Abstract: Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Abstract: Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Abstract: Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Abstract: Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Abstract: Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Abstract: Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Abstract: A highly sensitive impedimetric sensor in which the highly conductive electrodes are separated by a barrier of insulating material is disclosed. The sensor is used to determine directly the presence of analytes in a biological sample of human, veterinary or environmental origin.

Abstract: A diffraction grating coupler which includes an optical waveguide having a first surface and a second surface opposing the first surface, the optical waveguide having a grating on one of its surfaces. The diffraction grating coupler further includes an elastic polymer film deposited on and attached to the optical waveguide, the elastic polymer film partially surrounding the optical waveguide and leaving one of the two surfaces of the optical waveguide open, the diffraction grating coupler being mountable on a specimen by attaching the elastic polymer film to the specimen.

Abstract: A planar optical waveguide interferometer includes a substrate, a bimodal waveguide having at least one layer deposited on the substrate, and a sensor plate located in a selected area of the upper side of the bimodal waveguide. The bimodal waveguide supports a zero-order and a first-order transverse propagating modes where the transverse propagating modes has different dispersion. The bimodal waveguide is designed for confining light in lateral direction and thus is designed for supporting one lateral mode. The sensor plate is designed for receiving a chemical, biological or physical stimulus. The stimulus changes the effective refractive index of said bimodal waveguide. Chip, sensor and sensing method utilize a planar optical waveguide interferometer are provided.

Abstract: A diffraction grating coupler which includes an optical waveguide having a first surface and a second surface opposing the first surface, the optical waveguide having a grating on one of its surfaces. The diffraction grating coupler further includes an elastic polymer film deposited on and attached to the optical waveguide, the elastic polymer film partially surrounding the optical waveguide and leaving one of the two surfaces of the optical waveguide open, the diffraction grating coupler being mountable on a specimen by attaching the elastic polymer film to the specimen.

Abstract: Planar optical waveguide interferometer (15, 25, 35, 45) comprising: a substrate (8, 28, 38, 48); a bimodal waveguide (10, 20, 20?, 30, 40) comprising at least one layer (1, 2, 3) deposited on said substrate (8, 28, 38, 48), said bimodal waveguide (10, 20, 20?, 30, 40) being designed for supporting a zero-order and a first-order transverse propagating modes, said transverse propagating modes having different dispersion; a sensor plate (21, 31, 41, 51) located in a selected area of the upper side of said bimodal waveguide (10, 20, 20?, 30, 40), said sensor plate (21, 31, 41, 51) being designed for receiving a chemical, biological or physical stimulus, said stimulus being capable of changing the effective refractive index of said bimodal waveguide (10, 20, 20?, 30, 40). The bimodal waveguide (10, 20, 20?, 30, 40) comprises confining means (9) designed for confining light in lateral direction, the bimodal waveguide (10, 20, 20?, 30, 40) being thus designed for supporting one lateral mode.

Abstract: The invention relates to a highly sensitive impedimetric sensor in which the highly conductive electrodes are separated by a barrier of insulating material. Said sensor is used to determine directly the presence of analytes in a biological sample of human, veterinary or environmental origin.

Abstract: High efficiency silicon radiation detector from ultraviolet to near infrared region, including a structure with a wide spectral range that work at the ultraviolet region, said structure, comprises a silicon photodetector with an excess of silicon 3-10%, and annealing temperature at 1100° C., increasing the wave length range from 200 to 1100 nm.