Patents by Inventor Carlos G. Ortiz

Carlos G. Ortiz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low molecular weight ethylene interpolymers and polymerization process
    Patent number: 6946531
    Abstract: Low molecular weight olefin polymers are prepared by a polymerization process employing titanium complexes comprising a 3-aryl-substituted cyclopentadienyl ring or substituted derivatives thereof as polymerization catalysts.
    Type: Grant
    Filed: September 18, 2003
    Date of Patent: September 20, 2005
    Assignee: Dow Global Technologies Inc.
    Inventors: David D. Graf, Jerzy Klosin, Timothy A. Herzog, Peter N. Nickias, Carlos G. Ortiz, Jorge Soto, Ravi B. Shankar, Daniel D. VanderLende
  • Low molecular weight ethylene interpolymers and polymerization process
    Publication number: 20040092680
    Abstract: Low molecular weight olefin polymers are prepared by a polymerization process employing titanium complexes comprising a 3-aryl-substituted cyclopentadienyl ring or substituted derivatives thereof as polymerization catalysts.
    Type: Application
    Filed: September 18, 2003
    Publication date: May 13, 2004
    Inventors: David D. Graf, Jerzy Klosin, Timothy A. Herzog, Peter N. Nickias, Carlos G. Ortiz, Jorge Soto, Ravi B. Shankar, Daniel D. VanderLende
  • MOCVD of WNx thin films using imido precursors
    Patent number: 6596888
    Abstract: Single imido tungsten imido precursors are described for the deposition of tungsten nitride on a substrate by processes such as metal organic chemical vapor deposition. The precursors may be employed to form diffusion barrier layers on microelectronic devices. A method for forming tungsten nitride layers includes the steps of providing a tungsten imido species having the formula LyW(NR)Xn, where R is a carbon containing group, y is an integer between 0 and 5, n is an integer between 0 and 4 and Ly and Xn are selected from the group of non-imido ligands. The single imido tungsten imido species is flowed to a surface of a substrate where the single imido tungsten imido species decomposes to form a tungsten nitride layer.
    Type: Grant
    Filed: May 15, 2001
    Date of Patent: July 22, 2003
    Assignee: University of Florida
    Inventors: Lisa McElwee-White, Timothy J. Anderson, Steven W. Johnston, Carlos G. Ortiz, Omar J. Bchir
  • MOCVD of WNx thin films using imido precursors
    Publication number: 20020045343
    Abstract: Single imido tungsten imido precursors are described for the deposition of tungsten nitride on a substrate by processes such as metal organic chemical vapor deposition. The precursors may be employed to form diffusion barrier layers on microelectronic devices. A method for forming tungsten nitride layers includes the steps of providing a tungsten imido species having the formula LyW(NR)Xn, where R is a carbon containing group, y is an integer between 0 and 5, n is an integer between 0 and 4 and Ly and Xn are selected from the group of non-imido ligands. The single imido tungsten imido species is flowed to a surface of a substrate where the single imido tungsten imido species decomposes to form a tungsten nitride layer.
    Type: Application
    Filed: May 15, 2001
    Publication date: April 18, 2002
    Inventors: Lisa McElwee-White, Timothy J. Anderson, Steven W. Johnston, Carlos G. Ortiz, Omer J. Bchir