Patents by Inventor Carlo Waldfried

Carlo Waldfried has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10497598
    Abstract: An electrostatic chuck includes a ceramic structural element, at least one electrode disposed on the ceramic structural element, and a surface dielectric layer disposed over the at least one electrode, the surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck. The surface dielectric layer comprises: (i) an insulator layer of amorphous alumina, of a thickness of less than about 5 microns, disposed over the at least one electrode; and (ii) a stack of dielectric layers disposed over the insulator layer. The stack of dielectric layers includes: (a) at least one dielectric layer including aluminum oxynitride; and (b) at least one dielectric layer including at least one of silicon oxide and silicon oxynitride.
    Type: Grant
    Filed: February 6, 2015
    Date of Patent: December 3, 2019
    Assignee: ENTEGRIS, INC.
    Inventors: Richard A. Cooke, Wolfram Neff, Carlo Waldfried, Jakub Rybczynski, Michael Hanagan, Wade Krull
  • Publication number: 20190185997
    Abstract: Described are multi-layer coatings, substrates (i.e., articles) coated with a multi-layer coating, and methods of preparing a multi-layer coating by atomic layer deposition, wherein the coating includes layers alumina and yttria.
    Type: Application
    Filed: December 18, 2018
    Publication date: June 20, 2019
    Inventors: I-Kuan LIN, Chandrasekaran VENKATRAMAN, Carlo WALDFRIED
  • Publication number: 20190100842
    Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that deleterious to the substrate article, structure material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.
    Type: Application
    Filed: September 6, 2018
    Publication date: April 4, 2019
    Inventors: Bryan C. Hendrix, David W. Peters, Weimin Li, Carlo Waldfried, Richard A. Cooke, Nilesh Gunda, I-Kuan Lin
  • Publication number: 20190084862
    Abstract: Described are glass-forming molds made of a graphite mold body and a coating formed by atomic layer deposition, with the coating being made of alumina or a combination of alumina and yttria.
    Type: Application
    Filed: September 21, 2018
    Publication date: March 21, 2019
    Inventors: Troy SCOGGINS, Rex Gerald Sheppard, Carlo Waldfried
  • Publication number: 20190067069
    Abstract: An electrostatic chuck with a generally non-arcuate top surface shaped protrusions that has edge surfaces similar to a portion of a ellipse. The structure of the protrusions leads to the reduction of particulate material generated by interaction between the supported substrate and chuck. Reduced levels of scratching, abrasion, wear and particulate generation are achieved by improved smoothing and flattening of the protrusion surface.
    Type: Application
    Filed: February 2, 2017
    Publication date: February 28, 2019
    Inventors: John Michael Glasko, I-Kuan Lin, Carlo Waldfried
  • Publication number: 20180202047
    Abstract: Articles and methods relating to coatings having superior chemical resistance and structural integrity, can be prepared via atomic layer deposition and fluoro-annealing at low process temperatures of between about 150° C. and less than 300° C. The film comprises a fluorinated metal oxide containing yttrium.
    Type: Application
    Filed: January 15, 2018
    Publication date: July 19, 2018
    Inventors: I-Kuan Lin, Carlo Waldfried, Jianan Hou
  • Publication number: 20180044800
    Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.
    Type: Application
    Filed: February 13, 2016
    Publication date: February 15, 2018
    Inventors: Bryan C. Hendrix, David W. Peters, Weimin Li, Carlo Waldfried, Richard A. Cooke, Nilesh Gunda, I-Kuan Lin
  • Publication number: 20170032942
    Abstract: Disclosed herein are surface coatings for plasma components that have the benefit of being robust against chemical and plasma physical attack in aggressive (e.g., fluorine-based) plasma environments. The coatings also provide low plasma surface recombination rates for active oxygen, nitrogen, fluorine, and hydrogen species when compared with other known surface treatments. The coatings can be applied to any plasma system component not requiring etching or plasma cleaning including but not limited to materials like quartz, aluminum, or anodized aluminum. Additionally, the efficiency of the system is increased by applying a non-reactive coating to system components thereby increasing the flow of excited plasma species to the plasma chamber of the system.
    Type: Application
    Filed: November 21, 2014
    Publication date: February 2, 2017
    Inventor: Carlo WALDFRIED
  • Publication number: 20160336210
    Abstract: An electrostatic chuck includes a ceramic structural element, at least one electrode disposed on the ceramic structural element, and a surface dielectric layer disposed over the at least one electrode, the surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck. The surface dielectric layer comprises: (i) an insulator layer of amorphous alumina, of a thickness of less than about 5 microns, disposed over the at least one electrode; and (ii) a stack of dielectric layers disposed over the insulator layer. The stack of dielectric layers includes: (a) at least one dielectric layer including aluminum oxynitride; and (b) at least one dielectric layer including at least one of silicon oxide and silicon oxynitride.
    Type: Application
    Filed: February 6, 2015
    Publication date: November 17, 2016
    Inventors: Richard A. Cooke, Wolfram Neff, Carlo Waldfried, Jakub Rybczynski, Michael Hanagan, Wade Krull
  • Patent number: 9128382
    Abstract: A method for processing a substrate includes arranging a substrate including masked portions and unmasked portions in a process chamber; creating plasma in a process chamber; supplying a passivation gas mixture that includes nitrogen or carbon to create a plasma passivation gas mixture; exposing a substrate to the plasma passivation gas mixture to create a passivation layer on the unmasked portions of the substrate; supplying a stripping gas mixture that includes oxygen to the plasma to create a plasma stripping gas mixture; exposing the substrate to the plasma stripping gas mixture to strip at least part of the masked portions and at least part of the unmasked portions; and repeating creating the passivation layer and the stripping to remove a predetermined amount of the masked portions.
