Abstract: A method of forming interconnects on an electronic device that can be bonded to another electronic device at a low processing temperature can be carried out by depositing a first interconnect material on the electronic device forming protrusions and then depositing a second interconnect material to at least partially cover the protrusions, wherein the second interconnect material has a lower flow temperature than the first interconnect material. The method is carried out by flowing a molten solder into a mold having microcavities to fill the cavities and then allowed to solidify. The mold is then aligned with a silicon wafer containing chips deposited with high melting temperatures solder bumps such that each microcavity of the mold is aligned with each high melting temperature solder bump on the chip.

Abstract: A precise volume, precisely registerable carrier is provided for use with injection molding for producing integrated circuit bump contacts in the “flip chip” technology. A hemispherical cavity is produced by etching through and undercutting a registered opening into a transparent carrier. The hemispherical cavity has related specific volume and visible peripheral shape that permits simple optical quality control when the injection molding operation has filled the cavity and simple optical registration for fusing to the pads on the integrated circuit.

Abstract: A method for forming a quaternary alloy film of Co—W—P—Au for use as a diffusion barrier layer on a copper interconnect in a semiconductor structure and devices formed incorporating such film are disclosed. In the method, a substrate that has copper conductive regions on top is first pre-treated by two separate pre-treatment steps. In the first step, the substrate is immersed in a H2SO4 rinsing solution and next in a solution containing palladium ions for a length of time sufficient for the ions to deposit on the surface of the copper conductive regions. The substrate is then immersed in a solution that contains at least 15 gr/l sodium citrate or EDTA for removing excess palladium ions from the surface of the copper conductive regions.

Abstract: A paste is described for capping electrodes with an oxide free metal layer incorporating a solvent, an unzippable polymer and particles. The electrode could be an interconnect such as a C4 bump. A method for forming a coating and for testing integrated circuit chips is also described. The invention overcomes the problem of interconnecting Pb containing electrodes that are covered with an insulating oxide on integrated circuit chips by coating the Pb containing electrode with Au to provide an oxide free surface for testing and interconnection.

Abstract: A paste is described for capping electrodes with an oxide free metal layer incorporating a solvent, an unzippable polymer and particles. The electrode could be an interconnect such as a C4 bump. A method for forming a coating and for testing integrated circuit chips is also described. The invention overcomes the problem of interconnecting Pb containing electrodes that are covered with an insulating oxide on integrated circuit chips by coating the Pb containing electrode with Au to provide an oxide free surface for testing and interconnection.

Abstract: A method for forming solder bumps on an electronic structure including the steps of first providing a mold made by a sheet of a mold material having a thickness greater than that of the solder bumps to be formed, the mold material has sufficient optical transparency so as to allow the inspection of a solder material subsequently filled into the mold cavities that are formed in the mold material, and a coefficient of thermal expansion that is substantially similar to the substrate which the mold will be mated to, forming a multiplicity of mold cavities in the sheet of mold material, filling the multiplicity of mold cavities with a solder material, cooling the mold to a temperature that is sufficient to solidify the solder material in the multiplicity of mold cavities, positioning the mold intimately with the electronic structure such that the cavities facing the structure, and heating the mold and the structure together to a temperature sufficiently high such that the solder material transfers onto the electro

Abstract: A method for forming solder bumps on an electronic structure including the steps of first providing a mold made by a sheet of a mold material having a thickness greater than that of the solder bumps to be formed, the mold material has sufficient optical transparency so as to allow the inspection of a solder material subsequently filled into the mold cavities that are formed in the mold material, and a coefficient of thermal expansion that is substantially similar to the substrate which the mold will be mated to, forming a multiplicity of mold cavities in the sheet of mold material, filling the multiplicity of mold cavities with a solder material, cooling the mold to a temperature that is sufficient to solidify the solder material in the multiplicity of mold cavities, positioning the mold intimately with the electronic structure such that the cavities facing the structure, and heating the mold and the structure together to a temperature sufficiently high such that the solder material transfers onto the electro

Abstract: A method of forming interconnects on an electronic device that can be bonded to another electronic device at a low processing temperature can be carried out by depositing a first interconnect material on the electronic device forming protrusions and then depositing a second interconnect material to at least partially cover the protrusions, wherein the second interconnect material has a lower flow temperature than the first interconnect material. The method is carried out by flowing a molten solder into a mold having microcavities to fill the cavities and then allowed to solidify. The mold is then aligned with a silicon wafer containing chips deposited with high melting temperatures solder bumps such that each microcavity of the mold is aligned with each high melting temperature solder bump on the chip.

