Abstract: There is a process for manufacturing SiH.sub.4 by the disproportionation or redistribution of HSiCl.sub.3 which comprises feeding HSiCl.sub.3 into a bed of insoluble solid anion exchange resin containing tertiary amino or quaternary ammonium groups bonded to carbon therein, refluxing the HSiCl.sub.3 to vaporize disproportionated products to the upper portion of the bed and condensing liquid SiCl.sub.4 from the area in which HSiCl.sub.3 is refluxed, maintaining the temperature at the top of the bed above the boiling point of SiH.sub.4 and below the boiling point of H.sub.3 SiCl, and recovering SiH.sub.4 from the bed substantially free of chlorosilanes.