Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.

Abstract: A memory has an array of k-level cells, organized into pages of words, each storing a string of bits. The memory device includes a coding circuit input with strings of N bits, and generates corresponding k-level strings. A program circuit is input with the k-level strings to stores in groups of c cells with k levels. A read circuit reads data stored in groups of c cells with k levels and generates k-level strings. A read decoding circuit is input with k-level strings read from groups of c cells with k levels to generate strings of N bits. The words of each page are grouped in groups of words, each word including groups of c cells with k levels, and at least one remaining bit of the word being stored, with corresponding remaining bits of other words of the page, in a group of c cells with k levels.

Abstract: A method programs a memory cell comprising: an initial phase in which a continuous voltage is applied to a drain terminal of said memory cell and a suitable programming voltage signal is applied to a gate terminal thereof; a regulation phase in which a constant voltage value is applied to said gate terminal and a voltage value of said drain terminal is regulated so as to be maintained at a fixed value until a threshold voltage value of said memory cell is set at a desired threshold voltage level; and a disable phase that stops said programming and is triggered as soon as a programming current value of said memory cell goes below a reference current value, said reference current value corresponding to the attainment by the threshold voltage value of said memory cell of the desired threshold voltage value. A programming circuit is suitable for implementing this method.

Abstract: A memory has an array of k-level cells, organized into pages of words, each storing a string of bits. The memory device includes a coding circuit input with strings of N bits, and generates corresponding k-level strings. A program circuit is input with the k-level strings to stores in groups of c cells with k levels. A read circuit reads data stored in groups of c cells with k levels and generates k-level strings. A read decoding circuit is input with k-level strings read from groups of c cells with k levels to generate strings of N bits. The words of each page are grouped in groups of words, each word including groups of c cells with k levels, and at least one remaining bit of the word being stored, with corresponding remaining bits of other words of the page, in a group of c cells with k levels.

Abstract: A method programs a memory cell comprising: an initial phase in which a continuous voltage is applied to a drain terminal of said memory cell and a suitable programming voltage signal is applied to a gate terminal thereof; a regulation phase in which a constant voltage value is applied to said gate terminal and a voltage value of said drain terminal is regulated so as to be maintained at a fixed value until a threshold voltage value of said memory cell is set at a desired threshold voltage level; and a disable phase that stops said programming and is triggered as soon as a programming current value of said memory cell goes below a reference current value, said reference current value corresponding to the attainment by the threshold voltage value of said memory cell of the desired threshold voltage value. A programming circuit is suitable for implementing this method.