Patents by Inventor Carl Jackson Stolle

Carl Jackson Stolle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11222989
    Abstract: Methods of making a semiconductor layer from nanocrystals are disclosed. A film of nanocrystals capped with a ligand can be deposited onto a substrate; and the nanocrystals can be irradiated with one or more pulses of light. The pulsed light can be used to substantially remove the ligands from the nanocrystals and leave the nanocrystals unsintered or sintered, thereby providing a semiconductor layer. Layered structures comprising these semiconductor layers with an electrode are also disclosed. Devices comprising such layered structures are also disclosed.
    Type: Grant
    Filed: February 13, 2020
    Date of Patent: January 11, 2022
    Assignee: Board of Regents, The University of Texas System
    Inventors: Brian A. Korgel, Taylor B. Harvey, Carl Jackson Stolle, Vahid Akhavan
  • Publication number: 20200259028
    Abstract: Methods of making a semiconductor layer from nanocrystals are disclosed. A film of nanocrystals capped with a ligand can be deposited onto a substrate; and the nanocrystals can be irradiated with one or more pulses of light. The pulsed light can be used to substantially remove the ligands from the nanocrystals and leave the nanocrystals unsintered or sintered, thereby providing a semiconductor layer. Layered structures comprising these semiconductor layers with an electrode are also disclosed. Devices comprising such layered structures are also disclosed.
    Type: Application
    Filed: February 13, 2020
    Publication date: August 13, 2020
    Inventors: Brian A. Korgel, Taylor B. Harvey, Carl Jackson Stolle, Vahid Akhavan
  • Patent number: 10593821
    Abstract: Methods of making a semiconductor layer from nanocrystals are disclosed. A film of nanocrystals capped with a ligand can be deposited onto a substrate; and the nanocrystals can be irradiated with one or more pulses of light. The pulsed light can be used to substantially remove the ligands from the nanocrystals and leave the nanocrystals unsintered or sintered, thereby providing a semiconductor layer. Layered structures comprising these semiconductor layers with an electrode are also disclosed. Devices comprising such layered structures are also disclosed.
    Type: Grant
    Filed: September 12, 2015
    Date of Patent: March 17, 2020
    Assignee: Board of Regents, The University of Texas System
    Inventors: Brian A. Korgel, Taylor B. Harvey, Carl Jackson Stolle, Vahid Akhavan
  • Publication number: 20170250298
    Abstract: Methods of making a semiconductor layer from nanocrystals are disclosed. A film of nanocrystals capped with a ligand can be deposited onto a substrate; and the nanocrystals can be irradiated with one or more pulses of light. The pulsed light can be used to substantially remove the ligands from the nanocrystals and leave the nanocrystals unsintered or sintered, thereby providing a semiconductor layer. Layered structures comprising these semiconductor layers with an electrode are also disclosed. Devices comprising such layered structures are also disclosed.
    Type: Application
    Filed: September 12, 2015
    Publication date: August 31, 2017
    Inventors: Brian A. Korgel, Taylor B. Harvey, Carl Jackson Stolle, Vahid Akhavan