Abstract: A MEMS actuator includes a semiconductor body with a first surface defining a housing cavity facing the first surface and having a bottom surface, the semiconductor body further defining a fluidic channel in the semiconductor body with a first end across the bottom surface. A strainable structure extends into the housing cavity, is coupled to the semiconductor body at the bottom surface, and defines an internal space facing the first end of the fluidic channel and includes at least a first and a second internal subspace connected to each other and to the fluidic channel. When a fluid is pumped through the fluidic channel into the internal space, the first and second internal subspaces expand, thereby straining the strainable structure along the first axis and generating an actuation force exerted by the strainable structure along the first axis, in an opposite direction with respect to the housing cavity.

Abstract: The MEMS actuator is formed by a substrate, which surrounds a cavity; by a deformable structure suspended on the cavity; by an actuation structure formed by a first piezoelectric region of a first piezoelectric material, supported by the deformable structure and configured to cause a deformation of the deformable structure; and by a detection structure formed by a second piezoelectric region of a second piezoelectric material, supported by the deformable structure and configured to detect the deformation of the deformable structure.

Abstract: A piezoelectric transducer includes a semiconductor body with a bottom electrode of conductive material. A piezoelectric element is on the bottom electrode. A first protective layer, on the bottom electrode and the piezoelectric element, has a first opening through which a portion of the piezoelectric element is exposed, and a second opening through which a portion of the bottom electrode is exposed. A conductive layer on the first protective layer and within the first and second openings is patterned to form a top electrode in electrical contact with the piezoelectric element at the first opening, a first biasing stripe in electrical contact with the top electrode, and a second biasing stripe in electrical contact with the bottom electrode at the second opening.

Abstract: The MEMS actuator is formed by a substrate, which surrounds a cavity; by a deformable structure suspended on the cavity; by an actuation structure formed by a first piezoelectric region of a first piezoelectric material, supported by the deformable structure and configured to cause a deformation of the deformable structure; and by a detection structure formed by a second piezoelectric region of a second piezoelectric material, supported by the deformable structure and configured to detect the deformation of the deformable structure.

Abstract: A piezoelectric transducer includes a semiconductor body with a bottom electrode of conductive material. A piezoelectric element is on the bottom electrode. A first protective layer, on the bottom electrode and the piezoelectric element, has a first opening through which a portion of the piezoelectric element is exposed, and a second opening through which a portion of the bottom electrode is exposed. A conductive layer on the first protective layer and within the first and second openings is patterned to form a top electrode in electrical contact with the piezoelectric element at the first opening, a first biasing stripe in electrical contact with the top electrode, and a second biasing stripe in electrical contact with the bottom electrode at the second opening.

Abstract: An isolation structure, such as a trench isolation structure, may be formed by forming an aperture in a semiconductor substrate and then filling the aperture with boron. In some embodiments, the aperture filling may use atomic layer deposition. In some cases, the boron may be amorphous boron. The aperture may be a high aspect ratio aperture, such as a trench, in some embodiments.

Abstract: A method of forming a metal silicide region. The method comprises forming a metal material over and in contact with exposed surfaces of a dielectric material and silicon structures protruding from the dielectric material. A capping material is formed over and in contact with the metal material. The silicon structures are exposed to heat to effectuate a multidirectional diffusion of the metal material into the silicon structures to form a first metal silicide material. The capping material and unreacted portions of the metal material are removed. The silicon structures are exposed to heat to substantially convert the first metal silicide material into a second metal silicide material. A method of semiconductor device fabrication, an array of silicon structures, and a semiconductor device structure are also described.

Abstract: A heater for a phase change memory may be thrilled by depositing a first material into a trench such that the material is thicker on the side wall than on the bottom of the trench. In one embodiment, because the trench side walls are of a different material than the bottom, differential deposition occurs. Then a heater material is deposited thereover. The heater material may react with the first material at the bottom of the trench to make Ohmic contact with an underlying metal layer. As a result, a vertical heater may be formed which is capable of making a small area contact with an overlying chalcogenide material.

Abstract: A heater for a phase change memory may be formed by depositing a first material into a trench such that the material is thicker on the side wall than on the bottom of the trench. In one embodiment, because the trench side walls are of a different material than the bottom, differential deposition occurs. Then a heater material is deposited thereover. The heater material may react with the first material at the bottom of the trench to make Ohmic contact with an underlying metal layer. As a result, a vertical heater may be formed which is capable of making a small area contact with an overlying chalcogenide material.

Abstract: An isolation structure, such as a trench isolation structure, may be formed by forming an aperture in a semiconductor substrate and then filling the aperture with boron. In some embodiments, the aperture filling may use atomic layer deposition. In some cases, the boron may be amorphous boron. The aperture may be a high aspect ratio aperture, such as a trench, in some embodiments.

Abstract: A heater for a phase change memory may be formed by depositing a first material into a trench such that the material is thicker on the side wall than on the bottom of the trench. In one embodiment, because the trench side walls are of a different material than the bottom, differential deposition occurs. Then a heater material is deposited thereover. The heater material may react with the first material at the bottom of the trench to make Ohmic contact with an underlying metal layer. As a result, a vertical heater may be formed which is capable of making a small area contact with an overlying chalcogenide material.