Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first substrate; a second substrate; and an array of interconnects electrically coupling the first substrate to the second substrate. In an embodiment, the array of interconnects comprises first interconnects, wherein the first interconnects have a first volume and a first material composition, and second interconnects, wherein the second interconnects have a second volume and a second material composition, and wherein the first volume is different than the second volume and/or the first material composition is different than the second material composition.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first substrate; a second substrate; and an array of interconnects electrically coupling the first substrate to the second substrate. In an embodiment, the array of interconnects comprises first interconnects, wherein the first interconnects have a first volume and a first material composition, and second interconnects, wherein the second interconnects have a second volume and a second material composition, and wherein the first volume is different than the second volume and/or the first material composition is different than the second material composition.

Abstract: In one embodiment, the present invention includes a method for placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, where the TIM is formed of an alloy including indium (In) and tin (Sn), and bonding the TIM to the die and the heat spreader to form at least one quaternary intermetallic compound (IMC) layer. Other embodiments are described and claimed.

Abstract: A method includes providing a mixture of molten indium and molten aluminum, and agitating the mixture while reducing its temperature until the aluminum changes from liquid phase to solid phase, forming particles distributed within the molten indium. Agitation of the mixture sufficiently to maintain the aluminum substantially suspended in the molten aluminum continues while further reducing the temperature of the mixture until the indium changes from a liquid phase to a solid phase. A metallic composition is formed, including indium and particles of aluminum suspended within the indium, the aluminum particles being substantially free from oxidation. The metallic (solder) composition can be used to form an assembly, including an integrated circuit (IC) device, at least a first thermal component disposed adjacent to the IC device, and a solder TIM interposed between and thermally coupled with each of the IC device and the first thermal component.

Abstract: Methods and associated structures of forming an indium containing solder material directly on an active region of a copper IHS is enabled. A copper indium containing solder intermetallic is formed on the active region of the IHS. The solder intermetallic improves the solder-TIM integration process for microelectronic packaging applications.

Abstract: In one embodiment, the present invention includes a method for placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, where the TIM is formed of an alloy including indium (In) and tin (Sn), and bonding the TIM to the die and the heat spreader to form at least one quaternary intermetallic compound (IMC) layer. Other embodiments are described and claimed.

Abstract: In one embodiment, the present invention includes a method for placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, where the TIM is formed of an alloy including indium (In) and tin (Sn), and bonding the TIM to the die and the heat spreader to form at least one quaternary intermetallic compound (IMC) layer. Other embodiments are described and claimed.

Abstract: Some embodiments of the invention include a coated thermal interface to bond a die with a heat spreader. The coated thermal interface may be used to bond the die with the heat spreader without flux. Other embodiments are described and claimed.

Abstract: A process of making an integrated heat spreader is disclosed. The integrated heat spreader is stamped with a thermal interface material under conditions to form a diffusion bonding zone between the integrated heat spreader and the thermal interface material. The thermal interface material can have one of several cross-sectional profiles to facilitate reflow thereof against a die during a method of assembling a packaged microelectronic device. The thermal interface material can also have one of several footprints to further facilitate reflow thereof against the die.

Abstract: A method includes providing a mixture of molten indium and molten aluminum, and agitating the mixture while reducing its temperature until the aluminum changes from liquid phase to solid phase, forming particles distributed within the molten indium. Agitation of the mixture sufficiently to maintain the aluminum substantially suspended in the molten aluminum continues while further reducing the temperature of the mixture until the indium changes from a liquid phase to a solid phase. A metallic composition is formed, including indium and particles of aluminum suspended within the indium, the aluminum particles being substantially free from oxidation. The metallic (solder) composition can be used to form an assembly, including an integrated circuit (IC) device, at least a first thermal component disposed adjacent to the IC device, and a solder TIM interposed between and thermally coupled with each of the IC device and the first thermal component.

Abstract: A method includes providing a mixture of molten indium and molten aluminum, and agitating the mixture while reducing its temperature until the aluminum changes from liquid phase to solid phase, forming particles distributed within the molten indium. Agitation of the mixture sufficiently to maintain the aluminum substantially suspended in the molten aluminum continues while further reducing the temperature of the mixture until the indium changes from a liquid phase to a solid phase. A metallic composition is formed, including indium and particles of aluminum suspended within the indium, the aluminum particles being substantially free from oxidation. The metallic (solder) composition can be used to form an assembly, including an integrated circuit (IC) device, at least a first thermal component disposed adjacent to the IC device, and a solder TIM interposed between and thermally coupled with each of the IC device and the first thermal component.

