Abstract: Embodiments of a microelectronic assembly comprise a first integrated circuit (IC) die having first bond-pads on a first surface; an organic dielectric material in contact with the first surface; second bond-pads on a second surface of the organic dielectric material opposite to the first surface; through-dielectric vias (TDVs) in the dielectric material between the first bond-pads and the second bond-pads, wherein the TDVs are in direct contact with the first bond-pads and the second bond-pads; a second IC die embedded in the organic dielectric material and coupled to the first bond-pads by first interconnects; and a package substrate coupled to the second bond-pads by second interconnects.

Abstract: An electronic device comprises a substrate including an organic material; a glass bridge die included in the substrate, the glass bridge die including electrically conductive interconnect; and a first integrated circuit (IC) die and at least a second IC die arranged on a surface of the substrate and including bonding pads connected to the interconnect of the glass bridge die.

Abstract: Various embodiments disclosed relate to a semiconductor assembly having a ceramic or glass interposer for connecting dies within a semiconductor package. The present disclosure includes a ceramic or glass interposer having a carrier layer of substantially glass or ceramic material and a connecting layer having at least one dielectric layer and electrical routing therein.

Abstract: An electronic device comprises a first redistribution layer (RDL) including multiple sublayers of conductive traces formed in an organic material; a stiffening layer including one of a ceramic or glass, the stiffening layer including a first surface contacting a first surface of the first RDL and including a through layer via (TLV); and multiple integrated circuit (ICs) arranged on a second surface of the first RDL and including bonding pads, wherein the conductive traces of the first RDL provide electrical continuity between at least one bonding pad of the ICs and at least one TLV of the stiffening layer.

Abstract: An electronic system has a printed circuit board and a substrate. The substrate has two sides, a top and bottom. At least one memory unit is connected to the bottom side of the substrate and at least one processor is connected to the top side of the substrate. The memory is connected to the processor with interconnects that pass through the substrate.

Abstract: A semiconductor package comprises a package substrate comprised of at least a first layer of dielectric material including a portion of diamond dust material. The diamond dust material is comprised of diamond dust particles. The semiconductor package includes at least one electrical connection coupled through layers of the package substrate.

Abstract: Disclosed herein are microelectronic assemblies, as well as related apparatuses and methods. In some embodiments, a microelectronic assembly may include a substrate; and a microelectronic subassembly electrically coupled to the substrate by interconnects, the microelectronic subassembly including an interposer having a surface; a first die electrically coupled to the surface of the interposer; a second die electrically coupled to the surface of the interposer; and a stiffener ring coupled to the surface of the interposer along the perimeter of the interposer.

Abstract: Disclosed herein are microelectronic assemblies, as well as related apparatuses and methods. In some embodiments, a microelectronic assembly may include a substrate, including a core and a stiffener in the core, wherein the stiffener is along a perimeter of the core; and a die electrically coupled to the substrate.

Abstract: Disclosed herein are microelectronic assemblies, as well as related apparatuses and methods. In some embodiments, a microelectronic assembly may include a substrate having a first surface and an opposing second surface; a die electrically coupled to the second surface of the substrate; and a stiffener attached to the first surface of the substrate configured to mitigate warpage of the die.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate including a first conductive pathway electrically coupled to a power source; a first microelectronic component, embedded in an insulating material on the surface of the package substrate, including a through-substrate via (TSV) electrically coupled to the first conductive pathway; a second microelectronic component embedded in the insulating material; and a redistribution layer on the insulating material including a second conductive pathway electrically coupling the TSV, the second microelectronic component, and the first microelectronic component.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate including a first conductive pathway electrically coupled to a power source; a first microelectronic component embedded in an insulating material on the surface of the package substrate and including a TSV electrically coupled to the first conductive pathway; a redistribution layer (RDL) on the insulating material including a second conductive pathway electrically coupled to the TSV; and a second microelectronic component on the RDL and electrically coupled to the second conductive pathway, wherein the second conductive pathway electrically couples the TSV, the second microelectronic component, and the first microelectronic component.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate including a first conductive pathway electrically coupled to a power source; a mold material on the package substrate including a first microelectronic component embedded in the mold material, a second microelectronic component embedded in the mold material, and a TMV, between the first and second microelectronic components, the TMV electrically coupled to the first conductive pathway; a redistribution layer (RDL) on the mold material including a second conductive pathway electrically coupled to the TMV; and a third microelectronic component on the RDL and electrically coupled to the second conductive pathway, wherein the second conductive pathway electrically couples the TMV, the first microelectronic component, and the third microelectronic component.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate, having a surface, including a first conductive pathway electrically coupled to a power source; an insulating material on the surface of the package substrate; a first microelectronic component, having a first surface facing the package substrate and an opposing second surface, embedded in the insulating material; a second microelectronic component, having a first surface facing the package substrate and an opposing second surface, embedded in the insulating material; a redistribution layer on the insulating material including a second conductive pathway electrically coupled to the second surface of the second microelectronic component and the second surface of the first microelectronic component; and a wire bond electrically coupling the first and the second conductive pathways.

