Abstract: A method for implementing ellipsometry for an ultrathin film includes directing a polarized light beam incident upon a sample surface, receiving an initial reflected beam from the sample surface and redirecting the initial reflected beam back upon said sample surface one or more times so as to produce a final reflected beam. The final reflected beam is received through an analyzer and at a detector so as to determine characteristics of the ultrathin film.

Abstract: A method for implementing ellipsometry for an ultrathin film includes directing a polarized light beam incident upon a sample surface, receiving an initial reflected beam from the sample surface and redirecting the initial reflected beam back upon said sample surface one or more times so as to produce a final reflected beam. The final reflected beam is received through an analyzer and at a detector so as to determine characteristics of the ultrathin film.

Abstract: A process control method to monitor ion implantation process conditions by measuring the optical properties of a masking material is provided. A patterned masking material may protect underlying regions of a semiconductor substrate from undergoing a chemical or physical change during an ion implantation process. The patterned masking material, however, may also undergo a chemical or physical change during processing. The chemical or physical changes to the masking material during such processing may also cause the optical properties of the material to change. The optical properties of the masking material may be used to determine the concentration of ions implanted into the semiconductor substrate.