Abstract: A transistor device includes a gate region disposed adjacent to a semiconductor substrate such that a low impedance channel is formed between a source region and drain region of a transistor device when a voltage is applied to its gate. The drain region of the device can be disposed aside the gate region on a common surface of the semiconductor substrate. The source region of the device also can be disposed adjacent to the substrate but on a side of the semiconductor substrate opposing the drain and/or gate regions. Based on this topology, a transistor device can be fabricated with a buried source to enhance its operating characteristics such as switching speed.