Patents by Inventor Carl Biver, JR.

Carl Biver, JR. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Enhanced E-field sensing using negative capacitance FET subthreshold slope enhancement
    Patent number: 8653510
    Abstract: In certain embodiments, a field effect transistor (FET) can include a substrate, a source electrode, a drain electrode, a ferroelectric material layer, a first gate electrode, and a second gate electrode to maintain an optimal polarization state of the ferroelectric material layer. In other embodiments, a FET can include a film, first and second gates on the film, a ferroelectric material layer covering the film and gates, an insulating layer substantially covering the ferroelectric material layer, a source and a drain on the insulating layer, and a pentacene layer.
    Type: Grant
    Filed: December 17, 2010
    Date of Patent: February 18, 2014
    Assignee: SRI International
    Inventors: John Hodges, Jr., Marc Rippen, Carl Biver, Jr.
  • ENHANCED E-FIELD SENSING USING NEGATIVE CAPACITANCE FET SUBTHRESHOLD SLOPE ENHANCEMENT
    Publication number: 20110147723
    Abstract: In certain embodiments, a field effect transistor (FET) can include a substrate, a source electrode, a drain electrode, a ferroelectric material layer, a first gate electrode, and a second gate electrode to maintain an optimal polarization state of the ferroelectric material layer. In other embodiments, a FET can include a film, first and second gates on the film, a ferroelectric material layer covering the film and gates, an insulating layer substantially covering the ferroelectric material layer, a source and a drain on the insulating layer, and a pentacene layer.
    Type: Application
    Filed: December 17, 2010
    Publication date: June 23, 2011
    Applicant: SRI INTERNATIONAL
    Inventors: John Hodges, JR., Marc Rippen, Carl Biver, JR.