, Juan Carlos ROCHA-ALVAREZ, Kaushik Comandoor ALAYAVALLI, Jay D. PINSON, II, Rick KUSTRA, Badri N. RAMAMURTHI, Anup Kumar SINGH, Ganesh BALASUBRAMANIAN, Bhaskar KUMAR, Vinayak Vishwanath HASSAN, Canfeng LAI, Kallol BERA, Sathya Swaroop GANTA
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Publication number: 20210202702Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.Type: ApplicationFiled: March 15, 2021Publication date: July 1, 2021Inventors: Matthew Scott ROGERS, Roger CURTIS, Lara HAWRYLCHAK, Canfeng LAI, Bernard L. HWANG, Jeffrey A. TOBIN, Christopher S. OLSEN, Malcolm J. BEVAN
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Patent number: 10950698Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.Type: GrantFiled: August 13, 2018Date of Patent: March 16, 2021Assignee: Applied Materials, Inc.Inventors: Matthew Scott Rogers, Roger Curtis, Lara Hawrylchak, Canfeng Lai, Bernard L. Hwang, Jeffrey Tobin, Christopher S. Olsen, Malcolm Bevan
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Patent number: 10699878Abstract: A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.Type: GrantFiled: February 9, 2017Date of Patent: June 30, 2020Assignee: LAM RESEARCH CORPORATIONInventors: James Eugene Caron, Ivelin Angelov, Jason Lee Treadwell, Joon Hong Park, Canfeng Lai
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Publication number: 20200144027Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.Type: ApplicationFiled: January 6, 2020Publication date: May 7, 2020Inventors: Canfeng LAI, Jeffrey TOBIN, Peter I. PORSHNEV, Jose Antonio MARIN
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Patent number: 10529541Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.Type: GrantFiled: March 17, 2017Date of Patent: January 7, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Canfeng Lai, Jeffrey Tobin, Peter I. Porshnev, Jose Antonio Marin
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Publication number: 20170330764Abstract: Provided are methods and apparatuses for smoothly transitioning from a first plasma condition to a second plasma condition in a plasma processing chamber. An apparatus for plasma processing may be equipped with an RF power supply coupled to an impedance matching network to smoothly switch from a continuous wave (CW) plasma to a pulsing plasma, reversely, or in alternation without quenching the plasma. Or, the plasma processing chamber may be equipped to smoothly switch from a pulsing plasma at a first duty cycle to a pulsing mode at a second duty cycle without quenching the plasma. Such transitions may occur by ramping RF power, ramping duty cycle, and/or ramping pulsing frequency of the RF power supply being delivered to the plasma processing chamber so that impedance can be smoothly changed and matched by the impedance matching network during the transitions.Type: ApplicationFiled: May 5, 2017Publication date: November 16, 2017Applicant: Lam Research CorporationInventors: Canfeng Lai, Liang Meng
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Publication number: 20170236688Abstract: A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.Type: ApplicationFiled: February 9, 2017Publication date: August 17, 2017Inventors: James Eugene Caron, Ivelin Angelov, Jason Lee Treadwell, Joon Hong Park, Canfeng Lai
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Publication number: 20170194128Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises an inductive coil disposed within a conductive plate, which may comprise nested conductive rings. The inductive coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the inductive coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.Type: ApplicationFiled: March 17, 2017Publication date: July 6, 2017Inventors: Canfeng LAI, Jeffrey TOBIN, Peter I. PORSHNEV, Jose Antonio MARIN
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Publication number: 20160013020Abstract: Systems and methods for producing energetic neutrals include a remote plasma generator configured to generate plasma in a plasma region. An ion extractor is configured to extract high energy ions from the plasma. A substrate support is arranged in a processing chamber and is configured to support a substrate. A neutral extractor and gas dispersion device is arranged between the plasma region and the substrate support. The neutral extractor and gas dispersion device is configured to extract energetic neutrals from the high energy ions, to supply the energetic neutrals to the substrate and to disperse precursor gas into the processing chamber.Type: ApplicationFiled: June 16, 2015Publication date: January 14, 2016Inventors: Kaihan Ashtiani, Canfeng Lai, Liang Meng
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Patent number: D946534Type: GrantFiled: October 25, 2019Date of Patent: March 22, 2022Assignee: Applied Materials, Inc.Inventors: Adam Fischbach, Kien N. Chuc, Canfeng Lai, Carlaton Wong