Abstract: A precise volume, precisely registerable carrier is provided for use with injection molding for producing integrated circuit bump contacts in the "flip chip" technology. A hemispherical cavity is produced by etching through and undercutting a registered opening into a transparent carrier. The hemispherical cavity has related specific volume and visible peripheral shape that permits simple optical quality control when the injection molding operation has filled the cavity and simple optical registration for fusing to the pads on the integrated circuit.

Abstract: Enhanced adhesion between a vapor deposited metal and an organic polymer surface is achieved without utilizing any intermediate surface preparatory steps. The morphology of the polymer surface is tailored to produce mounds and dimples on the surface which leads to a mechanically tougher, interdigitated metal/polymer interface. In the preferred embodiment, a solution of a solvent or solvent system and two or more polymer precursors or polymers or combinations thereof are cast in a film on a substrate and heated to spontaneously form a rough surface due to phase separation. The surface topography of such a film consists of characteristic mounds and dimples depending upon the composition of the solution. Direct metal vapor deposition onto the roughened surface results in an enhanced adhesion of the metal to the organic polymer surface. The organic polymer surface or substrate may be, but need not be, attached to yet another underlying substrate such as a ceramic (e.g.

Abstract: A paste is described for capping electrodes with an oxide free metal layer incorporating a solvent, an unzippable polymer and particles. The electrode could be an interconnect such as a C4 bump. A method for forming a coating and for testing integrated circuit chips is also described. The invention overcomes the problem of interconnecting Pb containing electrodes that are covered with an insulating oxide on integrated circuit chips by coating the Pb containing electrode with Au to provide an oxide free surface for testing and interconnection.

Abstract: An interconnect system that has low alpha particle emission characteristics for use in an electronic device includes a semiconductor chip that has an upper surface and spaced apart electrically resistive bumps positioned on conductive regions of the upper surface, the electrically resistive bumps are made of a composite material of a polymer and metal particles, and a substrate that has conductive regions bonded to the electrically resistive bumps in a bonding process wherein the electrically resistive bumps convert to electrically conductive bumps after the bonding process.

Abstract: A method for forming solder bumps on an electronic structure including the steps of first providing a mold made by a sheet of a mold material having a thickness greater than that of the solder bumps to be formed, the mold material has sufficient optical transparency so as to allow the inspection of a solder material subsequently filled into the mold cavities that are formed in the mold material, and a coefficient of thermal expansion that is substantially similar to the substrate which the mold will be mated to, forming a multiplicity of mold cavities in the sheet of mold material, filling the multiplicity of mold cavities with a solder material, cooling the mold to a temperature that is sufficient to solidify the solder material in the multiplicity of mold cavities, positioning the mold intimately with the electronic structure such that the cavities facing the structure, and heating the mold and the structure together to a temperature sufficiently high such that the solder material transfers onto the electro

Abstract: A process for electrolessly depositing cobalt-tin alloys with adjustable tin contents from 1 to over 25 atomic percent tin is disclosed. The deposited alloy is useful in the electronics and computer industries for device, chip interconnection and packaging applications. When used for chip interconnection applications, for example, the invention replaces the currently used complicated ball-limiting-metallurgy. The invention may also be used to inhibit hillock formation and electromigration in copper wire structures found in computers and micron dimension electronic devices.

Abstract: Water based magnetic colloidal fluids, useable as inks, when prepared by coating chemically precipitated magnetite (Fe.sub.3 O.sub.4) with an adsorption site providing coating agent including certain organic anions, such as sulfates, sulfonates or amino carboxilates, and then dispersing the coated product with non-ionic, anionic or cationic surfactants may exhibit selectably cationic, anionic or non-ionic charge responsiveness.

Abstract: Improvements in water based magnetic inks of the type containing non-ionic, cationic and/or anionic surfactants by the inclusion of glycerol, non-volatile solvent such as mono-lower alkyl ethers of ethylene glycol and low molecular weight polyethylene diols.