Abstract: Methods for producing an off-orientation single crystal silicon wafer are disclosed. After a single crystal silicon ingot is grown, the single crystal silicon ingot is ground to increase an off-orientation of the single crystal silicon ingot. A wafer is sliced from ground single crystal silicon ingot. The wafer has an off-orientation greater than the ground single crystal silicon ingot.

Abstract: Systems and methods for controlling the surface profiles of wafers sliced in a wire saw machine. The systems and methods are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered for example by changing the temperature of a temperature-controlling fluid circulated in fluid communication with side walls attached to a fixed bearing sidewall of the wire saw.

Abstract: Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. Based on the measured amount of displacement of the sidewall, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

Abstract: Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. Based on the measured amount of displacement of the sidewall, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

Abstract: Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. The measured amount of displacement of the sidewall is stored as displacement data. Based on the stored data, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

Abstract: Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. The measured amount of displacement of the sidewall is stored as displacement data. Based on the stored data, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

Abstract: Methods are disclosed for determining mounting locations of ingots on a wire saw machine. The methods include measuring a test surface of a test wafer previously sliced by the wire saw machine from a test ingot to calibrate the system. A magnitude and a direction of an irregularity of the measured test surface of the test wafer is then determined. The mounting location is then determined for another ingot to be mounted on the ingot holder based on at least one of the magnitude and direction of the irregularity of the measured test surface of the test wafer.

Abstract: A system for ultrasonically cleaning one or more wires of a wire saw for slicing semiconductor or solar material into wafers. The system includes an ultrasonic transducer connected to a sonotrode. The system also includes a sonotrode plate adjacent to one or more of the wires. The sonotrode plate has an opening that exposes the sonotrode to one or more of the wires. The system further includes a tank for delivering a flow of liquid to contact the sonotrode and one or more of the wires. The tank is positioned on the same side of the wires as the sonotrode plate. The ultrasonic transducer is configured to vibrate and form cavitations in the liquid for the removal of contaminants from a surface of one or more of the wires.

Abstract: Methods are disclosed for controlling surface profiles of wafers cut in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

Abstract: Systems are disclosed for controlling the surface profiles of wafers cut in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

Abstract: Methods are disclosed for controlling the displacement of bearings in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by controlling displacement of bearings in the wire saw by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

Abstract: Systems and are disclosed for controlling the temperature of bearings in a wire saw machine. The systems described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by controlling the temperature of bearings in the wire saw by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

Abstract: A system and method for slicing an ingot into wafers using the wire saw process. A slurry collection system collects and supplies slurry to a slurry handling system for controlling temperatures and/or flow rates of the slurry thereby providing slurry output at a controlled temperature and/or a controlled flow rate to slicing system for cutting the ingot, which may be preheated.

Abstract: A system and method for slicing an ingot into wafers using the wire saw process. A slurry collection system collects and supplies slurry to a slurry handling system for controlling temperatures and/or flow rates of the slurry thereby providing slurry output at a controlled temperature and/or a controlled flow rate to slicing system for cutting the ingot, which may be preheated.

Abstract: A method of separating, recovering and reusing components of an exhausted slurry used in slicing silicon wafers from a silicon ingot. In the method, the solid particles and lubricating fluid of the exhausted slurry are separated without decreasing the viscosity of the exhausted slurry. The separated lubricating fluid may be collected and reused in the preparation of a fresh slurry. Additionally, the silicon particulate and metal slicing wire particulate are dissolved and separated from the abrasive grains. The abrasive grains are separated into spent abrasive grains and unspent abrasive grains. The separated unspent abrasive grains are suitable for reuse in the preparation of a fresh slurry.

Abstract: A wire saw (10) for simultaneously slicing multiple, generally cylindrical monocrystalline ingots (14) into wafers. The wire saw includes a cutting head (16), an ingot support (12), and multiple generally parallel lengths of cutting wire (18) defining a cutting web (30). A slurry delivery system includes nozzles (34, 36, and 38) positioned for dispensing slurry along the wire web generally at lateral sides of each ingot. A process for simultaneously slicing at least two generally cylindrical semiconductor ingots into wafers includes mounting at least two ingots to a common ingot support, moving the ingot support relative to the cutting web so that the two ingots simultaneously press against the cutting web at cutting regions, and dispensing a liquid slurry to at least three locations on the wire web including two outermost sides of the cutting regions and a location between each pair of ingots.

Abstract: A method of separating, recovering and reusing components of an exhausted slurry used in slicing silicon wafers from a silicon ingot. In the method, the solid particles and lubricating fluid of the exhausted slurry are separated without decreasing the viscosity of the exhausted slurry. The separated lubricating fluid may be collected and reused in the preparation of a fresh slurry. Additionally, the silicon particulate and metal slicing wire particulate are dissolved and separated from the abrasive grains. The abrasive grains are separated into spent abrasive grains and unspent abrasive grains. The separated unspent abrasive grains are suitable for reuse in the preparation of a fresh slurry.

Abstract: A method of separating, recovering and reusing components of an exhausted slurry used in slicing silicon wafers from a silicon ingot. In the method, the viscosity of the exhausted slurry is reduced and the lubricating fluid component of the slurry is separated from solids and collected, the collected lubricating fluid component being suitable for reuse in the preparation of a fresh slurry without any additional separation steps being necessary. Additionally, the separated solids may be collected and further separated into an unspent abrasive grain component, which is suitable for reused in the preparation of a fresh slurry, and a waste product containing silicon particulate and spent abrasive grains.