Abstract: A magnetic field sensor array includes a plurality of sensor segments, each including a plurality of magnetic field sensors. A magnetizing current conductor is situated so as to run in the area of the magnetic field sensors in such a way that elements of the magnetic field sensors may be magnetized. A plurality of parallel-connected half-bridges, each including a high switch pJ and a low switch nJ, each include a center tap connection situated between the switches. The magnetizing current conductor is connected to each center tap connection, by means of which the magnetizing current conductor is divided into separately activatable magnetizing segments. Elements of a sensor segment are magnetized in that two switches nJ and pJ+1 having different electrical potentials, or alternatively pJ and nJ+1, of two directly adjacent half-bridges are closed simultaneously. At least one further switch nX<J or pY>J+1 or alternatively pX<J or nY>J+1 is closed.

Abstract: A magnetic field sensor array includes a plurality of sensor segments, each including a plurality of magnetic field sensors. A magnetizing current conductor is situated so as to run in the area of the magnetic field sensors in such a way that elements of the magnetic field sensors may be magnetized. A plurality of parallel-connected half-bridges, each including a high switch pJ and a low switch nJ, each include a center tap connection situated between the switches. The magnetizing current conductor is connected to each center tap connection, by means of which the magnetizing current conductor is divided into separately activatable magnetizing segments. Elements of a sensor segment are magnetized in that two switches nJ and pJ+1 having different electrical potentials, or alternatively pJ and nJ+1, of two directly adjacent half-bridges are closed simultaneously. At least one further switch nX<J or pY>J+1 or alternatively pX<j or nY>J+1 is closed.

Abstract: A reading circuit for a magnetic-field sensor, provided with a detection structure generating an electrical detection signal as a function of an external magnetic field, has a signal-conditioning stage, which is electrically coupled to the detection structure and generates an output signal as a function of the electrical detection signal; the reading circuit is provided with a full-scale-control stage that is able to select automatically a full-scale value for the signal-conditioning stage, as a function of the value of the external magnetic field, such as to prevent saturation of the same conditioning stage.

Abstract: A method reading a magnetic-field sensor provided with at least one first magnetoresistive element envisages generation of an output signal, indicative of a magnetic field, as a function of a detection signal supplied by the magnetic-field sensor. The reading method envisages: determining an offset signal present in the output signal; generating at least one compensation quantity as a function of the offset signal; and feeding back the compensation quantity at input to the reading stage so as to apply a corrective factor at input to the reading stage as a function of the compensation quantity, such as to reduce the value of the offset signal below a given threshold.

Abstract: Various embodiments of the invention provide for cancellation of unwanted signals in switched-capacitor circuits. In certain embodiments cancellation this is accomplished by performing a multi-phase CDS technique. The technique comprises resetting capacitive elements in the feedback path of an operational amplifier during a reset interval, maintaining a decoupled condition during a sampling interval in which the unwanted signals are sampled, and cancelling unwanted signals in a sensing interval.

Abstract: A reading circuit for a magnetic-field sensor, generating an electrical detection quantity as a function of a detected magnetic field and of a detection sensitivity, is provided with an amplification stage, which is coupled to the magnetic-field sensor and generates an output signal as a function of the electrical detection quantity. In particular, the reading circuit is provided with a calibration stage, integrated with the amplification stage and configured so as to control a feedback loop in such a way as to compensate a variation of the detection sensitivity with respect to a nominal sensitivity value.

Abstract: Described herein is a biasing circuit for a magnetic-field sensor; the magnetic-field sensor is provided with a first detection structure, which generates a first electrical detection quantity as a function of a first component of an external magnetic field, and a second detection structure, which generates a second electrical detection quantity as a function of a second component of an external magnetic field. The biasing circuit electrically supplies the first detection structure and the second detection structure in respective biasing time intervals, at least partially distinct from one another, which preferably do not temporally overlap one other.

Abstract: A reading circuit for a magnetic-field sensor, generating an electrical detection quantity as a function of a detected magnetic field and of a detection sensitivity, is provided with an amplification stage, which is coupled to the magnetic-field sensor and generates an output signal as a function of the electrical detection quantity. In particular, the reading circuit is provided with a calibration stage, integrated with the amplification stage and configured so as to control a feedback loop in such a way as to compensate a variation of the detection sensitivity with respect to a nominal sensitivity value.

Abstract: A reading circuit for a magnetic-field sensor, generating an electrical detection quantity as a function of a detected magnetic field and of a detection sensitivity, is provided with an amplification stage, which is coupled to the magnetic-field sensor and generates an output signal as a function of the electrical detection quantity and of an amplification gain. In particular, the amplification gain is electronically selectable, and the reading circuit is moreover provided with a calibration stage, integrated with the amplification stage and configured so as to vary a value of the amplification gain in such a way as to compensate a variation of the detection sensitivity with respect to a nominal sensitivity value.

Abstract: Described herein is a biasing circuit for a magnetic-field sensor; the magnetic-field sensor is provided with a first detection structure, which generates a first electrical detection quantity as a function of a first component of an external magnetic field, and a second detection structure, which generates a second electrical detection quantity as a function of a second component of an external magnetic field. The biasing circuit electrically supplies the first detection structure and the second detection structure in respective biasing time intervals, at least partially distinct from one another, which preferably do not temporally overlap one other.

