Patents by Inventor Carl Schell

Carl Schell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12166617
    Abstract: Systems and methods for enabling pre-compensation of timing offsets in OFDM receivers without invalidating channel estimates are described. Timing offset estimations may be sent along with the received OFDM symbols for FFT computation and generating a de-rotated signal output. The timing offset estimation may provide a reference point for dynamic tracking of timing for an OFDM signal and estimated based on an integral value associated with the OFDM signal.
    Type: Grant
    Filed: June 27, 2023
    Date of Patent: December 10, 2024
    Assignee: Sirius XM Radio Inc.
    Inventors: Edward Schell, Carl Scarpa
  • Patent number: 8908413
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: December 9, 2014
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Patent number: 8685291
    Abstract: Variable resistance memory compositions and devices exhibiting superior data retention characteristics at elevated temperature. The compositions are composite materials that include a variable resistance component and an inert component. The variable resistance component may include a phase-change material and the inert component may include a dielectric material. The phase-change material may include Ge, Sb, and Te, where the atomic concentration of Sb is between 3% and 16% and/or the Sb/Ge ratio is between 0.07 and 0.68 and/or the Ge/Te ratio is between 0.6 and 1.1 and/or the concentration of dielectric component (expressed as the sum of the atomic concentrations of the constituent elements thereof) is between 5% and 50%. The compositions exhibit high ten-year data retention temperatures and long data retention times at elevated temperatures.
    Type: Grant
    Filed: May 6, 2010
    Date of Patent: April 1, 2014
    Assignee: Ovonyx, Inc.
    Inventors: Carl Schell, Wolodymyr Czubatyj
  • Patent number: 8363446
    Abstract: A method of programming an electrical variable resistance memory device. When applied to variable resistance memory devices that incorporate a phase-change material as the active material, the method utilizes a plurality of crystalline programming states. The crystalline programming states are distinguishable on the basis of resistance, where the resistance values of the different states are stable with time and exhibit little or no drift. As a result, the programming scheme is particularly suited to multilevel memory applications. The crystalline programming states may be achieved by stabilizing crystalline phases that adopt different crystallographic structures or by stabilizing crystalline phases that include mixtures of two or more distinct crystallographic structures that vary in the relative proportions of the different crystallographic structures.
    Type: Grant
    Filed: October 14, 2009
    Date of Patent: January 29, 2013
    Assignee: Ovonyx, Inc.
    Inventors: Wolodymyr Czubatyj, Tyler Lowrey, Charles Dennison, Carl Schell
  • Patent number: 8217379
    Abstract: A variable resistance material for memory applications. The material includes a base Ge—Sb—Te composition and further includes As-doping. The materials were included in variable resistance memory devices. Incorporation of As in the variable resistance composition led to a significant increase in the operational life of the device and, unexpectedly, did not reduce the programming speed of the device. In one embodiment, the composition includes at atomic concentration of Ge in the range from 7%-13%, an atomic concentration of Sb in the range from 50%-70%, an atomic concentration of Te in the range from 20%-30%, and an atomic concentration of As in the range from 2%-15%.
    Type: Grant
    Filed: July 20, 2009
    Date of Patent: July 10, 2012
    Assignee: Ovonyx, Inc.
    Inventors: Carl Schell, Guy Wicker, Jon Maimon
  • Publication number: 20110305075
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Application
    Filed: August 24, 2011
    Publication date: December 15, 2011
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Patent number: 8062921
    Abstract: A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
    Type: Grant
    Filed: February 3, 2009
    Date of Patent: November 22, 2011
    Assignee: Intel Corporation
    Inventors: Guy C. Wicker, Carl Schell, Sergey A. Kostylev, Stephen J. Hudgens
  • Patent number: 8009455
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Grant
    Filed: January 20, 2009
    Date of Patent: August 30, 2011
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Publication number: 20110084240
    Abstract: Variable resistance memory compositions and devices exhibiting superior data retention characteristics at elevated temperature. The compositions are composite materials that include a variable resistance component and an inert component. The variable resistance component may include a phase-change material and the inert component may include a dielectric material. The phase-change material may include Ge, Sb, and Te, where the atomic concentration of Sb is between 3% and 16% and/or the Sb/Ge ratio is between 0.07 and 0.68 and/or the Ge/Te ratio is between 0.6 and 1.1 and/or the concentration of dielectric component (expressed as the sum of the atomic concentrations of the constituent elements thereof) is between 5% and 50%. The compositions exhibit high ten-year data retention temperatures and long data retention times at elevated temperatures.
