Patents by Inventor Carlo Magro

Carlo Magro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9324803
    Abstract: A method for manufacturing a semiconductor power device, comprising the steps of: forming a trench in a semiconductor body having a first type of conductivity; partially filling the trench with semiconductor material via epitaxial growth so as to obtain a first column having a second type of conductivity and having an internal cavity. The epitaxial growth includes simultaneously supplying a gas containing dopant ions of the second type of conductivity, hydrochloric acid HCl in gaseous form and dichlorosilane DCS in gaseous form, so that the ratio between the amount of HCl and the amount of DCS has a value of from 3.5 to 5.5.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: April 26, 2016
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Giuseppe Morale, Carlo Magro, Domenico Murabito, Tiziana Cuscani
  • Patent number: 9018730
    Abstract: A galvanic-isolated coupling of circuit portions is accomplished on the basis of a stacked chip configuration. The semiconductor chips thus can be fabricated on the basis of any appropriate process technology, thereby incorporating one or more coupling elements, such as primary or secondary coils of a micro transformer, wherein the final characteristics of the micro transformer are adjusted during the wafer bond process.
    Type: Grant
    Filed: April 3, 2012
    Date of Patent: April 28, 2015
    Assignee: STMicroelectronics S.r.l.
    Inventors: Crocifisso Marco Antonio Renna, Antonino Scuderi, Carlo Magro, Nunzio Spina, Egidio Ragonese, Barbaro Marano, Giuseppe Palmisano
  • Publication number: 20140346588
    Abstract: A method for manufacturing a semiconductor power device, comprising the steps of: forming a trench in a semiconductor body having a first type of conductivity; partially filling the trench with semiconductor material via epitaxial growth so as to obtain a first column having a second type of conductivity and having an internal cavity. The epitaxial growth includes simultaneously supplying a gas containing dopant ions of the second type of conductivity, hydrochloric acid HCl in gaseous form and dichlorosilane DCS in gaseous form, so that the ratio between the amount of HCl and the amount of DCS has a value of from 3.5 to 5.5.
    Type: Application
    Filed: May 20, 2014
    Publication date: November 27, 2014
    Applicant: STMICROELECTRONICS S.r.l.
    Inventors: Giuseppe MORALE, Carlo MAGRO, Domenico MURABITO, Tiziana CUSCANI
  • Publication number: 20120256290
    Abstract: A galvanic-isolated coupling of circuit portions is accomplished on the basis of a stacked chip configuration. The semiconductor chips thus can be fabricated on the basis of any appropriate process technology, thereby incorporating one or more coupling elements, such as primary or secondary coils of a micro transformer, wherein the final characteristics of the micro transformer are adjusted during the wafer bond process.
    Type: Application
    Filed: April 3, 2012
    Publication date: October 11, 2012
    Applicant: STMICROELECTRONICS S.R.L.
    Inventors: Crocifisso Marco Antonio Renna, Antonino Scuderi, Carlo Magro, Nunzio Spina, Egidio Ragonese, Barbaro Marano, Giuseppe Palmisano