Abstract: A high power amplifier (10) includes intelligent independent fault tolerant amplifying modules (11). Each of the modules (11) includes a power amplifier (17) having a plurality of silicon carbide transistor circuits (27-30) coupled in parallel and driven by a silicon carbide transistor circuit (26). The module (11) also includes a dedicated hybrid controller (18) that monitors the operational conditions of the power amplifier (17) and optimizes these operational conditions in order to provide fault isolation and to avoid unwanted failure of the module (11) as a whole.

Abstract: A preamplifier system (10) is provided which amplifies and conditions an input electromagnetic signal for insertion into a high power amplifier. The preamplifier system (10) includes a plurality of cascaded amplifying stages (100a-100d) for incrementally amplifying the input electromagnetic signal, as well as bias control circuitry coupled to the amplifying stages (100a-100d) to electrically bias at least one of those stages into a Class A operational mode and an adjustable phase shift unit (300) coupled to at least one of the amplifying stages (100a-100d) for reversibly shifting the phase of the input electromagnetic signal in accordance with the given high power amplifier's configuration. Each amplifying stage (100a-100d) includes at least one transistor assembly device (110a-110d) having integrally formed therein a plurality of silicon carbide cells coupled one to the other.