    Type: Application
    Filed: May 6, 2010
    Publication date: April 14, 2011
    Inventors: Carl Schell, Wolodymyr Czubatyj
  • Publication number: 20110012080
    Abstract: A variable resistance material for memory applications. The material includes a base Ge—Sb—Te composition and further includes As-doping. The materials were included in variable resistance memory devices. Incorporation of As in the variable resistance composition led to a significant increase in the operational life of the device and, unexpectedly, did not reduce the programming speed of the device. In one embodiment, the composition includes at atomic concentration of Ge in the range from 7%-13%, an atomic concentration of Sb in the range from 50%-70%, an atomic concentration of Te in the range from 20%-30%, and an atomic concentration of As in the range from 2%-15%.
    Type: Application
    Filed: July 20, 2009
    Publication date: January 20, 2011
    Inventors: Carl Schell, Guy Wicker, Jon Maimon
  • Publication number: 20100182825
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Application
    Filed: January 20, 2009
    Publication date: July 22, 2010
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Publication number: 20100027328
    Abstract: A method of programming an electrical variable resistance memory device. When applied to variable resistance memory devices that incorporate a phase-change material as the active material, the method utilizes a plurality of crystalline programming states. The crystalline programming states are distinguishable on the basis of resistance, where the resistance values of the different states are stable with time and exhibit little or no drift. As a result, the programming scheme is particularly suited to multilevel memory applications. The crystalline programming states may be achieved by stabilizing crystalline phases that adopt different crystallographic structures or by stabilizing crystalline phases that include mixtures of two or more distinct crystallographic structures that vary in the relative proportions of the different crystallographic structures.
    Type: Application
    Filed: October 14, 2009
    Publication date: February 4, 2010
    Inventors: Wolodymyr Czubatyj, Tyler Lowrey, Charles Dennison, Carl Schell
  • Publication number: 20090298222
    Abstract: A method of chalcogenide device formation includes treatment of the surface upon which the chalcogenide material is deposited. The treatment reduces or eliminates native oxides and other contaminants from the surface, thereby increasing the adhesion of the chalcogenide layer to the treated surface, eliminating voids between the chalcogenide layer and deposition surface and reducing the degradation of chalcogenide material due to the migration of contaminants into the chalcogenide.
    Type: Application
    Filed: May 28, 2008
    Publication date: December 3, 2009
    Inventors: Tyler Lowrey, Jeff Fournier, Robert Nuss, Carl Schell, Guy Wicker, Jim Ricker, James Reed, Ed Spall, Sergey Kostylev, Wolodymyr Czubatyj, Regino Sandoval
  • Publication number: 20090142882
    Abstract: A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
    Type: Application
    Filed: February 3, 2009
    Publication date: June 4, 2009
    Inventors: Guy C. Wicker, Carl Schell, Sergey A. Kostylev, Stephen J. Hudgens
  • Patent number: 7504675
    Abstract: A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
    Type: Grant
    Filed: February 22, 2007
    Date of Patent: March 17, 2009
    Assignee: Intel Corporation
    Inventors: Guy C. Wicker, Carl Schell, Sergey A. Kostylev, Stephen J. Hudgens
  • Publication number: 20080203376
    Abstract: A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
    Type: Application
    Filed: February 22, 2007
    Publication date: August 28, 2008
    Inventors: Guy C. Wicker, Carl Schell, Sergey A. Kostylev, Stephen J. Hudgens
  • Publication number: 20070243808
    Abstract: A sensor system (24) for controlling a ventilation unit (22) of a vehicle (20) includes a sensitivity selector (70) for enabling a user to select a setting (76) corresponding to an air quality threshold (94, 98), and an air quality sensor (62) proximate an exterior of the vehicle (20) for detecting an air quality parameter (71). A controller (66) is responsive to the selector (70) and the sensor (62), and is in communication with an inlet air valve (32) of the ventilation unit (22). A method (118) of operating the sensor system (24) entails receiving a current value of the air quality parameter (71) at the controller (66) for comparison with the air quality threshold (94, 98). The controller (66) generates a switch signal (74) in response to the comparison for adjusting the inlet air valve (32) between an outside air mode (44) and a recirculation mode (46).
    Type: Application
    Filed: March 21, 2006
    Publication date: October 18, 2007
    Inventors: Gursaran Mathur, Carl Schell