Abstract: A semiconductor device exhibiting a super-steep retrograde channel profile to reduce susceptibility to “latch up” is achieved by forming a high impurity concentration layer on a semiconductor substrate and forming a diffusion cap layer near the surface of the high impurity concentration layer. Subsequently, a low impurity concentration layer is formed on the diffusion cap layer of the high impurity concentration layer. The diffusion cap layer formed between the high and low impurity concentration layers substantially prevents the impurities contained in the high impurity concentration layer from diffusing into the overlying low impurity concentration layer, thereby achieving a super-steep retrograde channel profile.

Abstract: A transistor is formed comprising a gate electrode with a non-uniform impurity profile increasing from the drain side to the source side, thereby reducing the overlap capacitance between the gate electrode and drain region. In addition, the transverse electrical field in the channel region is maintained by evenly disposing gate impurity atoms throughout the entire gate electrode.