Abstract: In one embodiment, the invention provides a method comprising fabricating a die bump on a die, the die bump being shaped and dimensioned to at least reduce the flow of solder material used, to attach the die bump to a package substrate, towards an under bump metallurgy (UBM) layer located below the die bump. Advantageously, the method may comprise performing a substrate reflow operation to attach the package substrate to the die bump, without performing a separate wafer reflow operation to reflow the die bump.

Abstract: In one embodiment, the invention provides a method comprising fabricating a die bump on a die, the die bump being shaped and dimensioned to at least reduce the flow of solder material used, to attach the die bump to a package substrate, towards an under bump metallurgy (UBM) layer located below the die bump. Advantageously, the method may comprise performing a substrate reflow operation to attach the package substrate to the die bump, without performing a separate wafer reflow operation to reflow the die bump.

Abstract: In one embodiment, the invention provides a method comprising fabricating a die bump on a die, the die bump being shaped and dimensioned to at least reduce the flow of solder material used, to attach the die bump to a package substrate, towards an under bump metallurgy (UBM) layer located below the die bump. Advantageously, the method may comprise performing a substrate reflow operation to attach the package substrate to the die bump, without performing a separate wafer reflow operation to reflow the die bump.

Abstract: Mechanical stresses are reduced between an electronic component having relatively low fracture toughness and a substrate having relatively greater fracture toughness. In an embodiment, the component may be a die having mounting contacts formed of a low yield strength material, such as solder. A package substrate has columnar lands formed of a relatively higher yield strength material, such as copper, having a relatively higher melting point than the component contacts and having a relatively high current-carrying capacity. The component contacts may be hemispherical in shape. The lands may be substantially cylinders, truncated cones or pyramids, inverted truncated cones or pyramids, or other columnar shapes. Methods of fabrication, as well as application of the package to an electronic assembly and to an electronic system, are also described.

Abstract: In one embodiment, the invention provides a method comprising fabricating a die bump on a die, the die bump being shaped and dimensioned to at least reduce the flow of solder material used, to attach the die bump to a package substrate, towards an under bump metallurgy (UBM) layer located below the die bump. Advantageously, the method may comprise performing a substrate reflow operation to attach the package substrate to the die bump, without performing a separate wafer reflow operation to reflow the die bump.

Abstract: Mechanical stresses are reduced between an electronic component having relatively low fracture toughness and a substrate having relatively greater fracture toughness. In an embodiment, the component may be a die having mounting contacts formed of a low yield strength material, such as solder. A package substrate has columnar lands formed of a relatively higher yield strength material, such as copper, having a relatively higher melting point than the component contacts and having a relatively high current-carrying capacity. The component contacts may be hemispherical in shape. The lands may be substantially cylinders, truncated cones or pyramids, inverted truncated cones or pyramids, or other columnar shapes. Methods of fabrication, as well as application of the package to an electronic assembly and to an electronic system, are also described.

Abstract: Mechanical stresses are reduced between an electronic component having relatively low fracture toughness and a substrate having relatively greater fracture toughness. In an embodiment, the component may be a die having mounting contacts formed of a low yield strength material, such as solder. A package substrate has columnar lands formed of a relatively higher yield strength material, such as copper, having a relatively higher melting point than the component contacts and having a relatively high current-carrying capacity. The component contacts may be hemispherical in shape. The lands may be substantially cylinders, truncated cones or pyramids, inverted truncated cones or pyramids, or other columnar shapes. Methods of fabrication, as well as application of the package to an electronic assembly and to an electronic system, are also described.