Abstract: Method of operating an apparatus which allows etching different substrate etch areas of a substrate having different pattern densities at essentially the same etch rate. The apparatus includes (a) a chamber; (b) an anode and a cathode in the chamber; and (c) a bias power system coupled to the cathode, wherein the cathode includes multiple cathode segments. The operation method is as follows. A substrate to be etched is placed between the anode and cathode, wherein the substrate includes N substrate etch areas, and the N substrate etch areas are directly above the N cathode segments. N bias powers are determined which when being applied to the N cathode segments during an etching of the substrate, will result in essentially a same etch rate for the N substrate etch areas. Then, the bias power system is used to apply the N bias powers the N cathode segments.

Abstract: A photomask repair method is provided which has the spatial resolution of a focused energy beam process without the corresponding potential for damage to the photomask pattern and underlying transparent substrate. A photomask defect is repaired by first providing a masking film over the photomask pattern. Next, a high spatial resolution focused energy beam repair technique, such as laser ablation, focused ion beam, or electron beam, is used to remove a portion of the masking film which corresponds to an underlying defect in the photomask pattern. After the defect in the photomask pattern has been exposed and the rest of the non-defective photomask pattern is protected by the masking film, a chemical etching process is used to remove the defect which selectively etches the photomask pattern material without harming the underlying substrate. Once the defect has been removed, the masking film is removed.

Abstract: An apparatus (and method for operating the same) which allows etching different substrate etch areas of a substrate having different pattern densities at essentially the same etch rate. The apparatus includes (a) a chamber; (b) an anode and a cathode in the chamber; and (c) a bias power system coupled to the cathode, wherein the cathode includes multiple cathode segments. The operation method includes the steps of: (i) placing a substrate to be etched between the anode and cathode, wherein the substrate includes N substrate etch areas, and the N substrate etch areas are directly above the N cathode segments; (ii) determining N bias powers which, when being applied to the N cathode segments during an etching of the substrate, will result in essentially a same etch rate for the N substrate etch areas; and (iii) using the bias power system to apply the N bias powers the N cathode segments.

Abstract: A light scattering EUVL mask and a method of forming the same comprises depositing a crystalline silicon layer over an ultra low expansion substrate, depositing a hardmask over the crystalline silicon layer, patterning the hardmask; etching the crystalline silicon layer, removing the hardmask, and depositing a Mo/Si layer over the crystalline silicon layer, wherein etched regions of the crystalline silicon layer comprise uneven surfaces in the etched regions. The method further comprises depositing a photoresist mask over the hardmask, creating a pattern in the photoresist mask, and transferring the pattern to the hardmask.

Abstract: A method for controlling the linewidth of a feature formed within an advanced lithography mask includes electrochemically depositing an additive material on exposed sidewalls of an etched first layer of the mask, wherein the top of the etched first layer remains covered by a hardmask used during the etching of the first layer. A second layer beneath the etched first layer is resistant to the electrochemical deposition of the additive material thereupon.