Patents by Inventor Carl M. Stahle

Carl M. Stahle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Blocking contacts for N-type cadmium zinc telluride
    Patent number: 8093094
    Abstract: A process for applying blocking contacts on an n-type CdZnTe specimen includes cleaning the CdZnTe specimen; etching the CdZnTe specimen; chemically surface treating the CdZnTe specimen; and depositing blocking metal on at least one of a cathode surface and an anode surface of the CdZnTe specimen.
    Type: Grant
    Filed: June 12, 2008
    Date of Patent: January 10, 2012
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Carl M. Stahle, Bradford H. Parker, Sachidananda R. Babu
  • DETECTOR FOR DUAL BAND ULTRAVIOLET DETECTION
    Publication number: 20110284756
    Abstract: The invention concerns a single detector with two designable wavelengths and bandwidths for ultraviolet detection based on n?/n+-GaN and AlGaN structures grown over sapphire substrates. The detector has several layers grown over a sapphire substrates, including a buffer layer comprising AlN; a first band-edge comprising AlX Ga1-X N; a second band-edge comprising AlYGa1-Y N; a third band-edge comprising AlZ Ga1-Z N. The detector also has ohmic contacts formed on the AlX Ga1-X N band-edge. A bias voltage is applied to the detector through the ohmic contacts so as to select a range of wavelengths in the UV region of interest.
    Type: Application
    Filed: April 22, 2011
    Publication date: November 24, 2011
    Inventors: Laddawan R. Miko, David E. Franz, Carl M. Stahle, Bing Guan, Diane E. Pugel, Shahid Aslam
  • DETECTOR FOR DUAL BAND ULTRAVIOLET DETECTION
    Publication number: 20100012849
    Abstract: The invention concerns a single detector with two designable wavelengths and bandwidths for ultraviolet detection based on n?/n+-GaN and AlGaN structures grown over sapphire substrates. The detector has several layers grown over a sapphire substrates, including a buffer layer comprising AlN; a first band-edge comprising AlXGa1-XN; a second band-edge comprising AlYGa1-YN; a third band-edge comprising AlZGa1-ZN. The detector also has ohmic contacts formed on the AlXGa1-XN band-edge. A bias voltage is applied to the detector through the ohmic contacts so as to select a range of wavelengths in the UV region of interest.
    Type: Application
    Filed: July 21, 2008
    Publication date: January 21, 2010
    Applicant: United States of America as represented by the Administrator of the National Aeronautics and Spac
    Inventors: Laddawan R. Miko, David Franz, Carl M. Stahle, Bing Guan
  • BLOCKING CONTACTS FOR N-TYPE CADMIUM ZINC TELLURIDE
    Publication number: 20090311860
    Abstract: A process for applying blocking contacts on an n-type CdZnTe specimen includes cleaning the CdZnTe specimen; etching the CdZnTe specimen; chemically surface treating the CdZnTe specimen; and depositing blocking metal on at least one of a cathode surface and an anode surface of the CdZnTe specimen.
    Type: Application
    Filed: June 12, 2008
    Publication date: December 17, 2009
    Applicant: USA as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Carl M. Stahle, Bradford H. Parker, Sachidananda R. Babu