Abstract: A method of sensing current flowing in a power module is provided. The module includes a first substrate having a metallized side, a second substrate spaced apart from the first substrate and having a metallized side facing the metallized side of the first substrate, and a semiconductor die interposed between the first and second substrates. The semiconductor die has a first side connected to the metallized side of the first substrate and an opposing second side connected to the metallized side of the second substrate. The module further includes a sensor connected to the metallized side of the first substrate and galvanically isolated from the metallized side of the second substrate. The sensor is aligned with a first metal region of the metallized side of the second substrate, for measuring a magnetic field generated by the first metal region responsive to the current flowing through the first metal region.

Abstract: An example of a power converter is disclosed. At least one converter module provides an alternating output voltage. The converter module is coupled to an output terminal by a conductor path. A current sensor is placed within a magnetic field generated by a current through the conductor path. The current sensor includes at least one magneto-resistive sensing element to provide a sensor signal in response to the magnetic field. A signal generator causes a magnetic self-test field at the magneto-resistive sensing element. A readout circuit receives a first sensor signal of the magneto-resistive sensing element before the magnetic self-test field is applied and a second sensor signal of the magneto-resistive sensing element after the magnetic self-test field is applied. An evaluation circuit determines information indicating a safe operation of the current sensor based on an evaluation of the first sensor signal and the second sensor signal.

Abstract: A method of sensing current flowing in a power module is provided. The module includes a first substrate having a metallized side, a second substrate spaced apart from the first substrate and having a metallized side facing the metallized side of the first substrate, and a semiconductor die interposed between the first and second substrates. The semiconductor die has a first side connected to the metallized side of the first substrate and an opposing second side connected to the metallized side of the second substrate. The module further includes a sensor connected to the metallized side of the first substrate and galvanically isolated from the metallized side of the second substrate. The sensor is aligned with a first metal region of the metallized side of the second substrate, for measuring a magnetic field generated by the first metal region responsive to the current flowing through the first metal region.

Abstract: A power module includes a first substrate having a metallized side, a second substrate spaced apart from the first substrate and having a metallized side facing the metallized side of the first substrate, and a semiconductor die interposed between the first and second substrates. The semiconductor die has a first side connected to the metallized side of the first substrate and an opposing second side connected to the metallized side of the second substrate. The power module further includes a sensor connected to the metallized side of the first substrate and galvanically isolated from the metallized side of the second substrate. The sensor is aligned with a first metal region of the metallized side of the second substrate so that the sensor can measure a magnetic field generated by the first metal region.

Abstract: An example of a device comprises a signal generator to generate a signal causing a magnetic self test field for a magneto-resistive sensing element. A signal input is configures to receive a first sensor signal at a first time instant before the magnetic self test field is applied and a second sensor signal at a second time instant after the magnetic self test field is applied. An evaluation circuit is configured to determine information indicating a safe operation based on an evaluation of the first sensor signal and the second sensor signal.

Abstract: In one example, a method includes determining that an insulated-gate bipolar transistor (IGBT) is saturated, and while the IGBT is saturated, determining a collector-emitter saturation voltage (VCESat) of the IGBT.

Abstract: An example of a device comprises a signal generator to generate a signal causing a magnetic self test field for a magneto-resistive sensing element. A signal input is configures to receive a first sensor signal at a first time instant before the magnetic self test field is applied and a second sensor signal at a second time instant after the magnetic self test field is applied. An evaluation circuit is configured to determine information indicating a safe operation based on an evaluation of the first sensor signal and the second sensor signal.

Abstract: A device includes a semiconductor element and a radio frequency identification (RFID) tag. The RFID tag is configured to provide information about at least one of a property of the device and a property of a manufacturing of the device.

Abstract: A cooling system for molded modules includes a plurality of individual modules each including a semiconductor die encapsulated by a mold compound, a plurality of leads electrically connected to the semiconductor die and at least partly uncovered by the mold compound, and a cooling plate at least partly uncovered by the mold compound. A molded body surrounds a periphery of each individual module to form a multi-die module. The leads of each individual module and the cooling plates are at least partly uncovered by the molded body. A lid with a port is attached to a periphery of the molded body at a first side of the multi-die module. The lid seals the multi-die module at the first side to form a cavity between the lid and the molded body for permitting fluid exiting or entering the port to contact the cooling plates of each individual module.

Abstract: A device includes a semiconductor element and a radio frequency identification (RFID) tag. The RFID tag is configured to provide information about at least one of a property of the device and a property of a manufacturing of the device.

Abstract: An example of a device comprises a signal generator to generate a signal causing a magnetic self test field for a magneto-resistive sensing element. A signal input is configures to receive a first sensor signal at a first time instant before the magnetic self test field is applied and a second sensor signal at a second time instant after the magnetic self test field is applied. An evaluation circuit is configured to determine information indicating a safe operation based on an evaluation of the first sensor signal and the second sensor signal.

Abstract: In one example, a method includes determining that an insulated-gate bipolar transistor (IGBT) is saturated, and while the IGBT is saturated, determining a collector-emitter saturation voltage (VCESat) of the IGBT.

Abstract: A cooling system for molded modules includes a plurality of individual modules each including a semiconductor die encapsulated by a mold compound, a plurality of leads electrically connected to the semiconductor die and at least partly uncovered by the mold compound, and a cooling plate at least partly uncovered by the mold compound. A molded body surrounds a periphery of each individual module to form a multi-die module. The leads of each individual module and the cooling plates are at least partly uncovered by the molded body. A lid with a port is attached to a periphery of the molded body at a first side of the multi-die module. The lid seals the multi-die module at the first side to form a cavity between the lid and the molded body for permitting fluid exiting or entering the port to contact the cooling plates of each individual module.

Abstract: A power module includes a first substrate having a metallized side, a second substrate spaced apart from the first substrate and having a metallized side facing the metallized side of the first substrate, and a semiconductor die interposed between the first and second substrates. The semiconductor die has a first side connected to the metallized side of the first substrate and an opposing second side connected to the metallized side of the second substrate. The power module further includes a sensor connected to the metallized side of the first substrate and galvanically isolated from the metallized side of the second substrate. The sensor is aligned with a first metal region of the metallized side of the second substrate so that the sensor can measure a magnetic field generated by the first metal region.