Patents by Inventor Carine Perrin

Carine Perrin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080280439
    Abstract: A method of forming a nickel monosilicide layer on silicon-containing features of an electronic device that includes depositing a nickel film over the silicon-containing features. The nickel film is co-deposited with a selected material. The selected material has an atomic percentage in a range of about 10% to 25%. A single anneal step is then applied to the nickel film thus directly forming the nickel monosilicide layer.
    Type: Application
    Filed: May 8, 2007
    Publication date: November 13, 2008
    Applicant: Atmel Corporation
    Inventors: Loeizig Ehouarne, Dominique Mangelinck, Magali Putero, Carine Perrin, Khalid Hoummada, Romain Coppard