Abstract: Provided is a method of depolymerizing polyesters from post-consumer products, such as beverage bottles, to produce a high purity reaction product. For the depolymerization reaction, the polyesters are reacted with an alcohol and an amine organocatalyst at a temperature of about 150° C. to about 250° C. In one application, the use of an organocatalyst with a boiling point significantly lower than the boiling point of the reactant alcohol allows for the ready recycling of the amine organocatalyst. In another application, performing the depolymerization reaction under pressure at a temperature above the boiling point of the alcohol allows for accelerated depolymerization rates and the recovery of the organocatalyst with no further heat input.

Abstract: Provided is a method of depolymerizing polyesters from post-consumer products, such as beverage bottles, to produce a high purity reaction product. For the depolymerization reaction, the polyesters are reacted with an alcohol and an amine organocatalyst at a temperature of about 150° C. to about 250° C. In one application, the use of an organocatalyst with a boiling point significantly lower than the boiling point of the reactant alcohol allows for the ready recycling of the amine organocatalyst. In another application, performing the depolymerization reaction under pressure at a temperature above the boiling point of the alcohol allows for accelerated depolymerization rates and the recovery of the organocatalyst with no further heat input.

Abstract: Provided is a method of depolymerizing polyesters from post-consumer products, such as beverage bottles, to produce a high purity reaction product. For the depolymerization reaction, the polyesters are reacted with an alcohol and an amine organocatalyst at a temperature of about 150° C. to about 250° C. In one application, the use of an organocatalyst with a boiling point significantly lower than the boiling point of the reactant alcohol allows for the ready recycling of the amine organocatalyst. In another application, performing the depolymerization reaction under pressure at a temperature above the boiling point of the alcohol allows for accelerated depolymerization rates and the recovery of the organocatalyst with no further heat input.

Abstract: Provided is a method of depolymerizing polyesters from post-consumer products, such as beverage bottles, to produce a high purity reaction product. For the depolymerization reaction, the polyesters are reacted with an alcohol having 2 to 5 carbons and an amine organocatalyst at a temperature of about 150° C. to about 250° C. In one application, the use an organocatalyst with a boiling point significantly lower than the boiling point of the reactant alcohol allows for the ready recycling of the amine organocatalyst. In another application, performing the depolymerization reaction under pressure at a temperature above that of the alcohol allows for accelerated depolymerization rates and the recovery of the organocatalyst with no further heat input.

Abstract: Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.

Abstract: A topcoat material for application on top of a photoresist material is disclosed. The topcoat material comprises an acid-inert compound. The topcoat material also comprises a polymer or an oligomer or a cage structure which shows negligible intermixing with the imaging layer and is soluble in aqueous base developer. A method of forming a patterned material layer on a substrate and a coated substrate comprising the topcoat material is also disclosed.

Abstract: A method of creating patterned objects using a class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.

Abstract: A method of lithography is disclosed, which allows for independent resist process optimization of two or more exposure steps that are performed on a single resist layer. By providing for a separate post-exposure bake after each resist exposure step, pattern resolution for each exposure can be optimized. The method can generally be used with different lithographic techniques, and is well-suited for hybrid lithography. It has been applied to the fabrication of a device, in which the active area and the gate levels are defined in separate mask levels using hybrid lithography with an e-beam source and a 248 nm source respectively. Conditions for post-exposure bakes after the two exposure steps are independently adjusted to provide for optimized results.

Abstract: A method of creating patterned objects using a class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.

Abstract: A class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.

Abstract: The present invention relates to a method for the interconnection/repair of circuits on a transparent substrate at ambient temperature using laser induced chemical vapor deposition.

Abstract: Chemical vapor deposition precursors for depositing copper, silver, rhodium and iridium metals on substrates comprise ligand stabilized +1 metal beta-diketonate coordination complexes of said metals. Uses of such precursors in CVD processes are also provided.

Abstract: Chemical vapor deposition precursors for depositing copper, silver, rhodium and iridium metals on substrates comprise ligand stabilized +1 metal beta-diketonate coordination complexes of said metals. Uses of such precursors in CVD processes are also provided.

Abstract: A process for generating a capacitive servo pattern on a magnetic storage disk, comprising the steps of: (1) coating the disk with a solution of noble metal compound to form a film of the compound on the disk, (2) exposing said film to radiation through a mask to generate an image on the film, and (3) plating the disk on the areas exposed to radiation.

Abstract: Alkyldiarylsulfonium salts of 9, 10,-dithiophenoxyanthracene are useful as photoinitiators in resist compositions, such as epoxy resin formulations, particularly using long wavelength light.