Abstract: The invention provides non-affinity based isotope tagged peptides, chemistries for making these peptides, and methods for using these peptides. In one aspect, tags comprise a reactive site (RS) for reacting with a molecule on a protein to form a stable association with the peptide (e.g., a covalent bond) and an anchoring site (AS) group for reversibly or removably anchoring the tag to a solid phase such as a resin support. Anchoring may be direct or indirect (e.g., through a linker molecule). Preferably, the anchoring site comprises a biotin compound. Preferably, the tag comprises a mass-altering label, such as a stable isotope, such that association of the tag with the peptide can be monitored by mass spectrometry. The reagents can be used for rapid and quantitative analysis of proteins or protein function in mixtures of proteins.

Abstract: An epitaxial device module monolithically integrated with a CMOS structure in a bulk or thick-film SOI substrate, comprising an active area on which epitaxial layers are formed by selective or non-selective epitaxial growth and a separate active area in which the CMOS structure is formed. A hard mask for epitaxy having an opening therein provides self-alignment for optional ion implants into the substrate. The ion-implanted region overlaps the active region underneath the epitaxial layer, a portion of the source/drain region of the CMOS structure and the isolation region separating the two active areas, thereby establishing a conductive path underneath the isolation region between the two active areas.

Abstract: Several detailed layout designs are disclosed, for the monolithic integration of avalanche devices in large arrays, that can be operated as Avalanche Photo-Diodes (APDs) or Avalanche Light Emitting Diodes (ALEDs) depending only on the applied bias conditions, which can be software-controlled from peripheral circuitry. If the deposited films have direct bandgaps, then the devices can emit light even in the absence of avalanche operation. In particular, the layouts according to the invention comprise a sensor/emitter matrix achieved through the replication of basic Pixel/Lixel cells.

Abstract: Imaging devices including a novel imaging system wherein a 2-dimensional pixel array has a diagonal dimension larger than the diameter measurement of the image circle, thereby being capable of handling rectangular images with multiple aspect ratios. These new imaging devices can be used in various electronic imaging apparatus with or without a lens system.

Abstract: An airflow converger belonging to the field of auto parts, that was developed to improve air supply conditions and performance of internal combustion engines includes: a tubular body equipped at an upper end with an air inlet, having parallel fins that direct airflow lines in parallel; internally, the body has an inner surface that acts on the airflow; and an opposite end of the body has an outlet positioned horizontally and connected to an air receiving medium like a carburetor or throttle body of a vehicle's engine system, the airflow lines flowing in parallel as they move through the body from the inlet to the outlet.

Abstract: An analog-to-digital converter apparatus for analog source signals of one polarity, includes one comparator formed from transistors, a block of digitally addressable voltage sources to set a reference voltage of the comparator, an asynchronous n-bit digital counter, a block of digitally addressable voltage sources to set the potential to be applied to the signal source, a digital control unit, a block storing the calibration data for an input capacitor of the comparator, and a base-2 multiplier block, being interconnected by lines, including a line connecting the input analog signal to the drain of a pass transistor, a line connecting the block of voltage sources to be connected to the signal source, a line connecting the digital control unit to transistor gates, and a line carrying the signal Vref from the block of digitally addressed voltage sources to the comparator.

Abstract: A metal insulator semiconductor field effect transistor (MISFET) is disclosed comprising a source layer being made with a material having a source band-gap (EG2) and a source mid-gap value (EGM2), the source layer having a source Fermi-Level (EF2). A drain layer has a drain Fermi-Level (EF4). A channel layer is provided between the source layer and the drain layer, the channel layer being made with a material having a channel band-gap (EG3) and a channel mid-gap value (EGM3), the channel layer having a channel Fermi-Level (EF3). A source contact layer is connected to the source layer opposite the channel layer, the source contact layer having a source contact Fermi-Level (EF1). A gate electrode has a gate electrode Fermi-Level (EF6). The source band-gap is substantially narrower (EG2) than the channel band-gap (EG3).

Abstract: A new methodology is disclosed to convert analog electric signals into digital data. The method provides a serial scheme without pre-definition of the number of bits (dynamic range). It allows digital processing of the input signal without sampling and holding of the input signal. Processing of the input signal is clock-less and asynchronously dependent on the time-evolution of the input signal itself. Thereby, a programmable, dynamic adjustment of bandwidth (product of dynamic range and speed of conversion) of the analog-to-digital conversion process can be achieved depending on the characteristics of the input signal. Dynamic adjustment of the bandwidth is accomplished by digitally controlling a “threshold” value at the input capacitor of the comparator, which when met by the input signal, triggers a transition at the output of the comparator.

Abstract: A method of fabricating heterojunction devices, in which heterojunction devices are epitaxially formed on active area regions surrounded by field oxide regions and containing embedded semiconductor wells. The epitaxial growth of the heterojunction device layers may be selective or not and the epitaxial layer may be formed so as to contact individually each one of a plurality of heterojunction devices or contact a plurality of heterojunction devices in parallel. This method can be used to fabricate three-terminal devices and vertically stacked devices.

Abstract: Light sensing devices are monolithically integrates with CMOS devices on Thin-Film Silicon-On-insulator (TF-SOI) or Thin-Film Germanium-On-Insulator (TF-GeOI) substrates. Photodiode active layers are epitaxially grown on the front-side of the substrate and after full processing of the front-side of the substrate, the substrate material is removed under the buried insulator (buried oxide). Monolithically integrated structures are then fabricated on the back of the buried oxide. The back-side is then bonded to a new substrate that is transparent to the wavelengths of interest. For example, quartz, sapphire, glass, or plastic, are suitable for the visible range. Back-side illumination of the sensor matrix is thereby allowed, with light traveling through the structures fabricated on the back of the substrate, opposite to the side on which CMOS is made.

