Abstract: A method of making a combined sinter-ready silver film and carrier comprises the steps of: a) creating a carrier comprising designed openings; b) casting a silver film layer into the designed openings, for example casting a silver paste; and c) drying the carrier and silver film layer to form the combined sinter-ready silver film and carrier. The carrier may comprise a plastic carrier, which may be created by permanently bonding two plastic films, using a plasma bonding process or using a temperature stable glue. The carrier may comprise a stencil layer and a backing layer. The stencil layer may define the designed openings. The backing layer may be configured for sealing a bottom of the designed openings, wherein at the start of step b), a top of the designed openings may be open for receiving the cast silver film layer.

Abstract: A lead-free solder alloy comprising: from 1 to 9 wt. % copper, at least one of: from greater than 0 to 1 wt. % nickel, from greater than 0 to 10 wt. % germanium, from greater than 0 to 10 wt. % manganese, from greater than 0 to 10 wt. % aluminium, from greater than 0 to 10 wt. % silicon, from greater than 0 to 9 wt. % bismuth, from greater than 0 to 5 wt. % indium, from greater than 0 to 1 wt. % titanium, from greater than 0 to 2 wt. % lanthanum, from greater than 0 to 2 wt. % neodymium, optionally one or more of: up to 1 wt. % for: chromium, gallium, cobalt, iron, phosphorous, gold, tellurium, selenium, calcium, vanadium, molybdenum, platinum, magnesium; up to 5 wt. % silver, up to 1 wt. % zinc, up to 2 wt. % rare earth metals, excluding lanthanum and neodymium, and the balance tin together with any unavoidable impurities.

Abstract: A solder material for use in electronic assembly, the solder material comprising: solder layers; and a core layer comprising a core material, the core layer being sandwiched between the solder layers, wherein: the thermal conductivity of the core material is greater than the thermal conductivity of the solder.

Abstract: A solder material for use in electronic assembly, the solder material comprising: solder layers; and a core layer comprising a core material, the core layer being sandwiched between the solder layers, wherein: the thermal conductivity of the core material is greater than the thermal conductivity of the solder.

Abstract: A method of making a combined sinter-ready silver film and carrier (1) comprises the steps of: a) creating a carrier (2) comprising designed openings (5); b) casting a silver film layer (7) into the designed openings (5), for example casting a silver paste; and c) drying the carrier (2) and silver film layer (7) to form the combined sinter-ready silver film and carrier (1). The carrier (2) may comprise a plastic carrier, which may be created by permanently bonding two plastic films, using a plasma bonding process or using a temperature stable glue. The carrier (2) may comprise a stencil layer (3) and a backing layer (4). The stencil layer (3) may define the designed openings (5). The backing layer (4) may be configured for sealing a bottom of the designed openings (5), wherein at the start of step b), a top of the designed openings (5) may be open for receiving the cast silver film layer (7).

Abstract: A method of fabricating a solar module by interconnection of a plurality of photovoltaic (PV) cells in which at least a first PV cell is interconnected to a second PV cell using an electrically-conductive adherent comprising or consisting of a solder paste. The solder paste comprises particles of solder alloy dispersed in a solder flux. The solder alloy comprises a Sn-containing solder alloy having a liquidus temperature of less than 225° C.

Abstract: A lead-free solder alloy comprising: from 1 to 9 wt. % copper, at least one of: from greater than 0 to 1 wt. % nickel, from greater than 0 to 10 wt. % germanium, from greater than 0 to 10 wt. % manganese, from greater than 0 to 10 wt. % aluminium, from greater than 0 to 10 wt. % silicon, from greater than 0 to 9 wt. % bismuth, from greater than 0 to 5 wt. % indium, from greater than 0 to 1 wt. % titanium, from greater than 0 to 2 wt. % lanthanum, from greater than 0 to 2 wt. % neodymium, optionally one or more of: up to 1 wt. % for chromium, gallium, cobalt, iron, phosphorous, gold, tellurium, selenium, calcium, vanadium, molybdenum, platinum, magnesium; up to 5 wt. % silver, up to 1 wt. % zinc, up to 2 wt. % rare earth metals, excluding lanthanum and neodymium, and the balance tin together with any unavoidable impurities.