Patents by Inventor Carl S. Hellberg

Carl S. Hellberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid phase epitaxy of 3C-SiC on Si(001)
    Patent number: 10686041
    Abstract: A 3C—SiC buffer layer on Si(001) comprising a porous buffer layer of 3C—SiC on a Si(001) substrate, wherein the porous buffer layer is produced through a solid state reaction, and wherein an amorphous carbon layer on the Si(001) substrate is deposited by magnetron sputtering of a C target at room temperature at a rate of 0.8 nm/min.
    Type: Grant
    Filed: April 6, 2017
    Date of Patent: June 16, 2020
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Glenn G. Jernigan, Berend T. Jonker, Ramasis Goswami, Carl S. Hellberg
  • Solid phase epitaxy of 3C-SiC on Si(001)
    Publication number: 20170213891
    Abstract: A 3C—SiC buffer layer on Si(001) comprising a porous buffer layer of 3C—SiC on a Si(001) substrate, wherein the porous buffer layer is produced through a solid state reaction, and wherein an amorphous carbon layer on the Si(001) substrate is deposited by magnetron sputtering of a C target at room temperature at a rate of 0.8 nm/min.
    Type: Application
    Filed: April 6, 2017
    Publication date: July 27, 2017
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Glenn G. Jernigan, Berend T. Jonker, Ramasis Goswami, Carl S. Hellberg
  • Solid phase epitaxy of 3C—SiC on Si(001)
    Patent number: 9673047
    Abstract: A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C—SiC buffer layer on Si(001) comprising a porous buffer layer of 3C—SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: June 6, 2017
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Glenn G. Jernigan, Berend T. Jonker, Ramasis Goswami, Carl S. Hellberg
  • Solid phase epitaxy of 3C-SiC on Si(001)
    Publication number: 20160118465
    Abstract: A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C-SiC buffer layer on Si(001) comprising a porous buffer layer of 3C-SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.
    Type: Application
    Filed: October 1, 2015
    Publication date: April 28, 2016
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Glenn G. Jernigan, Berend T. Jonker, Ramasis Goswami, Carl S. Hellberg