Abstract: In-pixel circuit architectures for CMOS image sensors are disclosed, which are suitable for avalanche photo-diodes operating either in linear or in non-linear mode. These architectures apply in particular to photo-diodes and image sensors in which CMOS devices are fabricated on thin-film silicon-on-insulator substrates.

Abstract: A method of fabricating light-sensing devices including photodiodes monolithically integrated with CMOS devices. Several types of photodiode devices (PIN, HIP) are epitaxially grown in one single step on active areas implanted in a common semiconductor substrate, the active areas having defined polarities. The epitaxially grown layers for the photodiode devices may be either undoped or in-situ doped with profiles suitable for their respective operation. With appropriate choice of substrate materials, device layers and heterojunction engineering and process architecture, it is possible co fabricate siliconbased and germanium-based multi-spectral sensors that can deliver pixel density and cost of fabrication comparable to the state of the art CCDs and CMOS image sensors. The method can be implemented with epitaxially deposited films on the following substrates: Silicon Bulk, Thick-Film and Thin-Film Silicon-On-Insulator (SOI), Germanium Bulk, Thick-Film and Thin-Film Germanium-On-Insulator (GeOI).

Abstract: A device comprising a number of different wavelength-selective active-layers arranged in a vertical stack, having band-alignment and work-function engineered lateral contacts to said active-layers, consisting of a contact-insulator and a conductor-insulator. Photons of different energies are selectively absorbed in or emitted by the active-layers. Contact means are arranged separately on the lateral sides of the vertical stack for injecting charge carriers into the photon-emitting layers and extracting charge carriers generated in the photon-absorbing layers. The device can be used for various applications for light emission or light absorption. The stack of active layers may also include top and bottom electrodes whereby the device can also be operated as a FET device.

Abstract: A metal insulator semiconductor field effect transistor (MISFET) is disclosed comprising a source layer being made with a material having a source band-gap (EG2) and a source mid-gap value (EGM2), the source layer having a source Fermi-Level (EF2). A drain layer has a drain Fermi-Level (EF4). A channel layer is provided between the source layer and the drain layer, the channel layer being made with a material having a channel band-gap (EG3) and a channel mid-gap value (EGM3), the channel layer having a channel Fermi-Level (EF3). A source contact layer is connected to the source layer opposite the channel layer, the source contact layer having a source contact Fermi-Level (EF1). A gate electrode has a gate electrode Fermi-Level (EF6). The source band-gap is substantially narrower (EG2) than the channel band-gap (EG3).

Abstract: The invention provides non-affinity based isotope tagged peptides, chemistries for making these peptides, and methods for using these peptides. In one aspect, tags comprise a reactive site (RS) for reacting with a molecule on a protein to form a stable association with the peptide (e.g., a covalent bond) and an anchoring site (AS) group for reversibly or removably anchoring the tag to a solid phase such as a resin support. Anchoring may be direct or indirect (e.g., through a linker molecule). Preferably, the anchoring site comprises a biotin compound. Preferably, the tag comprises a mass-altering label, such as a stable isotope, such that association of the tag with the peptide can be monitored by mass spectrometry. The reagents can be used for rapid and quantitative analysis of proteins or protein function in mixtures of proteins.

Abstract: The invention provides non-affinity based isotope tagged peptides, chemistries for making these peptides, and methods for using these peptides. In one aspect, tags comprise a reactive site (RS) for reacting with a molecule on a protein to form a stable association with the peptide (e.g., a covalent bond) and an anchoring site (AS) group for reversibly or removably anchoring the tag to a solid phase such as a resin support. Anchoring may be direct or indirect (e.g., through a linker molecule). Preferably, the tag comprises a mass-altering label, such as a stable isotope, such that association of the tag with the peptide can be monitored by mass spectrometry. The reagents can be used for rapid and quantitative analysis of proteins or protein function in mixtures of proteins.

Abstract: The present invention provides a semiconductor device (e.g., MOSFET) having a channel above the surface of the wafer containing a well and a junction. The elevated channel may be selectively epitaxially grown and enables higher mobility, thereby enabling a higher current flow at a lower voltage through the device. The process flow of the invention provides for the implantation and thermal processing of the wells and junctions prior to the growth of a channel or the deposition of a gate stack. By implanting and annealing the wells and junctions prior to the formation of the channel and gate, a greater variety of materials are available for the channel and gate, e.g., undoped materials may be used to form the channel, metal oxides and similar materials with large dielectrics may be used to form a gate stack, and barrier metals and pure metals (copper, tungsten, etc.) may be used as gate electrodes.

Abstract: The present invention describes a system for supplying traffic information on public thoroughfares, comprising a collection device (1), which contains sensors to collect data about the traffic on several traffic thoroughfares, the collection device being in communication with a data analyzer (2). This analyzer (2) receives the data referring to the traffic conditions on the traffic thoroughfares from the collection devices (1) and compares it with other data received before and stored in the analyzer's memory. This comparison is made by verifying if any of the received data is different from that stored. If the existence of different data is confirmed, the analyzer then stores it in the analyzer's memory (thus updating its memory data), and sends it to a transmission device (3), so that the latter can send the data, via radio waves, to a receiver (4) located in users vehicles (if the data is the same as that stored, it is discarded).

Abstract: A method for producing thin film deposits of binary shape-memory alloys using an ion sputtering deposition process comprising using a hot pressed metal powder composition target.