Abstract: A method for pre-programming a matrix of phase-change memory cells, including a phase-change material positioned between two conducting electrodes and able to be reversely electrically modified so as to vary the resistivity of the memory cell. A dielectric layer is provided with the memory cell having an original resistive state at the end of the memory cell production process. A pre-programming of the matrix is executed prior to mounting a component containing the matrix on a support. A breakdown voltage is applied to a selection of memory cells so that, for each one of the selected cells, the layer of the dielectric material breaks down to bring the cell from the original resistive state to a second resistive state.

Abstract: A method for pre-programming a matrix of phase-change memory cells, including a phase-change material positioned between two conducting electrodes and able to be reversely electrically modified so as to vary the resistivity of the memory cell. A dielectric layer is provided with the memory cell having an original resistive state at the end of the memory cell production process. A pre-programming of the matrix is executed prior to mounting a component containing the matrix on a support. A breakdown voltage is applied to a selection of memory cells so that, for each one of the selected cells, the layer of the dielectric material breaks down to bring the cell from the original resistive state to a second resistive state.

Abstract: The invention relates to a thin film having a thickness of less than 10 nm, made of oxidizable semi-conductor material and patterned in the form of patterns. To prevent the dewetting phenomenon of said patterns, lateral oxidized zones are arranged at the periphery of each pattern of the thin film so as to form an anchoring. This anchoring can be achieved by forming an oxide layer over the whole of the thin film and then depositing a nitride layer. Then the nitride and oxide layers and the thin film are patterned and the thin film is laterally oxidized so that each pattern of the thin film comprises, at the periphery thereof, an oxidized zone of predetermined width. The nitride and oxide layers are then removed so as to release the patterns oxidized at their periphery.

Abstract: The invention relates to a thin film having a thickness of less than 10 nm, made of oxidizable semi-conductor material and patterned in the form of patterns. To prevent the dewetting phenomenon of said patterns, lateral oxidized zones are arranged at the periphery of each pattern of the thin film so as to form an anchoring. This anchoring can be achieved by forming an oxide layer over the whole of the thin film and then depositing a nitride layer. Then the nitride and oxide layers and the thin film are patterned and the thin film is laterally oxidized so that each pattern of the thin film comprises, at the periphery thereof, an oxidized zone of predetermined width. The nitride and oxide layers are then removed so as to release the patterns oxidized at their periphery.