Patents by Inventor Carlos R. Inomata

Carlos R. Inomata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon oxide film evaluation method
    Patent number: 5595916
    Abstract: In a silicon oxide film evaluation method for evaluating the silicon oxide film formed on a silicon substrate, radiation of a plurality of incident angles is irradiated to the silicon oxide film, reflected radiation of the radiation of the plural incident angles on the silicon oxide film is measured, reflectances for the radiation of the plural incident angles is computed, based on the radiation of the plural incident angles and reflected radiation thereof, a dielectric function is computed, based on the reflectances for the plural incident angles, and film quality of the silicon oxide film is evaluated, based on the dielectric function. The silicon oxide film evaluation method and apparatus can evaluate film quality of the silicon oxide film formed on the silicon substrate in non-contact and non-destructively.
    Type: Grant
    Filed: March 29, 1994
    Date of Patent: January 21, 1997
    Assignee: Fujitsu Limited
    Inventors: Shuzo Fujimura, Hiroki Ogawa, Kenji Ishikawa, Carlos R. Inomata