Abstract: A system that can maintain and track the position of a single nanoparticle in three dimensions for a prolonged period has been disclosed. The system allows for continuously imaging the particle to observe any interactions it may have. The system also enables the acquisition of real-time sequential spectroscopic information from the particle. The apparatus holds great promise in performing single molecule spectroscopy and imaging on a non-stationary target.

Abstract: A system that can maintain and track the position of a single nanoparticle in three dimensions for a prolonged period has been disclosed. The system allows for continuously imaging the particle to observe any interactions it may have. The system also enables the acquisition of real-time sequential spectroscopic information from the particle. The apparatus holds great promise in performing single molecule spectroscopy and imaging on a non-stationary target.

Abstract: An air platen assembly is described and includes a platen that has a plurality of concentric rings. Each of the rings has a plurality of openings in order to provide a cushion of air to a CMP belt. At least one of the rings extends beyond an outer edge of a wafer to be planarized by the CMP belt. A support is attached with the platen and has a plurality of air ports for pressurized air to pass to the rings of the platen. A gasket is positioned between the support and the platen and has a plurality of cutouts that align with the openings and the air ports. A base is also included and supports the support.

Abstract: Broadly speaking, a method for controlling a chemical mechanical planarization (CMP) process to obtain a desired result is provided. More specifically, the method incorporates a first neural network to estimate a CMP result and a second neural network to tune CMP control parameters used to obtain the CMP result. The second neural network tunes the CMP control parameters to minimize a difference between the CMP result and a desired CMP result.

Abstract: An invention is provided for a platen for use in a CMP system. The platen includes an inner set of pressure sub regions capable of providing pressure to a polishing pad disposed above the platen. Each of the inner pressure sub regions is disposed below a wafer and within a circumference of the wafer. In addition, the platen includes an outer set of pressure sub regions capable of providing pressure to a polishing pad. Each of the outer set of pressure sub regions is disposed below the wafer and outside the circumference of the wafer. In this manner, the outer set of pressure sub regions is capable of shaping the polishing pad to achieve a particular removal rate.

Abstract: Methods for dispensing slurry in a linear chemical mechanical planarization (CMP) system are provided. One method involves the use of a pulsing flow of slurry instead of a continuous flow of slurry. Another method involves spraying a mist of slurry onto the polishing pad. Yet another method involves controlling the gap between the nozzles from which the slurry is dispensed and the top surface of the polishing pad. Each of these methods reduces the amount of slurry used during a CMP operation.

Abstract: As one of many embodiments of the present invention, a seamless polishing apparatus for utilization in chemical mechanical polishing is provided. The seamless polishing apparatus includes a polishing pad where the polishing pad is shaped like a belt and has no seams. The seamless polishing apparatus also includes a base belt where the base belt includes a reinforcement layer where the reinforcement layer is a fibrous-type material. In addition, the polishing pad is located over the base belt.

Abstract: An end point detection system may compare a production image developed during processing of production semiconductor wafer with a reference image. The reference image is representative of a desired state of processing of the production semiconductor wafer. The reference image is determined by processing a reference semiconductor wafer. The reference semiconductor wafer may be part of a wafer group of similar wafers that includes the production semiconductor wafer. The end point detection system may dynamically develop the production image during processing of the production semiconductor wafer. Indication may be provided by the end point detection system when the reference image and the production image are substantially similar.

Abstract: Methods are provided for monitoring and controlling a chemical mechanical planarization (CMP) process. Relationships between motor torques and CMP process parameters are determined and utilized to provide a basis for monitoring and controlling the CMP process. Motor current measurements obtained during the CMP process are converted to motor torques to provide for use of the relationships in monitoring and controlling the CMP process. The motor current measurements and relationships are also used to determine and monitor a coefficient of friction present during the CMP process.

Abstract: A method for processing a wafer using a chemical mechanical planarization (CMP) apparatus is provided. The method includes providing a wafer to be processed and heating a slurry to be applied to a polishing pad of the CMP apparatus. The method further includes applying the heated slurry to the polishing pad, and polishing the wafer using the heated slurry. The method also includes stopping the heating of the slurry for a subsequent wafer to be processed.