Abstract: A reading circuit for a magnetic-field sensor, generating an electrical detection quantity as a function of a detected magnetic field and of a detection sensitivity, is provided with an amplification stage, which is coupled to the magnetic-field sensor and generates an output signal as a function of the electrical detection quantity and of an amplification gain. In particular, the amplification gain is electronically selectable, and the reading circuit is moreover provided with a calibration stage, integrated with the amplification stage and configured so as to vary a value of the amplification gain in such a way as to compensate a variation of the detection sensitivity with respect to a nominal sensitivity value.

Abstract: Described herein is a biasing circuit for a magnetic-field sensor; the magnetic-field sensor is provided with a first detection structure, which generates a first electrical detection quantity as a function of a first component of an external magnetic field, and a second detection structure, which generates a second electrical detection quantity as a function of a second component of an external magnetic field. The biasing circuit electrically supplies the first detection structure and the second detection structure in respective biasing time intervals, at least partially distinct from one another, which preferably do not temporally overlap one other.

Abstract: A reading circuit for a magnetic-field sensor, generating an electrical detection quantity as a function of a detected magnetic field and of a detection sensitivity, is provided with an amplification stage, which is coupled to the magnetic-field sensor and generates an output signal as a function of the electrical detection quantity and of an amplification gain. In particular, the amplification gain is electronically selectable, and the reading circuit is moreover provided with a calibration stage, integrated with the amplification stage and configured so as to vary a value of the amplification gain in such a way as to compensate a variation of the detection sensitivity with respect to a nominal sensitivity value.

Abstract: A magnetic-field sensor adapted to detect an external magnetic field. The magnetic-field sensor including a first chip, having a first magnetoresistive structure for detection of the external magnetic field, the first magnetoresistive detection structure including an electrical-contact pad and magnetoresistive element, and a second chip housing an integrated electronic circuit and a magnetic-field generator. The first and second chips being mutually arranged in such a way that the integrated electronic circuit can be electrically coupled to the electrical-contact pad of the magnetoresistive structure and in such a way that the magnetic-field generator can be magnetically coupled to the magnetoresistive structure.

Abstract: A semiconductor device wherein a delay chain is integrated; the semiconductor device having a semiconductor layer. The delay chain includes a plurality of delay cells placed in the semiconductor layer and electrically connected to each other so as to form the delay chain. The semiconductor device includes a first and second metal lines respectively connected to a supply voltage and a reference voltage and placed in a longitudinal direction on a surface of the semiconductor layer; each delay cell of the plurality of cells is electrically connected with the first and second metal lines. Any delay cell and its successive or preceding delay cells of the delay chain are placed in a transversal direction with respect to the first or the second metal line.

Abstract: A magnetic-field sensor adapted to detect an external magnetic field, comprising: a first chip, including a first magnetoresistive structure for detection of the external magnetic field, the first magnetoresistive detection structure including an electrical-contact pad and magnetoresistive means; and a second chip housing an integrated electronic circuit and a magnetic-field generator, the first and second chips being mutually arranged in such a way that the integrated electronic circuit can be electrically coupled to the electrical-contact pad of the magnetoresistive structure and in such a way that the magnetic-field generator can be magnetically coupled to the magnetoresistive structure.

Abstract: A method for reading a magnetic-field sensor provided with at least one first magnetoresistive element envisages generation of an output signal, indicative of a magnetic field, as a function of a detection signal supplied by the magnetic-field sensor. The reading method envisages: determining an offset signal present in the output signal; generating at least one compensation quantity as a function of the offset signal; and feeding back the compensation quantity at input to the reading stage so as to apply a corrective factor at input to the reading stage as a function of the compensation quantity, such as to reduce the value of the offset signal below a given threshold.

Abstract: A reading circuit for a magnetic-field sensor, generating an electrical detection quantity as a function of a detected magnetic field and of a detection sensitivity, is provided with an amplification stage, which is coupled to the magnetic-field sensor and generates an output signal as a function of the electrical detection quantity and of an amplification gain. In particular, the amplification gain is electronically selectable, and the reading circuit is moreover provided with a calibration stage, integrated with the amplification stage and configured so as to vary a value of the amplification gain in such a way as to compensate a variation of the detection sensitivity with respect to a nominal sensitivity value.

Abstract: Described herein is a biasing circuit for a magnetic-field sensor; the magnetic-field sensor is provided with a first detection structure, which generates a first electrical detection quantity as a function of a first component of an external magnetic field, and a second detection structure, which generates a second electrical detection quantity as a function of a second component of an external magnetic field. The biasing circuit electrically supplies the first detection structure and the second detection structure in respective biasing time intervals, at least partially distinct from one another, which preferably do not temporally overlap one other.

Abstract: A reading circuit for a magnetic-field sensor, provided with a detection structure generating an electrical detection signal as a function of an external magnetic field, has a signal-conditioning stage, which is electrically coupled to the detection structure and generates an output signal as a function of the electrical detection signal; the reading circuit is provided with a full-scale-control stage that is able to select automatically a full-scale value for the signal-conditioning stage, as a function of the value of the external magnetic field, such as to prevent saturation of the same conditioning stage.