Abstract: A transistor bias circuit is provided that is capable of biasing an amplifier transistor having a control terminal, a current-sink terminal, and a current-source terminal in order to control inter-modulation and linearize the output corresponding to radio frequency and microwave frequency ranges. Additionally, an embodiment of the present circuit is capable of dynamic power control. The transistor bias circuit according to the present invention utilizes a leakage current to alter the electrical characteristics of the amplifier transistor. The bias circuit comprises a bias transistor having a control terminal, a current-sink terminal, and a current-source terminal. Additionally, at least one DC input port, at least one resonator element, a diode element, and a resistive element is provided.

Abstract: A transistor bias circuit is provided that is capable of biasing an amplifier transistor having a control terminal, a current-sink terminal, and a current-source terminal in order to control inter-modulation and linearize the output corresponding to radio frequency and microwave frequency ranges. Additionally, an embodiment of the present circuit is capable of dynamic power control. The transistor bias circuit according to the present invention utilizes a leakage current to alter the electrical characteristics of the amplifier transistor. The bias circuit comprises a bias transistor having a control terminal, a current-sink terminal, and a current-source terminal. Additionally, at least one DC input port, at least one resonator element, a diode element, and a resistive element is provided.

Abstract: The present invention is generally drawn to a system and method for creating RF integrated microwave circuits that can support multiple applications where many RF functions can be derived from a generic integrated circuit after the RF integrated microwave circuit is manufactured. More specifically, the present invention can provide active and passive device building blocks of respective monolithic microwave integrated circuit (MMIC) arrays and substrates that can be coupled together in various ways after manufacture of the integrated circuits to achieve multiple applications. This can accomplished by manufacturing chips with multiple active device blocks that can support various and multiple applications and that can be coupled together in various ways, adjusted, or tuned after manufacture.

Abstract: The present invention is generally drawn to a system and method for creating RF integrated microwave circuits that can support multiple applications where many RF functions can be derived from a generic integrated circuit after the RF integrated microwave circuit is manufactured. More specifically, the present invention can provide active and passive device building blocks of respective monolithic microwave integrated circuit (MMIC) arrays and substrates that can be coupled together in various ways after manufacture of the integrated circuits to achieve multiple applications. This can accomplished by manufacturing chips with multiple active device blocks that can support various and multiple applications and that can be coupled together in various ways, adjusted, or tuned after manufacture.