Abstract: In one aspect, electroluminescent architectures and devices are described herein. An electroluminescent device, in some embodiments, comprises a first electrode, a second electrode and at least one light emitting layer comprising charge carrier injection structures in contact with an electroluminescent phase in a predetermined spatial distribution, the electroluminescent phase comprising luminescent centers in a semiconductor matrix.

Abstract: In one aspect, light emitting devices are described herein. A light emitting device described herein, in some embodiments, comprises one or more p-type layered assemblies alternating with one or more n-type layered assemblies in a stacked configuration and light emitting active layers disposed between the p-type and the n-type layered assemblies, the light emitting active layers forming junctions with the p-type and the n-type layered assemblies One or more cathodic contacts are in electrical communication with the one or more n-type layered assemblies and one or more anodic contacts are in electrical communication with the one or more p-type layered assemblies.