Abstract: Methods and apparatus are disclosed for rapidly providing for a large number of closely spaced points within an area at right angle to the central trajectory of an ion beam data concerning intensity variations, emittance variations and angular variations of elementary beamlets with respect to the central beam trajectory. The technology is particular applicable to the application and control of ribbon beams used for semiconductor implantation.

Abstract: A method and apparatus for powering a high power load (on the order of 50,000 watts or more) can have an input from any of a plurality of different voltage sources, AC or DC. In one embodiment, the AC sources can have a frequency in the range of 16⅔-60 Hertz, and voltages in the range of 480-38,000 volts. The method and apparatus feature cryocooling inverter electronics, which converts an input signal to a high frequency high voltage signal, to, for example, less than about 180 K. A high frequency transformer receives the high frequency high voltage signal and transforms it into a desired voltage level which can then be filtered and/or demodulated and applied to the load. The transformer is preferably comprised of a superconducting material, and then, the inverter and transformer, at least, are actively cooled as required.

Abstract: A method and apparatus for powering a high power load (on the order of 50,000 watts or more) can have an input from any of a plurality of different voltage sources, AC or DC. In one embodiment, the AC sources can have a frequency in the range of 162/3-60 Hertz, and voltages in the range of 480-38,000 volts. The method and apparatus feature cryocooling inverter electronics, which converts an input signal to a high frequency high voltage signal, to, for example, less than about 180K. A high frequency transformer receives the high frequency high voltage signal and transforms it into a desired voltage level which can then be filtered and/or demodulated and applied to the load. The transformer is preferably comprised of a superconducting material, and then, the inverter and transformer, at least, are actively cooled as required. In a particular embodiment, the circuitry replaces the heavy transformer construction used in driving induction motors in an electric traction engine from an overhead line or a third rail.

Abstract: Methods and apparatus for gasification of liquid nitrogen and other cryogenic liquids are provided. The apparatus includes a gasification unit capable of refrigerating at least one cryoelectronics energy converter and utilizing the heat generated thereby to gasify a cryogenic fluid. Refrigeration is provided by the cryogenic fluid in the gasification unit. The gasification unit is preferably capable of gasifying at least 1 liter/hour of cryogenic fluid. The gasification unit can be coupled to a chemical processing unit such that gasified cryogenic fluid produced in the gasification unit can be introduced into the chemical processing unit for use therein. A secondary heat recovery unit can be provided upstream of the chemical processing unit to separate entrained liquid particles from the gasified cryogenic fluid produced by the gasification unit. Cryogenic fluid can be supplied to the gasification unit from an air liquefaction plant, a storage tank, a truck or the like.

Abstract: Methods and apparatus for gasification of liquid nitrogen and other cryogenic liquids are provided. The apparatus includes a gasification unit capable of refrigerating at least one cryoelectronics energy converter and utilizing the heat generated thereby to gasify a cryogenic fluid. Refrigeration is provided by the cryogenic fluid in the gasification unit. The gasification unit is preferably capable of gasifying at least 1 liter/hour of cryogenic fluid. The gasification unit can be coupled to a chemical processing unit such that gasified cryogenic fluid produced in the gasification unit can be introduced into the chemical processing unit for use therein. A secondary heat recovery unit can be provided upstream of the chemical processing unit to separate entrained liquid particles from the gasified cryogenic fluid produced by the gasification unit. Cryogenic fluid can be supplied to the gasification unit from an air liquefaction plant, a storage tank, a truck or the like.

Abstract: A cryogenically cooled circuit, operating at temperatures at which inductors windings of the circuit exhibit superconducting characteristics, provides unique advantages in high performance, preferably high power circuits. Portions of the circuit (or the entire circuit), as opposed to, for example only the superconducting elements (i.e., inductor winding), are refrigerated to cryogenic temperatures. Advantages in the characteristics of not only the superconducting based components but also the diodes, and gating elements such as MOSFET's, yield a uniquely advantageous circuit enabling the operation of, for example, a switching power supplies, frequency converters, and motor speed controllers with increased performance and efficiency. Size, component count, and stability are benefits attained by cryogenically cooling the entire circuit configuration.

Abstract: An actuator in which a magnetostrictor is subjected to magnetic fields produced by a superconducting coil, and the magnetostrictor and coil are maintained at temperatures below the magnetic transition temperature of the magnetostrictor and the superconducting temperature of the coil, typically at temperatures in the range of about 4 to about 130 degrees Kelvin. The magnetostrictor is a laminated Terbium Dysprosium (TbDy) alloy structure and the coil includes high temperature superconducting oxide material. The laminations of the TbDy structure are mechanically loaded in compression and each has a thickness substantially equal less than or equal to the depth of field penetration, and a cooler maintains both the TbDy and superconductor at their optimum temperatures.

Abstract: A cryogenically cooled circuit, operating at temperatures at which inductors windings of the circuit exhibit superconducting characteristics, provides unique advantages in high performance, preferably high power circuits. The entire circuit, as opposed to for example only the superconducting portions of the circuit, are refrigerated to cryogenic temperatures. Advantages in the characteristics of not only the superconducting based components but also the diodes, and gating elements such as MOSFET's, yield a uniquely advantageous circuit enabling the operation of, for example, a switching power supply at lower frequency using larger inductor values. The refrigeration penalty is overcome at power outputs on the order of 50 kilowatts while and equally important, size, component count, and stability benefits are attained by cryogenically cooling the entire circuit configuration.