    Type: Grant
    Filed: November 5, 2013
    Date of Patent: September 8, 2015
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Ivan Berry, Orlando Escorcia, Keping Han, Jianan Hou, Shijian Luo, Carlo Waldfried
  • Publication number: 20150136171
    Abstract: A plasma ashing system includes a process chamber including a substrate. A carrier gas supply supplies a carrier gas to the processing chamber. A plasma source is configured to create plasma to the process chamber. A liquid injection source is configured to at least one of inject a compound into the plasma or supply the compound into the plasma. The compound is normally a liquid at room temperature and at atmospheric pressure. A controller is configured to control the liquid injection source, to expose the substrate to the plasma for a predetermined period and to purge reactants from the processing chamber after the predetermined period.
    Type: Application
    Filed: November 18, 2013
    Publication date: May 21, 2015
    Applicant: Lam Research Corporation
    Inventors: Carlo Waldfried, Orlando Escorcia
  • Publication number: 20140263179
    Abstract: A system includes a tuning element comprising a shaft and a tuning stub. The tuning stub includes a surface with a center point. The shaft is connected to the surface of the tuning stub at a location that is offset from the center point. A waveguide includes an opening into an inner portion of the waveguide. The shaft passes through the opening and the tuning stub is arranged in the inner portion of the waveguide. A first actuator selectively rotates the shaft.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: Lam Research Corporation
    Inventors: Carlo Waldfried, Orlando Escorcia, William Hansen
  • Publication number: 20140103010
    Abstract: A method for processing a substrate includes arranging a substrate including masked portions and unmasked portions in a process chamber; creating plasma in a process chamber; supplying a passivation gas mixture that includes nitrogen or carbon to create a plasma passivation gas mixture; exposing a substrate to the plasma passivation gas mixture to create a passivation layer on the unmasked portions of the substrate; supplying a stripping gas mixture that includes oxygen to the plasma to create a plasma stripping gas mixture; exposing the substrate to the plasma stripping gas mixture to strip at least part of the masked portions and at least part of the unmasked portions; and repeating creating the passivation layer and the stripping to remove a predetermined amount of the masked portions.
    Type: Application
    Filed: November 5, 2013
    Publication date: April 17, 2014
    Applicant: Lam Research Corporation
    Inventors: Ivan Berry, Orlando Escorcia, Keping Han, Jianan Hou, Shijian Luo, Carlo Waldfried
  • Publication number: 20140076353
    Abstract: A plasma ashing process for removing photoresist, polymers and/or residues from a substrate, the process includes placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (02) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma by adding an atomic oxygen scavenging gas to the gas mixture; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.
    Type: Application
    Filed: November 18, 2013
    Publication date: March 20, 2014
    Applicant: Lam Research Corporation
    Inventors: Ivan L. Berry, Carlo Waldfried, Shijian Luo, Orlando Escorcia
  • Patent number: 8580076
    Abstract: A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).
    Type: Grant
    Filed: May 22, 2003
    Date of Patent: November 12, 2013
    Assignee: LAM Research Corporation
    Inventors: Alan Frederick Becknell, Thomas James Buckley, David Ferris, Richard E. Pingree, Jr., Palanikumaran Sakthivel, Aseem Kumar Srivastava, Carlo Waldfried
  • Publication number: 20130248113
    Abstract: Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non-oxidizing plasma processes.
    Type: Application
    Filed: May 13, 2013
    Publication date: September 26, 2013
    Applicant: Lam Research Corporation
    Inventors: Phillip Geissbûhler, Ivan Berry, Armin Huseinovic, Shijian Luo, Aseem Kumar Srivastava, Carlo Waldfried
  • Patent number: 8338315
    Abstract: Processes for curing silicon based low k dielectric materials generally includes exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere having an oxidant in an amount of about 10 to about 500 parts per million for a period of time and intensity effective to cure the silicon based low k dielectric material so to change a selected one of chemical, physical, mechanical, and electrical properties and combinations thereof relative to the silicon based low k dielectric material prior to the ultraviolet radiation exposure. Also disclosed herein are silicon base low k dielectric materials substantially free of sub-oxidized SiO species.
    Type: Grant
    Filed: February 26, 2008
    Date of Patent: December 25, 2012
    Assignee: Axcelis Technologies, Inc.
    Inventors: Darren L. Moore, Carlo Waldfried, Ganesh Rajagopalan
  • Publication number: 20120024314
    Abstract: Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.
    Type: Application
    Filed: July 27, 2010
    Publication date: February 2, 2012
    Applicant: AXCELIS TECHNOLOGIES, INC.
    Inventors: SHIJIAN LUO, ORLANDO ESCORCIA, CARLO WALDFRIED
  • Publication number: 20110226280
    Abstract: A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.
    Type: Application
    Filed: May 27, 2011
    Publication date: September 22, 2011
    Applicant: AXCELIS TECHNOLOGIES, INC.
    Inventors: Ivan L. Berry, Carlo Waldfried, Shijian Luo, Orlando Escorcia
  • Publication number: 20110136346
    Abstract: Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non-oxidizing plasma processes.
    Type: Application
    Filed: December 4, 2009
    Publication date: June 9, 2011
    Applicant: AXCELIS TECHNOLOGIES, INC.
    Inventors: Phillip Geissbühler, Ivan Berry, Armin Huseinovic, Shijian Luo, Aseem Kumar Srivastava, Carlo Waldfried