Abstract: A lithographic resin for use with deep ultraviolet radiation comprises a weakly acidic resin and an alpha phosphoryl substituted diazo carbonyl compound as a sensitizer.

Abstract: A negative tone resist image is achieved by (1) coating a substrate with a film of a polymer containing a masked, reactive functionality; (2) imagewise exposing the film to radiation in a fashion such that the masked functionality is liberated; (3) contacting the film with an organometallic reagent; (4) developing the relief image by the oxygen plasma etching.

Abstract: Negative relief images are generated by a process comprising the use of cationic polymerization and plasma etching.

Abstract: A lithographic resist for use with deep ultra-violet radiation comprising an acidic resin and a diazohomotetramic acid sensitizer.

Abstract: Resists sensitive to UV, electron beam and X-ray radiation with positive or negative tone upon proper choice of a developer are formulated from a polymer having recurrent pendant groups such as tert-butyl ester or tert-butyl carbonates that undergo efficient acidolysis with concomitant changes in polarity (solubility) together with a photoinitiator which generates acid upon radiolysis. A sensitizer component that alters wavelength sensitivity may also be added.

Abstract: A process for making an image oxygen-reactive ion etch barrier using a polysilane that is resistant to resistive ion etching and is also a positive acting resist.

Abstract: An optical lithography method and apparatus in which a pulsed excimer laser produces at least one fundamental output which is directed to expose a photosensitive medium. The output is highly non-gaussian and has sufficient power so that full exposures can be accomplished within a few seconds. An alternate light source is provided by directing the excimer laser output to a Raman cell having a suitable Raman medium contained therein. At least one secondary wavelength is produced by stimulated Raman scattering and the output of the Raman cell is directed to expose a photosensitive medium. A mixture of more than one excimer gas can also be provided in the excimer laser to produce one fundamental output for each excimer gas present in the mixture. These outputs can be directed to expose a photosensitive medium directly.

Abstract: Positive resists are formed from a soluble phenolic resin and a sensitizer which is a diester of a 1-oxo-2-diazonaphthalene sulfonic acid and of an unsymmetrical primary or secondary aliphatic diol which is a mixture of geometric and diastereoisomers.

Abstract: A resist sensitive to electron beam (and X-ray) radiation but resistant to reactive ion etching is formulated from a novolac resin and a sensitizer which is a terpolymer of sulfur dioxide, an olefin is hydrocarbon and an unsaturated ether.

Abstract: Lithographic resist compositions are provided which permit an improved lift-off process in which the deposition mask with apertures has the desirable negative slope or overhang. The resist composition comprises a phenolic-aldehyde resin, a photosensitizer and Meldrum's diazo, or Meldrum's acid or suitable analogs thereof as a profile modifying agent. The profile modifying agents useful in the present invention have the formula: ##STR1## wherein R.sub.1 is C.sub.1 to C.sub.20 alkyl or aryl, R.sub.2 is H, C.sub.1 to C.sub.20 alkyl or aryl, or together R.sub.1 and R.sub.2 are cycloalkyl, A is N or H.