Abstract: A subscriber unit (100) determines that there is information to transmit, and requests an amount of bandwidth. Upon receipt of the request for bandwidth from the subscriber unit, the fixed network equipment (FNE; 102) determines whether the requested bandwidth is available. If yes, the FNE dynamically determines at least a first timer value to be used by the subscriber unit to detect a loss of granted bandwidth, and transmits a reservation grant to the subscriber unit granting the request. The reservation grant comprises the at least first timer value. Upon receipt of the reservation grant, the subscriber unit extracts the at least first timer value from the reservation grant and uses the at least first timer value to detect loss of granted bandwidth.

Abstract: Disclosed is an anionic diinitiator prepared using a diisopropenyl benzene compound and an organo lithium compound having primary polymerization sites. The anionic diinitiators are prepared by admixing a diisopropenyl benzene compound with diethyl ether, ethylene, an organo lithium compound, and a solvent under reaction conditions sufficient to prepare a diinitiator having primary lithium alkyl reactive sites. The diinitiators are particularly useful in preparing block copolymers.

Abstract: Disclosed is a process for preparing polymers and copolymer blocks of conjugated dienes with high amounts of branching, commonly referred to as vinyl content, comprising the use of at least two microstructure control agents. One of the microstructure control agents can be a bulk microstructure control agents such as diethyl ether. The other microstructure control agent is a specific microstructure control agent such as 1,2-diethoxypropane. The use of a bulk and a specific microstructure control agent together can allow for the production of high levels of vinyl content at high polymerization rates without the undesirable affects experienced with either one alone.

Abstract: In a method of fabricating complementary bipolar transistors with SiGe base regions the base regions of the NPN and PNP transistors are formed one after the other over two collector regions 20, 14 by epitaxial deposition of crystalline silicon-germanium layers 32a, 36a. With this method the germanium profile of the SiGe layers can be freely selected for both NPN and PNP transistors in thus enabling complementary transistor performance to be optimized individually. The SiGe layers 32a, 36a can be doped with an n-type or p-type dopant during or after deposition of the silicon-germanium layers 32a, 36a.

Abstract: Disclosed is an improvement to a process for preparing coupled styrenic block copolymers wherein adding from about 0.01 to about 1.5 equivalents of a metal alkyl compound per equivalent of living polymer chain ends to the cement, during or after polymerization, improves coupling efficiencies. The resultant radial styrenic block copolymers have reduced amounts of 5+ arm oligomers which can be very desirable is certain applications, such as the modification of bitumen.

Abstract: The present invention relates to a method of forming an interfacial oxide in a bipolar transistor. The method comprises the step of rinsing a wafer having an exposed base region with ozonated deionized water, thereby forming an interfacial oxide layer over the exposed base region.