Abstract: A method of forming a gate of a planar metal oxide semiconductor field effect transistor (MOSFET) reduces gate-drain capacitance. The method may include forming a first gate dielectric portion of the planar MOSFET with a first thickness that is configured to reduce the gate-drain capacitance of the planar MOSFET, forming a second gate dielectric portion of the planar MOSFET on the substrate with a second thickness less than the first thickness, and forming the gate of the planar MOSFET on the first gate dielectric portion and the second gate dielectric portion on the substrate.

Abstract: A method of forming a gate of a planar metal oxide semiconductor field effect transistor (MOSFET) reduces gate-drain capacitance. The method may include forming a first gate dielectric portion of the planar MOSFET with a first thickness that is configured to reduce the gate-drain capacitance of the planar MOSFET, forming a second gate dielectric portion of the planar MOSFET on the substrate with a second thickness less than the first thickness, and forming the gate of the planar MOSFET on the first gate dielectric portion and the second gate dielectric portion on the substrate.

Abstract: An apparatus includes a base, an inductive charger, concealed under the base for charging an electronic device wirelessly, and a retractable cup holder. The retractable cup holder is displaceable between a home position recessed and nested within the base and a deployed position overlying the base for stably supporting the side of a tall drink cup, drink bottle, can or other item.

Abstract: An apparatus includes a base, an inductive charger, concealed under the base for charging an electronic device wirelessly, and a retractable cup holder. The retractable cup holder is displaceable between a home position recessed and nested within the base and a deployed position overlying the base for stably supporting the side of a tall drink cup, drink bottle, can or other item.

Abstract: A remediation server utilizing a deep neural network to analyze a live service to predict when a service is about to experience a failure and determine the least intrusive method of remediation. The remediation server prioritizing maintaining the highest level of system availability when determining a remediation for a failed or failing service.

Abstract: A vehicle seat includes a seat base, a side shield coupled to the seat base and defining inward and outward surfaces and an attachment tower extending from a central portion of the inward surface to an attachment flange of the seat base. The side shield conceals the attachment tower and the attachment flange, and the attachment tower defines a guide for connecting the attachment tower and flange.

Abstract: A vehicle seat includes a seat base, a side shield coupled to the seat base and defining inward and outward surfaces and an attachment tower extending from a central portion of the inward surface to an attachment flange of the seat base. The side shield conceals the attachment tower and the attachment flange, and the attachment tower defines a guide for connecting the attachment tower and flange.

Abstract: Methods and apparatuses for filling an epitaxial layer into a trench/via/structure formed in a substrate with good deposition profile control and film uniformity across the substrate are provided In one embodiment, a method of depositing a epitaxial layer on the substrate includes supplying a gas mixture having a first ratio of a dichlorosilane gas to a chlorine containing gas into the processing chamber, altering the gas mixture to have a second ratio of the dichlorosilane gas to the chlorine containing gas into the processing chamber, maintaining a substrate temperature of between about 600 degrees Celsius and about 1000 degrees Celsius, and filling an opening formed in a substrate.

Abstract: Methods and apparatuses for filling an epitaxial layer into a trench/via/structure formed in a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of depositing a epitaxial layer on the substrate includes supplying a gas mixture having a first ratio of a dichlorosilane gas to a chlorine containing gas into the processing chamber, altering the gas mixture to have a second ratio of the dichlorosilane gas to the chlorine containing gas into the processing chamber, maintaining a substrate temperature of between about 600 degrees Celsius and about 1000 degrees Celsius, and filling an opening formed in a substrate.

Abstract: A method and apparatus for controlling the temperature in a processing chamber for semiconductor processing is disclosed herein. In one embodiment, a processing chamber for semiconductor processing is provided. The processing chamber includes a chamber body and a temperature control system. The temperature control system includes a temperature sensor configured to measure a temperature in an upper dome of the processing chamber, a blower, and a controller configured to control the temperature control system. The temperature control system is configured to carry out the method provided herein for controlling the temperature in a processing chamber.

Abstract: The invention relates to a method to produce blister copper or high grade matte in a smelting reactor directly from a sulfidic copper concentrate containing material and/or finely ground copper matte, whereby oxygen-containing gas, copper concentrate and/or finely ground copper matte are fed into the reactor. According to the invention CaO and SiO2 containing flux is fed into the smelting reactor along with oxygen-containing gas, copper concentrate and/or copper matte, and part of the copper in the concentrate and/or in the matte is oxidized in order to form a slag in which the CaO/SiO2 ratio is higher than 1.5, and in which the copper content is in oxidized form, and in which the lime content calculated in a CaO+SiO2+FeOx=100 system is higher than 20%.