Abstract: A method for forming a high thermal conductivity heat sink to IC package interface is disclosed. The method uses reactive getter materials added to a two phase solder system having a phase change temperature that is about the normal operating temperature range of the IC, to bind absorbed and dissolved oxygen in the two phase solder interface material at or near the air to solder surface. Over time this chemical binding action results in an oxide layer at the air to solder surface that slows the rate of oxygen absorption into the solder interface material, and thus reduces the harmful oxidation of the solder to IC package interface and the solder to heat sink interface.

Abstract: Methods and associated structures of forming an indium containing solder material directly on an active region of a copper HIS is enabled. A copper indium containing solder intermetallic is formed on the active region of the IHS. The solder intermetallic improves the solder-TIM integration process for microelectronic packaging applications.

Abstract: A composition includes a solder paste matrix and a solder mixture including a tin-based solder alloy. The composition also includes a discrete dispersion of a metal. The tin-based alloy includes a melting first temperature and the metal includes a melting second temperature. The melting second temperature is greater than the melting first temperature. The discrete dispersion is in a particle range of a majority passing minus 520-mesh. A process includes blending the solder mixture and the metal under non-alloying conditions to achieve the discrete dispersion of the metal. A process includes reflowing the composition such that the composition when solidified, has a melting point that is higher than the solder mixture in the composition.

Abstract: In one embodiment, the present invention includes a method for placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, where the TIM is formed of an alloy including indium (In) and tin (Sn), and bonding the TIM to the die and the heat spreader to form at least one quaternary intermetallic compound (IMC) layer. Other embodiments are described and claimed.

Abstract: A cooling device including a thermally conductive body with a first mating surface, a first solder wettable material disposed in a pattern at a portion of the first mating surface, and a reflowable solder material disposed at the first mating surface. A portion of the solder material is configured to be capable of contacting an adjacently disposed second mating surface, and when melted, to form a single flow front through a bond line gap between the first mating surface of the cooling device and the second mating surface of, for example, a thermal component. A mating surface of the cooling device is positioned adjacent to a mating surface of a thermal component and the solder material is heated at least to its melting point.

Abstract: In one embodiment, an apparatus comprises a semiconductor device, a heat dissipation assembly, and a thermal interface material disposed between the semiconductor device and the heat dissipation assembly, wherein the thermal interface layer comprises a pre-coated flux material.

Abstract: A process of making an integrated heat spreader is disclosed. The integrated heat spreader is stamped with a thermal interface material under conditions to form a diffusion bonding zone between the integrated heat spreader and the thermal interface material. The thermal interface material can have one of several cross-sectional profiles to facilitate reflow thereof against a die during a method of assembling a packaged microelectronic device. The thermal interface material can also have one of several footprints to further facilitate reflow thereof against the die.

Abstract: A process of making an integrated heat spreader is disclosed. The integrated heat spreader is stamped with a thermal interface material under conditions to form a diffusion bonding zone between the integrated heat spreader and the thermal interface material. The thermal interface material can have one of several cross-sectional profiles to facilitate reflow thereof against a die during a method of assembling a packaged microelectronic device. The thermal interface material can also have one of several footprints to further facilitate reflow thereof against the die.

Abstract: A method includes providing a mixture of molten indium and molten aluminum, and agitating the mixture while reducing its temperature until the aluminum changes from liquid phase to solid phase, forming particles distributed within the molten indium. Agitation of the mixture sufficiently to maintain the aluminum substantially suspended in the molten aluminum continues while further reducing the temperature of the mixture until the indium changes from a liquid phase to a solid phase. A metallic composition is formed, including indium and particles of aluminum suspended within the indium, the aluminum particles being substantially free from oxidation. The metallic (solder) composition can be used to form an assembly, including an integrated circuit (IC) device, at least a first thermal component disposed adjacent to the IC device, and a solder TIM interposed between and thermally coupled with each of the IC device and the first thermal component.