Abstract: The present invention relates to an electronic device, comprising: —a GFET; —noise suppression means comprising: —a modulation unit applying to a gate (G) of the GFET a signal Vg with frequency fm to modulate charge carrier density of a graphene channel around the charge neutrality point between charge carrier density values at frequency fm, —a control unit (CU), and—a demodulation circuit which is CMOS-implemented and that: —comprises first and second circuital branches alternately switchable to demodulate an electrical signal of frequency fm; or—is configured to generate and apply a signal Vb with frequency fmb to a source (S) of the GFET continuously, simultaneously and with a delay td to induce a phase with respect to Vg to yield a maximal demodulated output signal (So). The present invention also concerns to a method for suppressing noise for the device of the invention.

Abstract: The present invention relates to an electronic device, comprising: —a GFET; —noise suppression means comprising: —a modulation unit applying to a gate (G) of the GFET a signal Vg with frequency fm to modulate charge carrier density of a graphene channel around the charge neutrality point between charge carrier density values at frequency fm, —a control unit (CU), and —a demodulation circuit which is CMOS-implemented and that: —comprises first and second circuital branches alternately switchable to demodulate an electrical signal of frequency fm; or —is configured to generate and apply a signal Vb with frequency fmb to a source (S) of the GFET continuously, simultaneously and with a delay td to induce a phase with respect to Vg to yield a maximal demodulated output signal (So). The present invention also concerns to a method for suppressing noise for the device of the invention.