Abstract: Improved high quality gate dielectrics and methods of preparing such dielectrics are provided. Preferred dielectrics comprise a rare earth doped dielectric such as silicon dioxide or silicon oxynitride. In particular, cerium doped silicon dioxide shows an unexpectedly high charge-to-breakdown QBD, believed to be due to conversion of excess hot electron energy as photons, which reduces deleterious hot electron effects such as creation of traps or other damage. Rare earth doped dielectrics therefore have particular application as gate dielectrics or gate insulators for semiconductor devices such as floating gate MOSFETs, as used in as flash memories, which rely on electron injection and charge transfer and storage.

Abstract: Electroluminescent (EL) light emitting structures comprises one or more active layers comprising rare earth luminescent centers in a host matrix for emitting light of a particular color or wavelength and electrodes for application of an electric field and current injection for excitation of light emission. The host matrix is preferably a dielectric containing the rare earth luminescent centers, e.g. rare earth doped silicon dioxide, silicon nitride, silicon oxynitrides, alumina, dielectrics of the general formula SiaAlbOcNd, or rare earth oxides. For efficient impact excitation, corresponding drift layers adjacent each active layer have a thickness related to a respective excitation energy of an adjacent active layer. A stack of active layers emitting different colors may be combined to provide white light. For rare earth species having a host dependent emission spectrum, spectral emission of the stack may be tuned by appropriate selection of a different host matrix in successive active layers.

Abstract: Improved high quality gate dielectrics and methods of preparing such dielectrics are provided. Preferred dielectrics comprise a rare earth doped dielectric such as silicon dioxide or silicon oxynitride. In particular, cerium doped silicon dioxide shows an unexpectedly high charge-to-breakdown QBD, believed to be due to conversion of excess hot electron energy as photons, which reduces deleterious hot electron effects such as creation of traps or other damage. Rare earth doped dielectrics therefore have particular application as gate dielectrics or gate insulators for semiconductor devices such as floating gate MOSFETs, as used in as flash memories, which rely on electron injection and charge transfer and storage.

Abstract: The present invention replaces conventional lighting devices, such as incandescent lamps, fluorescent lamps, and LED lamps, with an integrated electro-luminescent film structure, subdivided into electrically isolated micro-panels. Ideally, the electro-luminescent structure comprises separate red, green and blue micro-panels providing a full range of color adjustment. Alternatively, the electro-luminescent film structure includes stacked groups of layers, in which each group emits a different color and is independently controllable.

Abstract: Electroluminescent (EL) light emitting structures comprises one or more active layers comprising rare earth luminescent centres in a host matrix for emitting light of a particular colour or wavelength and electrodes for application of an electric field and current injection for excitation of light emission. The host matrix is preferably a dielectric containing the rare earth luminescent centres, e.g. rare earth doped silicon dioxide, silicon nitride, silicon oxynitrides, alumina, dielectrics of the general formula SiaAlbOcNd, or rare earth oxides. For efficient impact excitation, corresponding drift layers adjacent each active layer have a thickness related to a respective excitation energy of an adjacent active layer. A stack of active layers emitting different colours may be combined to provide white light. For rare earth species having a host dependent emission spectrum, spectral emission of the stack may be tuned by appropriate selection of a different host matrix in successive active layers.

Abstract: The present invention replaces the conventional cold cathode fluorescent tubes used in backlighting units of liquid crystal displays with an integrated electro-luminescent film structure, subdivided into electrically isolated micro-panels. Ideally, the electro-luminescent structure comprises separate red, green and blue micro-panels providing full color capabilities. Alternatively, the electro-luminescent film structure includes stacked groups of layers, in which each group emits a different color and is independently controllable.

Abstract: The present invention replaces the conventional cold cathode fluorescent tubes used in backlighting units of liquid crystal displays with an integrated electro-luminescent film structure, subdivided into electrically isolated micro-panels. Ideally, the electro-luminescent structure comprises separate red, green and blue micro-panels providing full color capabilities. Alternatively, the electro-luminescent film structure includes stacked groups of layers, in which each group emits a different color and is independently controllable.

Abstract: The present invention replaces the conventional cold cathode fluorescent tubes used in backlighting units of liquid crystal displays with an integrated electro-luminescent film structure, subdivided into electrically isolated micro-panels. Ideally, the electro-luminescent structure comprises separate red, green and blue micro-panels providing full color capabilities. Alternatively, the electro-luminescent film structure includes stacked groups of layers, in which each group emits a different color and is independently controllable.

Abstract: A periodically poled second harmonic generating crystal having a long axis, said crystal comprising Magnesium Oxide doped Congruent Lithium Niobate, Magnesium Oxide doped Stoichiometric Lithium Niobate, Stoichiometric Lithium Tantalate or Potassium Titanyl Phosphate wherein the poling planes of said periodically poled crystal are canted relative to said axis and a doubled, external cavity laser utilizing said crystal, comprising an external cavity pump laser section and an extra-cavity frequency doubling section.

Abstract: A thermal treatment process for improving the resistance of a flux grown, periodically poled KTiOPO4 crystal to photorefractive or photochromic damage comprising the steps of: i) heating said crystal from ambient temperature up to an annealing temperature in the range of from about 200° C. to about 400° C.; ii) maintaining said crystal at said annealing temperature in an oxygen containing atmosphere; iii) allowing said crystal to slowly cool down from said annealing temperature to ambient temperature.

Abstract: A thermal treatment process for improving the resistance of a flux grown, periodically poled KTiOPO4 crystal to photorefractive or photochromic damage comprising the steps of: i) heating said crystal from ambient temperature up to an annealing temperature in the range of from about 200° C. to about 400° C.; ii) maintaining said crystal at said annealing temperature in an oxygen containing atmosphere; iii) allowing said crystal to slowly cool down from said annealing temperature to ambient temperature.