Abstract: An air platen assembly is described and includes a platen that has a plurality of concentric rings. Each of the rings has a plurality of openings in order to provide a cushion of air to a CMP belt. At least one of the rings extends beyond an outer edge of a wafer to be planarized by the CMP belt. A support is attached with the platen and has a plurality of air ports for pressurized air to pass to the rings of the platen. A gasket is positioned between the support and the platen and has a plurality of cutouts that align with the openings and the air ports. A base is also included and supports the support.

Abstract: An optical window structure for use in chemical mechanical planarization is provided. The optical window structure includes a polishing pad and an optical window opening in the polishing pad. The optical window structure also includes a molded optical window attached to an underside of the polishing pad, a molded portion of the optical window at least partially protruding into the optical window opening in the polishing pad.

Abstract: A platen is disclosed. The platen includes a support surface for supporting a portion of a linear polishing belt during a chemical mechanical polishing (CMP) operation. The platen also includes a plurality of fluid outlets oriented throughout the support surface. The orientation defines an asymmetric pattern where each of the plurality of fluid outlets is capable of outputting a controlled fluid toward an underside of the linear polishing belt.

Abstract: An air platen assembly is described and includes a platen that has a plurality of concentric rings. Each of the rings has a plurality of openings in order to provide a cushion of air to a CMP belt. At least one of the rings extends beyond an outer edge of a wafer to be planarized by the CMP belt. A support is attached with the platen and has a plurality of air ports for pressurized air to pass to the rings of the platen. A gasket is positioned between the support and the platen and has a plurality of cutouts that align with the openings and the air ports. A base is also included and supports the support.

Abstract: A platen for use in chemical mechanical planarization (CMP) systems is disclosed. The platen is arranged below a linear polishing pad and designed to apply a controlled fluid flow to the underside of the linear polishing pad. The platen includes a leading zone containing a first plurality of output holes. The leading zone is oriented more proximate to an upstream region of the linear polishing pad. The platen also includes a trailing zone containing a second plurality of output holes. The trailing zone is oriented more proximate to a downstream region of the linear polishing pad. The leading zone and the trailing zone are independently controlled and designed to output the controlled fluid flow independently from each of the first plurality of output holes and the second plurality of output holes.

Abstract: An apparatus for improving performance of a wafer polishing apparatus is described. The apparatus includes a platen in a support assembly having a plurality of fluid channels and at least one region of altered topography positioned on a portion of the platen surface.

Abstract: A belt for polishing a workpiece such as a semiconductor wafer in a chemical mechanical polishing system includes a polymeric layer forming an endless loop and having a polishing surface on one side of the endless loop. The belt is manufactured by molding a polymeric material such as urethane in a cylindrical mold. The belt is thus made from a single layer, reducing weight, size, cost and maintenance requirements.

Abstract: As one of many embodiments of the present invention, a seamless polishing apparatus for utilization in chemical mechanical polishing is provided. The seamless polishing apparatus includes a polishing pad where the polishing pad is shaped like a belt and has no seams. The seamless polishing apparatus also includes a base belt where the base belt includes a reinforcement layer where the reinforcement layer is a fibrous-type material. In addition, the polishing pad is located over the base belt.

Abstract: In a linear chemical mechanical planarization (CMP) system, a surface of each roller of a pair of rollers is disclosed which includes a first set of grooves covering a first portion of the surface of the roller where the first set of grooves has a first pitch that angles outwardly toward a first outer edge of the roller. The surface also includes a second set of grooves covering a second portion of the surface of the roller where the second set of grooves has a second pitch that angles outwardly toward a second outer edge of the roller with the second pitch angling away from the first pitch. The surface further includes a first set of lateral channels arranged along the first portion, and a second set of lateral channels arranged along the second portion. The first set of lateral channels crosses the first set of grooves, and the second set of lateral channels crosses the second set of grooves.

Abstract: In a linear chemical mechanical planarization (CMP) system, a surface of each roller of a pair of rollers is disclosed which includes a first set of grooves covering a first portion of the surface of the roller where the first set of grooves has a first pitch that angles outwardly toward a first outer edge of the roller. The surface also includes a second set of grooves covering a second portion of the surface of the roller where the second set of grooves has a second pitch that angles outwardly toward a second outer edge of the roller with the second pitch angling away from the first pitch. The surface further includes a first set of lateral channels arranged along the first portion, and a second set of lateral channels arranged along the second portion. The first set of lateral channels crosses the first set of grooves, and the second set of lateral channels crosses the second set of grooves.