Abstract: Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the water in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

Abstract: Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

Abstract: Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the water in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

Abstract: Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

Abstract: Various systems and methods for detecting design and process defects on a wafer, reviewing defects on a wafer, selecting one or more features within a design for use as process monitoring features, or some combination thereof are provided. One system is configured to detect design defects and process defects at locations on a wafer at which images are acquired by an electron beam review subsystem based on defects in a design, additional defects in the design, which are detected by comparing an image of a die in the design printed on the wafer acquired by the electron beam review subsystem to an image of the die stored in a database, and defects detected on the wafer by a wafer inspection system.

Abstract: A semiconductor inspection apparatus performs a hybrid inspection process including cell-to-cell inspection, die-to-die inspection and die-to-golden or die-to-database inspection. The apparatus creates a golden image of a reticle complimentary to portions of the reticle that can be inspected by cell-to-cell inspection or die-to-die inspection. Alternatively, the apparatus creates a reduced database complimentary to portions of the reticle that can be inspected by cell-to-cell inspection or die-to-die inspection.

Abstract: Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

Abstract: Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

Abstract: A semiconductor inspection apparatus identifies regions of a reticle or semiconductor wafer appropriate for cell-to-cell inspection by analyzing a semiconductor design database. Appropriate regions can be identified in a region map for use by offline inspection tools.

Abstract: A system and method for detecting defects on a reticle is disclosed. The method may comprise determining a best focus setting for imaging the reticle; obtaining a first image of the reticle, the first image obtained at the best focus setting plus a predetermined offset; obtaining a second image of the reticle, the second image obtained at the best focus setting minus the predetermined offset; generating a differential image, the differential image representing a difference between the first image and the second image; and identifying a defect on the reticle based on the differential image. The method in accordance with the present disclosure may also be utilized for detecting defects on at least a portion of the reticle.

Abstract: A semiconductor inspection apparatus performs a hybrid inspection process including cell-to-cell inspection, die-to-die inspection and die-to-golden or die-to-database inspection. The apparatus creates a golden image of a reticle complimentary to portions of the reticle that can be inspected by cell-to-cell inspection or die-to-die inspection. Alternatively, the apparatus creates a reduced database complimentary to portions of the reticle that can be inspected by cell-to-cell inspection or die-to-die inspection.

Abstract: A semiconductor inspection apparatus identifies regions of a reticle or semiconductor wafer appropriate for cell-to-cell inspection by analyzing a semiconductor design database. Appropriate regions can be identified in a region map for use by offline inspection tools.

Abstract: Methods and systems for classifying defects detected on a reticle are provided. One method includes determining an impact that a defect detected on a reticle will have on the performance of a device being fabricated on a wafer based on how at least a portion of the reticle prints or will print on the wafer. The defect is located in the portion of the reticle. The method also includes assigning a classification to the defect based on the impact.

Abstract: A system and method for detecting defects on a reticle is disclosed. The method may comprise determining a best focus setting for imaging the reticle; obtaining a first image of the reticle, the first image obtained at the best focus setting plus a predetermined offset; obtaining a second image of the reticle, the second image obtained at the best focus setting minus the predetermined offset; generating a differential image, the differential image representing a difference between the first image and the second image; and identifying a defect on the reticle based on the differential image. The method in accordance with the present disclosure may also be utilized for detecting defects on at least a portion of the reticle.

Abstract: Various computer-implemented methods are provided. One method for generating a process for inspecting reticle layout data includes identifying a first region in the reticle layout data. A printability of the first region is more sensitive to changes in process parameters than a printability of a second region in the reticle layout data. The method also includes assigning one or more inspection parameters to the first region and the second region such that the first region will be inspected during the process with a higher sensitivity than the second region. Another method includes inspecting the first region with a higher sensitivity than the second region. An additional method includes simulating how the reticle layout data will print. Simulation of the first and second regions is performed with one or more different simulation parameters such that the first region is simulated with a higher fidelity than the second region.

Abstract: Computer-implemented methods and systems for determining different process windows for a wafer printing process for different reticle designs are provided. One method includes generating simulated images illustrating how each of the different reticle designs will be printed on a wafer at different values of one or more parameters of the wafer printing process. The method also includes detecting defects in each of the different reticle designs using the simulated images. In addition, the method includes determining a process window for the wafer printing process for each of the different reticle designs based on results of the detecting step.

Abstract: Various systems and methods for detecting design and process defects on a wafer, reviewing defects on a wafer, selecting one or more features within a design for use as process monitoring features, or some combination thereof are provided.

Abstract: Computer-implemented methods for detecting defects in reticle design data are provided. One method includes generating a first simulated image illustrating how the reticle design data will be printed on a reticle using a reticle manufacturing process. The method also includes generating second simulated images using the first simulated image. The second simulated images illustrate how the reticle will be printed on a wafer at different values of one or more parameters of a wafer printing process. The method further includes detecting defects in the reticle design data using the second simulated images. Another method includes the generating steps described above in addition to determining a rate of change in a characteristic of the second simulated images as a function of the different values. This method also includes detecting defects in the reticle design data based on the rate of change.

Abstract: Optical proximity correction methods and apparatus are disclosed. A simulated geometry representing one or more printed features from a reticle is generated using an optical proximity correction (OPC) model that takes into account a reticle design and one or more parameters from a process window of a stepper. An error function is formed that measures a deviation between the simulated geometry and a desired design of the one or more printed features. The error function takes into account parameters (p0 . . . pJ) from across the process window in addition to, or in lieu of, a best focus and a best exposure for the stepper. The reticle design is adjusted in a way that reduces the deviation as measured by the error function, thereby producing an adjusted reticle design.

Abstract: Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.