Abstract: A multipole electron-bombardment type ion source includes an ion chamber defined by chamber walls and magnetic elements of an electrically insulating, permanently magnetized material. The magnetic elements provide mechanical support for anode elements and electrically isolate the anode elements from the chamber walls. In a preferred embodiment, the magnetic elements and the anode elements form a layered structure.

Abstract: A method for reducing contamination in a vacuum processing chamber includes introducing into the vacuum chamber a gas selected to react with the contaminant and form a compound more volatile than the contaminant. The volatile compound is then removed from the vacuum chamber, typically by vacuum pumping. In one embodiment, the vacuum chamber is an ion implantation chamber, the contaminant is phosphorous and the gas is water vapor, which reacts with the phosphorous to form phosphine gas or other high vapor pressure phosphorous-containing substances.

Abstract: A process for high temperature, rapid drive-in diffusion employs a planar blackbody source placed in parallel alignment with a semiconductor wafer in a vacuum processing chamber. The wafer is rapidly heated, preferably to a temperature in the range of 1100.degree. C. to 1300.degree. C. and primarily by radiation which promotes uniformity. Typical diffusions are completed in less than one minute. In order to control diffusion distance at elevated temperatures, the process time and source temperature are carefully controlled, and the peak wafer temperature is monitored.

Abstract: A processor apparatus is provided in which a blackbody radiator having a constant planar energy flux characteristic is placed in opposition to semiconductor material. The blackbody source produces a constant planar energy flux to uniformly heat the material. The source is heated to a sufficiently high temperature for a sufficient time to anneal or activate a semiconductor wafer or to epitaxially regrow a thin epitaxial film. The processor is operated by accomplishing the steps of presenting a blackbody radiator in opposition to semiconductor material to be thermally treated, radiatively heating the material to a sufficiently high temperature for a sufficient time to accomplish the desired process result, and cooling and removing the material. In the interval between presentation of successive samples of the material to the source, the source may be shuttered or idled to reduce energy consumption.

Abstract: A processor apparatus is provided in which a blackbody radiator having a constant planar energy flux characteristic is placed in opposition to semiconductor material. The blackbody source produces a constant planar energy flux to uniformly heat the material. The source is heated to a sufficiently high temperature for a sufficient time to anneal or activate a semiconductor wafer or to epitaxially regrow a thin epitaxial film. The processor is operated by accomplishing the steps of presenting a blackbody radiator in opposition to semiconductor material to be thermally treated, radiatively heating the material to a sufficiently high temperature for a sufficient time to accomplish the desired process result, and cooling and removing the material. In the interval between presentation of successive samples of the material to the source, the source may be shuttered or idled to reduce energy consumption.

Abstract: A processor apparatus is provided in which a blackbody radiator having a constant planar energy flux characteristic is placed in opposition to semiconductor material. The blackbody source produces a constant planar energy flux to uniformly heat the material. The source is heated to a sufficiently high temperature for a sufficient time to anneal or activate a semiconductor wafer or to epitaxially regrow a thin epitaxial film. The processor is operated by accomplishing the steps of presenting a blackbody radiator in opposition to semiconductor material to be thermally treated, radiatively heating the material to a sufficiently high temperature for a sufficient time to accomplish the desired process result, and cooling and removing the material. In the interval between presentation of successive samples of the material to the source, the source may be shuttered or idled to reduce energy consumption.

Abstract: A processor apparatus is provided in which a blackbody radiator having a constant planar energy flux characteristic is placed in opposition to semiconductor material. The blackbody source produces a constant planar energy flux to uniformly heat the material. The source is heated to a sufficiently high temperature for a sufficient time to anneal or activate a semiconductor wafer or to epitaxially regrow a thin epitaxial film. The processor is operated by accomplishing the steps of presenting a blackbody radiator in opposition to semiconductor material to be thermally treated, radiatively heating the material to a sufficiently high temperature for a sufficient time to accomplish the desired process result, and cooling and removing the material. In the interval between presentation of successive samples of the material to the source, the source may be shuttered or idled to reduce energy consumption.

Abstract: Material surfaces are provided which maintain their characteristic properties over long periods and which resist degradation by the environment in which they are utilized. The surfaces are formed by exposing a surface of atomically clean material to a gas or liquid which interacts with the clean surface to form a composition having the properties desired and which is stable against degradation in the environment of use. The process is useful, for example, to render metals or metal alloys, such as iron or iron alloys, stable against oxidation by air by exposing the atomically clean surface to an ultrapure nitrogen environment, prior to exposure to a degrading environment, such as air. A new oxidation-resistant iron surface composition also is provided which comprises body-centered iron structures including nitrogen atoms interstitially.

Abstract: A cloth stuffing chamber or container, preferably a tube with entrance and exit portions, is provided with means for preventing backward movement of the cloth. This means is preferably in the form of a fixed ring at the beginning of the exit portion having around its inner surface at least several segments of wire which are slanted toward the exit portion of the tube. There is provided between the entrance and fixed ring a movable ring with wires or pins also slanting in the same exit direction, which ring is reciprocated by a drive, such as a cam and follower. Cloth is introduced into the entrance portion of the chamber and passes through the two rings, and as the movable ring reciprocates, its slanted wires move the cloth forward on the forward stroke and on the reverse stroke the slanted pins of the fixed ring prevent the cloth from moving backwards.