Patents by Inventor Carl C. Blake, Jr.

Carl C. Blake, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor electronic components and circuits
    Patent number: 9293458
    Abstract: An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor both encased in a single package. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, a drain electrode of the high-voltage depletion-mode transistor is electrically connected to a drain lead of the single package, a gate electrode of the low-voltage enhancement-mode transistor is electrically connected to a gate lead of the single package, a gate electrode of the high-voltage depletion-mode transistor is electrically connected to an additional lead of the single package, and a source electrode of the low-voltage enhancement-mode transistor is electrically connected to a conductive structural portion of the single package.
    Type: Grant
    Filed: October 18, 2013
    Date of Patent: March 22, 2016
    Assignee: Transphorm Inc.
    Inventors: Primit Parikh, James Honea, Carl C. Blake, Jr., Robert Coffie, Yifeng Wu, Umesh Mishra
  • SEMICONDUCTOR ELECTRONIC COMPONENTS AND CIRCUITS
    Publication number: 20140042495
    Abstract: An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor both encased in a single package. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, a drain electrode of the high-voltage depletion-mode transistor is electrically connected to a drain lead of the single package, a gate electrode of the low-voltage enhancement-mode transistor is electrically connected to a gate lead of the single package, a gate electrode of the high-voltage depletion-mode transistor is electrically connected to an additional lead of the single package, and a source electrode of the low-voltage enhancement-mode transistor is electrically connected to a conductive structural portion of the single package.
    Type: Application
    Filed: October 18, 2013
    Publication date: February 13, 2014
    Applicant: Transphorm Inc.
    Inventors: Primit Parikh, James Honea, Carl C. Blake, Jr., Robert Coffie, Yifeng Wu, Umesh Mishra
  • Semiconductor electronic components and circuits
    Patent number: 8624662
    Abstract: An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor both encased in a single package. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, a drain electrode of the high-voltage depletion-mode transistor is electrically connected to a drain lead of the single package, a gate electrode of the low-voltage enhancement-mode transistor is electrically connected to a gate lead of the single package, a gate electrode of the high-voltage depletion-mode transistor is electrically connected to an additional lead of the single package, and a source electrode of the low-voltage enhancement-mode transistor is electrically connected to a conductive structural portion of the single package.
    Type: Grant
    Filed: February 5, 2010
    Date of Patent: January 7, 2014
    Assignee: Transphorm Inc.
    Inventors: Primit Parikh, James Honea, Carl C. Blake, Jr., Robert Coffie, Yifeng Wu, Umesh Mishra
  • SEMICONDUCTOR ELECTRONIC COMPONENTS AND CIRCUITS
    Publication number: 20110193619
    Abstract: An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor both encased in a single package. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, a drain electrode of the high-voltage depletion-mode transistor is electrically connected to a drain lead of the single package, a gate electrode of the low-voltage enhancement-mode transistor is electrically connected to a gate lead of the single package, a gate electrode of the high-voltage depletion-mode transistor is electrically connected to an additional lead of the single package, and a source electrode of the low-voltage enhancement-mode transistor is electrically connected to a conductive structural portion of the single package.
    Type: Application
    Filed: February 5, 2010
    Publication date: August 11, 2011
    Applicant: Transphorm Inc.
    Inventors: Primit Parikh, James Honea, Carl C. Blake, JR., Robert Coffie, Yifeng Wu, Umesh Mishra